PHASE CONTROL THYRISTOR H500TBXX
TJ (0C)
Symbol
Characteristics
Conditions
Value
Unit
BLOCKING PARAMETERS VRRM VDRM IRRM IDRM Repetitive Repetitive voltage Repetitive Repetitive peak reverse voltage peak off-stage peak reverse current peak off-state current V = VRRM V = VRRM 125 125 125 125 200-1600 200-1600 80 80 V V mA mA
CONDUCTING PARAMETERS IF(AV) IRMS ITSM I2 t VT V0 R0 Average on-state current RMS on-state current Surge on-state current I2 t Peak on-state voltage drop Threshold voltage On-state slope resistance Sine wave, 10mS without reverse voltage On-state current =1.57kA 125 125 125 125 180 sine, 50H Z, TC = 750C 500 785 12 720 1.60 0.90 0.35 A A kA kA2S V V mΩ
TRIGGERING PARAMETERS IGT VGT IL PG –PEAK di/dt VFGM IFGM Gate trigger current Gate trigger voltage Latching Current Maximum Peak Gate Power Repetitive rate of rise of current Maximum forward gate voltage Maximum forward gate current VD = 5V VD = 5V Pulse width 100μSec 25 25 25 250 2.00 1000 150 120 12 40 mA V mA W A/μSec V A
THERMAL & MECHANICAL PARAMETERS R TH (J-C) RTH (C-HK) TJ TSTG F W Thermal impedance, 180 conduction, Sine Thermal impedance Maximum Permissible junction temperature Storage temperature range Mounting Torque Weight Junction to case Case to heatsink 0.076 0.015 125 -40 - 125 18 875
0
C/W C/W
0 0
0
C
C NM gms
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PHASE CONTROL THYRISTOR H500TBXX
All dimensions in mm
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PHASE CONTROL THYRISTOR H500TBXX
On State Power Loss
1000 900 800 700
DC
Pt(av) - W
600 500 400 300 200 100 0 0
1200 600
1800
50 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 It (av)
M aximum Permissible Case Temp
140 120 100
Tcase (0C)
80 60 40 20
600
0 0
1200
1800
DC
50 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 It(av) A
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PHASE CONTROL THYRISTOR H500TBXX
Max non repetitive Surge Current
14000 12000 10000
Itsm (A)
8000 6000 4000 2000 0 0.01 0.1
Tim e in Sec
1
10
Transient Thermal Impedance Junction to Case
0.08 0.07 0.06 0.05
Rth(j-c)
0.04 0.03 0.02 0.01 0 0.001
0.01
0.1 Time in Sec
1
10
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PHASE CONTROL THYRISTOR H500TBXX
On State Characteristics
2400 2200 2000 1800 1600 1400 1200 1000 800 600 400 200 0 0 0.5 1 1.5 2 2.5 3
It(av) A
Vt (V)
Gate Trigger Characteristics
100
10
VG(V) - V
1
250C
120W (0.1mS)
0.1 0.01
0.1
1
10
100
I G (av) - A
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PHASE CONTROL THYRISTOR H500TBXX
Ordering Information: H Hirect make Thyristor 500 IF(AV) = 500A TB TB – with a Pigtail XX VRRM = XX * 100 e.g.12 * 100 =1200V
Hind Rectifiers Ltd reserves the right to change the specifications without
notice. This datasheet specifies technical information for semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability.
Lake Road Bhandup (West) Mumbai – 400 078 Tel: - +91 22 2596 8027/28/29/31 Fax: - +91 22 2596 4114 E-mail: - marketing@hirect.com Website: - www.hirect.com
Hind Rectifiers Ltd
June-2008
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