2SC2736

2SC2736 Silicon NPN Epitaxial Application • UHF/VHF frequency converter • Local oscillator Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SC2736 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 30 20 3 50 150 150 –55 to +150 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 30 20 3 — — 30 — 1400 — Typ — — — — — — — 2200 22.5 Max — — — 500 0.7 200 1.0 — — pF MHz dB Unit V V V nA V Test conditions I C = 10 µA, IE = 0 I C = 1 mA, RBE = ∞ I E = 10 µA, IC = 0 VCB = 15 V, IC = 0 I C = 10 mA, IB = 5 mA VCE = 10 V, IC = 5 mA VCB = 10 V, IE = 0, f = 1 MHz VCE = 10 V, IC = 5 mA VCC = 12 V, IC = 2 mA, f = 200 MHz, f OSC = 230 MHz (0dBm) VCC = 12 V, IC = 2 mA, f = 900 MHz, f OSC = 930 MHz (0dBm), f Out = 30 MHz VCC = 12 V, IC = 2 mA, f = 200 MHz, f OSC = 230 MHz (0dBm) VCC = 12 V, IC = 7 mA, f OSC = 300 MHz VCC = 12 V, IC = 7 mA, f OSC = 930 MHz Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current Collector to emitter saturation voltage DC current transfer ratio Collector output capacitance Gain bandwidth product Conversion gain V(BR)EBO I CBO VCE(sat) hFE Cob fT CG1 CG2 — 10 — dB Noise figure NF — 4.0 — dB Oscillating output voltage VOSC1 VOSC2 — — 300 200 — — mV mV Note: Marking is “TC”. 2 2SC2736 Maximum Collector Dissipation Curve Collector Power Dissipation PC (mW) 150 DC Current Transfer Ratio hFE DC Current Transfer Ratio vs. Collector Current 100 VCE = 10 V 80 100 60 40 50 20 0 0 100 150 50 Ambient Temperature Ta (°C) 1 10 20 2 5 Collector Current IC (mA) 50 Gain Bandwidth Product vs. Collector Current Collector Output Capacitance Cob (pF) 5,000 Gain Bandwidth Product fT (MHz) VCE = 10 V 1.0 Collector Output Capacitance vs. Collector to Base Voltage 4,000 0.8 f = 1 MHz IE = 0 3,000 0.6 2,000 0.4 1,000 0.2 0 1 10 20 2 5 Collector Current IC (mA) 50 0 1 10 20 50 2 5 Collector to Base Voltage VCB (V) 3 2SC2736 Reverse Transfer Capacitance vs. Collector to Base Voltage Reverse Transfer Capacitance Cre (pF) 1.0 f = 1 MHz Emitter Common Base Time Constant rbb' CC (ps) 20 VCB = 10 V f = 31.8 MHz Base Time Constant vs. Collector Current 0.8 16 0.6 12 0.4 8 0.2 4 0 1 10 20 50 2 5 Collector to Base Voltage VCB (V) 0 4 8 12 16 Collector Current IC (mA) 20 Conversion Gain, Noise Figure vs. Collector Current 25 Conversion Gain CG (dB) CG Noise Figure NF (dB) 20 16 20 Conversion Gain CG (dB) 25 Conversion Gain, Noise Figure vs. Oscillating Injection Voltage 20 CG 15 12 15 10 10 VCC = 12 V IC = 2 mA f = 200 MHz fosc = 230 MHz fout = 30 MHz NF 10 NF VCC = 12 V f = 200 MHz fosc = 230 MHz (0 dBm) fout = 30 MHz 8 5 4 5 0 6 8 2 4 Collector Current IC (mA) 0 10 0 –8 –4 –20 –16 –12 0 Oscillating Injection Voltage Vosc (dBm) 4 Noise Figure NF (dB) 20 2SC2736 Conversion Gain vs. Collector Current Oscillating Output Voltage Vosc1 (mV) 20 Conversion Gain CG (dB) VCC = 12 V f = 900 MHz fosc = 930 MHz (0dBm) fout = 30 MHz 500 Oscillating Output Voltage vs. Collector Current 16 400 12 300 8 200 VCC = 12 