2SC2732

2SC2732 Silicon NPN Epitaxial Application UHF frequency converter Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SC2732 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 30 25 4 20 150 150 –55 to +150 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 30 25 4 — — 30 700 — — Typ — — — — — 60 1000 0.5 7.0 Max — — — 0.5 5 — — 0.8 — MHz pF dB Unit V V V µA V Test conditions I C = 10 µA, IE = 0 I C = 1 mA, RBE = ∞ I E = 10 µA, IC = 0 VCB = 10 V, IC = 0 I C = 10 mA, IB = 1 mA VCE = 10 V, IC = 3 mA VCE = 10 V, IC = 5 mA VCB = 10 V, IE = 0, f = 1 MHz VCC = 12 V, IC = 1 mA, f = 900 MHz, f OSC = 930 MHz (0dBm) , f out = 30 MHz VCC = 12 V, IC = 1 mA, f = 900 MHz, f OSC = 930 MHz (0dBm) , f out = 30 MHz Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current Collector to emitter saturation voltage DC current transfer ratio Gain bandwidth product Collector output capacitance Conversion gain V(BR)EBO I CBO VCE(sat) hFE fT Cob CG Noise figure NF — 10.0 — dB Note: Marking is “EC”. 2 2SC2732 DC Current Transfer Ratio vs. Collector Current Maximum Collector Dissipation Curve Collector Power Dissipation Pc (mW) 150 DC Current Transfer Ratio hFE 100 VCE = 10 V 80 100 60 40 50 20 0 0 50 100 150 Ambient Temperature Ta (°C) 1 2 5 10 20 Collector Current IC (mA) 50 Gain Bandwidth Product vs. Collector Current Gain Bandwidth Product fT (MHz) VCE = 10 V Collector Output Capacitance Cob (pF) 2,000 1.0 Collector Output Capacitance vs. Collector to Base Voltage f = 1 MHz IE = 0 1,600 0.8 1,200 0.6 800 0.4 400 0.2 0 1 2 5 10 20 Collector Current IC (mA) 50 0 1 2 5 10 20 50 Collector to Base Voltage VCB (V) 3 2SC2732 Reverse Transfer Capacitance vs. Collector to Emitter Voltage Reverse Transfer Capacitance Crb (pF) 0.5 Conversion Gain CG (dB) f = 1 MHz IC = 0 Base Common 10 VCC = 12 V f = 900 MHz fosc = 930 MHz (0dBm) fout = 30 MHz Conversion Gain vs. Collector Current 0.4 8 0.3 6 0.2 4 0.1 2 0 1 2 5 10 20 50 Collector to Emitter Voltage VCE (V) 0 1 2 3 4 Collector Current IC (mA) 5 Noise Figure vs. Collector Current 20 Noise Figure NF (dB) 16 12 VCC = 12 V f = 900 MHz fosc = 930 MHz (0dBm) fout = 30 MHz 8 4 0 0.4 0.8 1.2 1.6 Collector Current IC (mA) 2.0 4 2SC2732 Conversion Gain, Noise Figure Test Curcuit 1k C2 fosc = 930 MHz (0 dBm) L5 L4 L3 L1 ∗ D.U.T. 8p L2 C1 f = 900 MHz 0.047 µ 100 12 p 200 p L6 C3 200 µ 80 p fout = 30 MHz RL = 50 Ω ∗······Disk Capacitor Unit R : Ω C:F L:H 23 L1 : φ1 mm Enameled Copper wire 11 90° 120° 4 13 22 L2 : φ1 mm Enameled Copper wire 7 90° 20 90° 13 90° 90° 3 7 L3 : φ1 mm Enameled Copper wire 130° 11 90° Unit : mm L4 : φ1 mm Enameled Copper wire L5 L6 C1 C2, C3 : Bobbin φ0.5 mm inside dia, φ0.2 mm Enameled Copper wire 20 Turns : φ5 mm Enameled Copper wire 1 Turns inside dia φ6 mm : 20 pF max. Air Trimmer Condenser : 1000 pF Air Core Capacitor 7 5 Unit: mm 0.65 0.10 3 – 0.4 + 0.05 – 0.16 – 0.06 + 0.10 1.5 ± 0.15 + 0.2 – 0.6 0 – 0.1 0.95 0.95 1.9 ± 0.2 2.95 ± 0.2 0.3 + 0.2 1.1 – 0.1 0.65 2.8 Hitachi Code JEDEC EIAJ Weight (reference value) MPAK — Conforms 0.011 g Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. 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Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: (2) 2718-3666 Fax: (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: (2) 735 9218 Fax: (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.