2SB858

2SB857, 2SB858 Silicon PNP Triple Diffused Application Low frequency power amplifier complementary pair with 2SD1133 and 2SD1134 Outline TO-220AB 1 23 1. Base 2. Collector (Flange) 3. Emitter Absolute Maximum Ratings (Ta = 25°C) Ratings Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at T C = 25°C Symbol VCBO VCEO VEBO IC I C(peak) PC * Tj Tstg 1 2SB857 –70 –50 –5 –4 –8 40 150 –45 to +150 2SB858 –70 –60 –5 –4 –8 40 150 –45 to +150 Unit V V V A A W °C °C 2SB857, 2SB858 Electrical Characteristics (Ta = 25°C) 2SB857 Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO 1 2SB858 Max — — — –1 320 — –1 –1 — Min –70 –60 –5 — 60 35 — — — Typ — — — — — — — — 15 Max — — — –1 320 — –1 –1 — V V MHz Unit V V V µA Test conditions I C = –10 µA, IE = 0 I C = –50 mA, RBE = ∞ I E = –10 µA, IC = 0 VCB = –50 V, IE = 0 VCE = –4 V I C = –1 A*2 I C = –0.1 A*2 Min –70 –50 –5 — 60 35 — — — Typ — — — — — — — — 15 DC current transfer ratio hFE1* hFE2 Collector to emitter saturation voltage VCE(sat) I C = –2 A, IB = –0.2 A*2 VCE = –4 V, IC = –1 A*2 VCE = –4 V, I C = –0.5 A*2 Base to emitter voltage VBE Gain bandwidth product f T Notes: 1. The 2SB857 and 2SB858 are grouped by h FE1 as follows. 2. Pulse test B 60 to 120 C 100 to 200 D 160 to 320 Maximum Collector Dissipation Curve 60 Collector power dissipation Pc (W) –5 Area of Safe Operation IC max (Continuous) Collector Current IC (A) –2 –1.0 –0.5 (–50 V, –0.24 A) –0.2 –0.1 –0.05 –1 2SB857 2SB858 –2 –5 –10 –20 –50 –100 Collector to emitter Voltage VCE (V) (–10 V, –4 A) D C O pe ra tio (–20 V, –2 A) n (–6 0V 40 TC = 25°C , –0 .15 20 A) 0 50 100 Case Temperature TC (°C) 150 2 2SB857, 2SB858 Typical Output Characteristics –5 0W =4 Pc Typical Transfer Characteristics –5 VCE = –4 V –2 Collector current IC (A) –1.0 –0.5 –0.2 –0.1 –0.05 –0.02 –0.01 0 –0.2 –0.4 –0.6 –0.8 –1.0 –1.2 –1.4 Base to emitter voltage VBE (V) TC = 25°C Collector Current IC (A) –4 –70 –60 –50 –3 –40 –30 –2 –20 –10 mA IB = 0 –2 –4 –6 –8 –10 Collector to emitter Voltage VCE (V) 0 DC Current Transfer Ratio vs. Collector Current Collector to emitter saturation voltage VCE (sat) (V) 1,000 DC current transfer ratio hFE 500 200 100 50 20 10 5 –0.01–0.02 –0.05–0.1 –0.2 –0.5 –1.0 –2 Collector current IC (A) –4 TC = 75°C 25 –25 VCE = –4 V –1.4 –1.2 –1.0 –0.8 –0.6 –0.4 –0.2 Collector to Emitter Saturation Voltage vs. Collector Current IC = 10 IB TC = 75°C 25 –25 0 –0.01–0.02 –0.05 –0.1 –0.2 –0.5 –1.0 –2 Collector current IC (A) 25 –25 –1 TC = 75 °C –5 3 Unit: mm 11.5 MAX 2.79 ± 0.2 10.16 ± 0.2 9.5 8.0 φ 3.6 -0.08 +0.1 4.44 ± 0.2 1.26 ± 0.15 6.4 +0.2 –0.1 18.5 ± 0.5 15.0 ± 0.3 1.27 2.7 MAX 14.0 ± 0.5 1.5 MAX 7.8 ± 0.5 0.76 ± 0.1 2.54 ± 0.5 2.54 ± 0.5 0.5 ± 0.1 Hitachi Code JEDEC EIAJ Weight (reference value) TO-220AB Conforms Conforms 1.8 g Cautions 1. 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