V fosc = 300 MHz 4 100 0 6 8 2 4 Collector Current IC (mA) 10 0 12 16 4 8 Collector Current IC (mA) 20 Oscillating Output Voltage vs. Collector Current Oscillating Output Voltage Vosc2 (mV) 500 VCC = 12 V fosc = 930 MHz Oscillating Output Voltage Vosc (mV) 500 Oscillating Output Voltage vs. Supply Voltage IC = 7 mA 400 fosc = 300 MHz 300 400 300 200 200 fosc = 900 MHz 100 100 0 12 16 4 8 Collector Current IC (mA) 20 0 12 16 4 8 Supply Voltage VCC (V) 20 5 2SC2736 VHF Conversion Gain (CG1) : Noise Figure Test Circuit fosc = 230 MHz (0 dBm) 2,200 p 1.5 p 560 f = 200 MHz L2 56 p Ferrite Bead D.U.T. L4 27 p fout = 30 MHz RL = 50 Ω VCC L1 : φ0.5 mm Enameled Copper Wire 4 Turns inside dia φ5 mm L2 : φ0.5 mm Enameled Copper Wire 4 Turns inside dia φ4 mm L3 : φ0.2 mm Enameled Copper Wire 6 Turns inside dia φ3 mm L1 4.2 p 330 L3 18 p 2,200 p 2,200 p 80 p L4 : Outside dia φ5 mm Bobbin, φ0.2 mm Enameled Copper Wire 16 Turns Using Ferrite bead. VBB Unit C : F R:Ω 6 2SC2736 UHF Conversion Gain (CG2) Test Circuit VBB C2 fosc = 930 MHz (0 dBm) L5 1k C3 200 µ L6 80 p VCC fout = 30 MHz RL = 50 Ω L4 L3 L1 L2 * 8p D.U.T. 12 p 200 p C1 f = 900 MHz 100 0.047 µ *······Disk Capacitor Unit C : F R:Ω L:H L1 : φ1 mm Enameled Copper Wire L2 : φ1 mm Enameled Copper Wire L3 : φ1 mm Enameled Copper Wire L4 : φ1 mm Enameled Copper Wire 23 11 22 90° 120° L5 : Bobbin φ5 mm inside dia, φ0.2 mm Enameled Copper Wire 20 Turns 4 13 90° 20 90° 90° 3 7 L6 : φ0.5 mm Enameled Copper Wire 1 Turn inside dia φ6 mm C1 : 20 pF max Air Trimmer Condenser C2, C3 : 1000 pF Air Core Capacitor 7 13 90° 7 130° 11 90° 7 2SC2736 VHF Oscillating Output Voltage (Vosc1) Test Circuit VBB 2.2 k Vosc Output 1.5 p D.U.T. 7p 4,700 p 1.1 M 5.6 p L1 4,700 p 1SV70 VT 200 12 p 20,000 p 4,700 p 1,000 p 200 µ L1 : φ0.3 mm Enameled Copper Wire 3 Turns inside dia φ3 mm VCC Test Frequency fosc = 300 MHz fosc Monitor Unit C : F R:Ω L:H 8 2SC2736 UHF Oscillating Output Voltage (Vosc2) Test Circuit L3 VCC 470 Ferrite Bead 1.2 p 9p L2 330 2,200 p ISV70 6.8 k 1,000 p L1 1,000 p 120 k D.U.T. VT 1,000 p VBB Vosc Output Unit R : Ω C:F 26 L1 : Polyurethane Coated Copper Wire 10 (Unit : mm) L2 : Polyurethane Coated Copper Wire Dimensions of Cavity 15 L3 : φ0.3 mm Enameled Copper wire, 10 Turns with 470 Ω (1/4W)Resistor. 8 Test Frequency fosc = 930 MHz 10 5 9 Unit: mm 0.65 0.10 3 – 0.4 + 0.05 – 0.16 – 0.06 + 0.10 1.5 ± 0.15 + 0.2 – 0.6 0 – 0.1 0.95 0.95 1.9 ± 0.2 2.95 ± 0.2 0.3 + 0.2 1.1 – 0.1 0.65 2.8 Hitachi Code JEDEC EIAJ Weight (reference value) MPAK — Conforms 0.011 g Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. 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Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. 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Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: (2) 2718-3666 Fax: (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: (2) 735 9218 Fax: (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.