2SC3510

2SC3127, 2SC3128, 2SC3510 Silicon NPN Epitaxial Application UHF/VHF wide band amplifier Outline MPAK 2SC3127 3 1 2 1. Emitter 2. Base 3. Collector 2SC3127, 2SC3128, 2SC3510 TO-92 (2) 2SC3128, 2SC3510 1. Base 2. Emitter 3. Collector 3 2 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Note: Symbol VCBO VCEO VEBO IC PC Tj Tstg 2SC3127 * 1 20 12 3 50 150 150 –55 to +150 2SC3128 20 12 3 50 350 150 –55 to +150 2SC3510 20 12 3 50 600 150 –55 to +150 Unit V V V mA mW °C °C 1. Marking for 2SC3127 is “ID–”. 2 2SC3127, 2SC3128, 2SC3510 Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter cutoff current Collector cutoff current DC current transfer ratio Collector output capacitance Gain bandwidth product Power gain Noise figure Symbol V(BR)CBO V(BR)CEO I EBO I CBO hFE Cob fT PG NF Min 20 12 — — 30 — 3.5 — — Typ — — — — 90 0.9 4.5 10.5 2.2 Max — — 10 0.5 200 1.5 — — — pF GHz dB dB Unit V V µA µA Test conditions I C = 10 µA, IE = 0 I C = 1 mA, RBE = ∞ VEB = 3 V, IC = 0 VCB = 12 V, IE = 0 VCE = 5 V, IC = 20 mA VCB = 5 V, IE = 0, f = 1 MHz VCE = 5 V, IC = 20 mA VCE = 5 V, IC = 20 mA, f = 900 MHz VCE = 5 V, IC = 5 mA, f = 900 MHz Maximum Collector Dissipation Curve Collector Power Dissipation Pc (mW) 600 2SC3510 400 2SC3128 DC Current Transfer Ratio hFE 200 DC Current Transfer Ratio vs. Collector Current VCE = 5 V 160 120 80 200 2SC3127 40 0 0 50 100 150 Ambient Temperature Ta (°C) 200 1 2 5 10 20 50 Collector Current IC (mA) 100 3 2SC3127, 2SC3128, 2SC3510 Gain Bandwidth Product vs. Collector Current Collector Output Capacitance Cob (pF) 5.0 Gain Bandwidth Product fT (GHz) 2.0 Collector Output Capacitance vs. Collector to Base Voltage 4.0 1.6 f = 1 MHz IE = 0 1.2 3.0 2.0 VCE = 5 V f = 500 MHz 0.8 1.0 0.4 0 1 2 5 10 20 Collector Current IC (mA) 50 0 1 2 5 10 20 50 Collector to Base Voltage VCB (V) Reverse Transfer Capacitance vs. Collector to Base Voltage Reverse Transfer Capacitance Cre (pF) 2.0 f = 1 MHz Emitter Common Power Gain PG (dB) Noise Figure NF (dB) 1.6 20 Power Gain and Noise Figure vs. Collector Current 16 PG 12 VCE = 5 V f = 500 MHz 8 NF 1.2 0.8 0.4 4 0 1 2 5 10 20 50 Collector to Base Voltage VCB (V) 0 0 10 20 30 40 Collector Current IC (mA) 50 4 2SC3127, 2SC3128, 2SC3510 Power Gain and Noise Figure vs. Collector Current 12 2nd I.M. Distortion 2nd I.M.D. (dB) 2nd I.M. Distortion vs. Collector Current 70 Power Gain PG (dB) Noise Figure NF (dB) 10 PG VCE = 5 V f = 900 MHz 60 8 50 6 NF 4 40 30 VCC = 12 V f1 = 210 MHz, f2 = 200 MHz Vout = 100 dBµ f2nd = 410 MHz 0 10 20 30 40 Collector Current IC (mA) 50 2 0 10 20 30 40 Collector Current IC (mA) 50 20 2nd I.M. Distortion