2SB1530

2SB1530 Silicon PNP Triple Diffused Application Low frequency power amplifier color TV vertical deflection output complementary pair with 2SD2337 Outline TO-220FM 12 3 1. Base 2. Collector 3. Emitter 2SB1530 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Symbol VCBO VCEO VEBO IC I C(peak) PC PC * Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Tj Tstg 1 Ratings –200 –150 –6 –2 –5 1.5 20 150 –45 to +150 Unit V V V A A W °C °C Electrical Characteristics (Ta = 25°C) Item Symbol Min –150 –6 — 1 Typ — — — — — — — Max — — –1 200 — –3 –1 Unit V V µA Test conditions I C = –50 mA, RBE = ∞ I E = –5 mA, IC = 0 VCB = –120 V, IE = 0 VCE = –4 V, IC = –50 mA VCE = –10 V, IC = –500 mA*2 Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio V(BR)EBO I CBO hFE1* hFE2 Collector to emitter saturation voltage Base to emitter voltage VCE(sat) VBE 60 60 — — V V I C = –500 mA, IB = –50 mA I CE = –4 A, IC = –50 mA Notes: 1. The 2SB1530 is grouped by hFE1 as follows. B 60 to 120 C 100 to 200 2. Pulse test. 2 2SB1530 Maximum Collector Dissipation Curve 30 Collector power dissipation PC (W) –10 –5 Collector current IC (A) 20 TC –2 –1.0 –0.5 –0.2 –0.1 150 (–150 V, –65 mA) –0.05 –2 –5 –10 –20 –50 –100 –200 Collector to emitter voltage VCE (V) IC(max)(Continuous) Area of Safe Operation DC O n tio ra pe (–15 V, –2 A) 10 (–60 V, –0.4 A) (T C = °C 25 ) 1.5 W 0 Ta 50 100 Ambient temperature Ta (°C) Case temperature TC (°C) Typical Output Characteristics –1.0 TC = 25°C –8 –7 –6 –5 –0.6 –4 –3 –0.4 –2 –0.2 –1 mA IB = 0 0 –4 –12 –16 –8 –20 Collector to emitter voltage VCE (V) –1000 –500 Collector Current IC (mA) –200 –100 –50 –20 –10 –5 –0.4 Typical Output Characteristics VCE = –4 V TC = –75°C 25 –25 Collector current IC (A) –0.8 –0.5 –0.6 –0.7 –0.8 –0.9 Base to emitter voltage VBE (V) –1.0 3 2SB1530 Collector to emitter saturation voltage VCE(sat) (V) DC Current Transfer Ratio vs. Collector Current 500 VCE = –4 V DC current transfer ratio hFE 200 100 50 TC = 75°C 25 –25 Collector to Emitter Saturation Voltage vs.Collector Current –10 IC = 10 IB –5 –2 –1.0 –0.5 –25 –0.2 –0.1 –10 TC = 75°C 25 20 10 5 –10 –20 –50 –100 –200 –500 –1000 Collector current IC (mA) –20 –50 –100 –200 –500 –1000 Collector current IC (mA) 4 10.0 ± 0.3 7.0 ± 0.3 φ 3.2 ± 0.2 2.8 ± 0.2 2.5 ± 0.2 Unit: mm 0.6 5.0 ± 0.3 2.0 ± 0.3 1.2 ± 0.2 1.4 ± 0.2 12.0 ± 0.3 4.45 ± 0.3 2.5 14.0 ± 1.0 0.5 ± 0.1 Hitachi Code JEDEC EIAJ Weight (reference value) TO-220FM — Conforms 1.8 g 0.7 ± 0.1 2.54 ± 0.5 2.54 ± 0.5 17.0 ± 0.3 Cautions 1. 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Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: (2) 2718-3666 Fax: (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: (2) 735 9218 Fax: (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.