2SA1084

2SA1083, 2SA1084, 2SA1085 Silicon PNP Epitaxial Application • Low frequency low noise amplifier • Complementary pair with 2SC2545, 2SC2546 and 2SC2547 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SA1083, 2SA1084, 2SA1085 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC IE PC Tj Tstg 2SA1083 –60 –60 –5 –100 100 400 150 –55 to +150 2SA1084 –90 –90 –5 –100 100 400 150 –55 to +150 2SA1085 –120 –120 –5 –100 100 400 150 –55 to +150 Unit V V V mA mA mW °C °C 2 2SA1083, 2SA1084, 2SA1085 Electrical Characteristics (Ta = 25°C) 2SA1083 Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current Symbol Min V(BR)CBO –60 V(BR)CEO –60 V(BR)EBO –5 ICBO IEBO — — 250 — — — — — Typ — — — — — — — Max — — — –0.1 –0.1 800 –0.2 2SA1084 Min –90 –90 –5 — — 250 — — — — — Typ Max — — — — — — — — — — –0.1 –0.1 800 –0.2 2SA1085 Min Typ Max — — — –0.1 –0.1 800 –0.2 V V Unit Test conditions V V V µA µA IC = –10 µA, IE = 0 IC = –1 mA, RBE = ∞ IE = –10 µA, IC = 0 VCB = –50 V, I E = 0 VEB = –2 V, IC = 0 VCE = –12 V, IC = –2 mA IC = –10 mA, IB = –1 mA VCE = –12 V, IC = –2 mA –120 — –120 — –5 — — 250 — — — — — — — — — — DC current transfer ratio hFE*1 Collector to emitter saturation voltage Base to emitter voltage VCE(sat) VBE –0.6 — 90 3.5 0.5 — — — –0.6 — 90 3.5 0.5 — — — –0.6 — 90 3.5 0.5 — — — Gain bandwidth product fT Collector output capacitance Noise voltage reffered to input Cob en MHz VCE = –12 V, IC = –2 mA pF nV/ √Hz VCB = –10 V, I E = 0, f = 1 MHz VCE = –6V, IC = –10 mA, f = 1 kHz, Rg = 0, ∆f = 1Hz Note: D 1. The 2SA1083, 2SA1084 and 2SA1085 are grouped by h FE as follows. E 400 to 800 250 to 500 3 2SA1083, 2SA1084, 2SA1085 Maximum Collector Dissipation Curve Collector power dissipation PC (mW) 600 Collector current IC (mA) –50 –1 Typical Output Characteristics (1) 40 –1 –40 20 0 –10 –80 –60 400 –30 P –40 C =0 .4 W –20 200 –20 µA –10 IB = 0 0 50 100 150 Ambient Temperature Ta (°C) 0 –4 –8 –12 –16 –20 Collector to Emitter Voltage VCE (V) Typical Output Characteristics (2) –20 Typicaol Transfer Characteristics –10 VCE = –12 V Collector Current IC (mA) –5 –4 –35 0 –30 –25 –20 –15 Collector current IC (mA) –16 –12 –2 –1.0 –0.5 –8 –10 –5 µA IB = 0 –4 –0.2 –0.1 0 –0.2 –0.4 –0.6 –0.8 Base to Emitter Voltage VBE (V) –1.0 0 –4 –8 –12 –16 –20 Collector to Emitter Voltage VCE (V) 4 2SA1083, 2SA1084, 2SA1085 DC Current Transfer Ratio vs. Collector Current Collector to emitter saturation voltage VCE(sat) (V) 5,000 DC current teransfer ratio hFE VCE = –12 V Pulse –1.0 –0.5 Collector to Emitter Saturation Voltage vs. Collector Current IC = 10 IB 2,000 1,000 500 200 100 50 –0.1 –0.2 –0.1 –0.05 –0.02 –0.01 –1 –0.3 –1.0 –3 –10 –30 Collector Current IC (mA) –100 –2 –5 –10 –20 –50 –100 Collector Current IC (mA) Base to Emitter Saturation Voltage vs. Collector Current –10 Base to emitter saturation voltage VBE(sat) (V) –5 2,000 Gain bandwidth product fT (MHz) IC = 10 IB Gain Bandwidth Product vs. Collector Current VCE = –12 V 1,000 500 –2 –1.0 –0.5 200 100 50 –0.2 –0.1 –1 –2 –5 –10 –20 –50 –100 Collector Current IC (mA) 20 –1 –2 –5 –10 –20 –50 –100 Collector Current IC (mA) 5 2SA1083, 2SA1084, 2SA1085 Collector Output Capacitance vs. Collector to Base Voltage Collector output capacitance Cob (pF) 100 50 Singnal source resistance Rg (kΩ) IE = 0 f = 1 MHz 100 30 10 3 1.0 0.3 0.1 0.03 10 0.01 –0.01 –0.03 –0.1 –0.3 –1.0 –3 –10 –30 –100 Collector Current IC (mA) NF = 0.5 dB 1 2 4 6 Contours of Constant Noise Figure (1) VCE = –6 V f = 1 kHz 20 10 5 2 1 –0.5 –1.0 –2 –5 –10 –20 –50 Collector to Base Voltage VCB (V) Contours of Constant Noise Figure (2) 100 Singnal source resistance Rg (kΩ) 30 10 3 1.0 0.3 0.1 0.03 0.01 –0.01 –0.03 –0.1 –0.3 –1.0 –3 –10 –30 –100 Collector Current IC (mA) NF = 0.5 dB 1246 10 Singnal source resistance Rg (kΩ) VCE = –6 V f = 120 Hz 100 30 10 3 1.0 0.3 0.1 0.03 Contours of Constant Noise Figure (3) VCE = –6 V f = 10 Hz NF = 0.5 dB 12 4 6 10 0.01 –0.01 –0.03 –0.1 –0.3 –1.0 –3 –10 –30 –100 Collector Current IC (mA) 6 Unit: mm 4.8 ± 0.3 3.8 ± 0.3 2.3 Max 0.5 ± 0.1 0.7 0.60 Max 12.7 Min 5.0 ± 0.2 0.5 1.27 2.54 Hitachi Code JEDEC EIAJ Weight (reference value) TO-92 (1) Conforms Conforms 0.25 g Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: (408) 433-1990 Fax: (408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher Stra§e 3 D-85622 Feldkirchen, Munich Germany Tel: (89) 9 9180-0 Fax: (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: (1628) 585000 Fax: (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: (2) 2718-3666 Fax: (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: (2) 735 9218 Fax: (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.