vs. Collector Current 70 2nd I.M. Distortion 2nd I.M.D. (dB) 3rd I.M. Distortion 3rd I.M.D. (dB) 3rd I.M. Distortion vs. Collector Current 80 f = 190 MHz 60 70 f = 220 MHz 60 50 40 50 30 VCC = 12 V f1 = 600 MHz, f2 = 650 MHz Vout = 100 dBµ f2nd = 1,250 MHz 0 10 20 30 40 Collector Current IC (mA) 50 40 VCC = 12 V f1 = 210 MHz, f2 = 200 MHz Vout = 100 dBµ f3rd = 190 MHz, 220 MHz 0 10 20 30 40 Collector Current IC (mA) 50 20 30 5 2SC3127, 2SC3128, 2SC3510 3rd I.M. Distortion vs. Collector Current 70 3rd I.M. Distortion 3rd I.M.D. (dB) f = 550 MHz 60 f = 700 MHz 50 40 30 VCC = 12 V f1 = 600 MHz, f2 = 650 MHz Vout = 100 dBµ f3rd = 550 MHz, 700 MHz 0 10 20 30 40 Collector Current IC (mA) 50 20 Noise Figure vs. Frequency 10 VCC = 12 V IC = 20 mA Noise Figure NF (dB) 8 Post AMP. NF 6 NF 4 2 0 400 500 600 700 Frequency f (MHz) 800 900 6 2SC3127, 2SC3128, 2SC3510 Power Gain vs. Frequency 10 Power Gain PG (dB) 8 VCC = 12 V, IC = 20 mA Input Power Level –50 dBm 6 4 2 0 250 500 Frequency f (MHz) 750 1,000 Power Gain vs. Frequency 10 Power Gain PG (dB) 8 IC = 30 mA IC = 20 mA 4 VCC = 12 V Input Power Level –50 dBm IC = 10 mA IC = 5 mA 6 2 0 250 500 Frequency f (MHz) 750 1,000 7 2SC3127, 2SC3128, 2SC3510 Input and Output Reflection Coefficient vs. Frequency Input and Output Reflection Coefficient S11&S22 (dB) 0 S22 –5 –10 S11 –15 VCC = 12 V, IC = 20 mA Input Power Level –50 dBm 0 250 500 Frequency f (MHz) 750 1,000 –20 Vhf to Uhf Wide Band Amp. Circuit 50 p 470 Input Rg = 50 Ω 50 p 50 p 5p T1 1,200 p Output L1 L2 2.4 k 1.2 p 4,400 p 110 4,400 p 2.5 p RL = 50 Ω 2,200 p VBB VCC Unit R : Ω C:F Parts Spcecification L1 : Inside dia φ3.0 mm, φ0.4 mm Polyurethane Coated Copper wire 12 Turns. L2 : Inside dia φ3.5 mm, φ0.5 mm Polyurethane Coated Copper wire 9 Turns. T1 : Balance wind used Ferrite Core Outside dia φ4.0 mm, Inside dia φ2.0 mm φ0.1 mm Polyurethane Coated Copper wire 3 Turns. Ratio Input to Output is 2 : 1 8 Unit: mm 0.65 0.10 3 – 0.4 + 0.05 – 0.16 – 0.06 + 0.10 1.5 ± 0.15 + 0.2 – 0.6 0 – 0.1 0.95 0.95 1.9 ± 0.2 2.95 ± 0.2 0.3 + 0.2 1.1 – 0.1 0.65 2.8 Hitachi Code JEDEC EIAJ Weight (reference value) MPAK — Conforms 0.011 g Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: (408) 433-1990 Fax: (408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher Stra§e 3 D-85622 Feldkirchen, Munich Germany Tel: (89) 9 9180-0 Fax: (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: (1628) 585000 Fax: (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: (2) 2718-3666 Fax: (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: (2) 735 9218 Fax: (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.