2SC5218

2SC5218 Silicon NPN Epitaxial ADE-208-279 1st. Edition Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 9 GHz typ • High gain, low noise figure PG = 13.0 dB typ, NF = 1.2 dB typ at f = 900 MHz Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SC5218 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Note: Marking is “YK–”. Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 15 9 1.5 50 150 150 –55 to +150 Unit V V V mA mW °C °C Attention: This device is very sensitive to electro static discharge. It is recommended to adopt appropriate cautions when handling this transistor. Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector cutoff current Symbol V(BR)CBO I CBO I CEO Emitter cutoff current DC current transfer ratio Collector output capacitance Gain bandwidth product Power gain Noise figure I EBO hFE Cob fT PG NF Min 15 — — — 50 — 6.0 10 — Typ — — — — 120 0.8 9.0 13 1.2 Max — 1 1 10 250 1.4 — — 2.5 pF GHz dB dB Unit V µA mA µA Test conditions I C = 10 µA, IE = 0 VCB = 12 V, IE = 0 VCE = 9 V, RBE = ∞ VEB = 1.5 V, IC = 0 VCE = 5 V, IC = 20 mA VCB = 5 V, IE = 0, f = 1 MHz VCE = 5 V, IC = 20 mA VCE = 5 V, IC = 20 mA, f = 900 MHz VCE = 5 V, IC = 5 mA, f = 900 MHz 2 2SC5218 DC Current Transfer Ratio vs. Collector Current 200 Maximum Collector Dissipation Curve Collector Power Dissipation PC (mW) 150 100 DC Current Transfer Ratio h FE 160 120 80 50 40 0 0.1 VCE = 5 V Pulse Test 1 10 Collector Current I C (mA) 100 0 50 100 150 Ambient Temperature Ta (°C) 10 Gain Bandwidth Product f T (GHz) VCE = 5V 8 Collector Output Capacitance Cob (pF) Gain Bandwidth Product vs. Collector Current 2.0 1.6 Collector Output Capacitance vs. Collector to Base Voltage IE = 0 f = 1 MHz 6 1.2 4 0.8 0.4 2 0 1 10 20 2 5 50 Collector Current I C (mA) 100 0 0.5 1 2 5 10 20 50 Collector to Base Voltage V CB (V) 3 2SC5218 20 Power Gain vs. Collector Current VCE = 5V f = 900 MHz Power Gain PG (dB) Noise Figure NF (dB) 16 4 5 Noise Figure vs. Collector Current VCE = 5V f = 900 MHz 12 3 8 2 4 0 1 2 5 10 20 50 Collector Current I C (mA) 100 1 0 1 2 5 10 20 50 Collector Current I C (mA) 100 20 S 21 Parameter |S 21 | (dB) S21 Parameter vs. Collector Current VCE = 5V f = 1 GHz 16 12 8 4 0 1 2 5 10 20 50 Collector Current I C (mA) 100 4 2SC5218 S11 Parameter vs. Frequency .8 .6 .4 3 .2 4 5 10 0 .2 .4 .6 .8 1.0 1.5 2 3 45 10 –10 –.2 –5 –4 –3 –.4 –.6 –.8 –1.5 –2 –120° –1 –90° 180° 0° 150° 30° 1 1.5 2 S21 Parameter vs. Frequency 90° 120° Scale: 6 / div. 60° –150° –30° –60° Condition: V CE = 5 V , Zo = 50 Ω 100 to 1000 MHz (100 MHz step) (I C = 5 mA) (I C = 20 mA) Condition: V CE = 5 V , Zo = 50 Ω 100 to 1000 MHz (100 MHz step) (I C = 5 mA) (I C = 20 mA) S12 Parameter vs. Frequency 90° 120° S22 Parameter vs. Frequency .8 .6 .4 3 1 1.5 2 30° .2 Scale: 0.04 / div. 60° 150° 4 5 10 180° 0° 0 .2 .4 .6 .8 1.0 1.5 2 3 45 10 –10 –.2 –150° –30° –.4 –120° –60° –90° –.6 –.8 –1.5 –2 –1 –5 –4 –3 Condition: V CE = 5 V , Zo = 50 Ω 100 to 1000 MHz (100 MHz step) (I C = 5 mA) (I C = 20 mA) Condition: V CE = 5 V , Zo = 50 Ω 100 to 1000 MHz (100 MHz step) (I C = 5 mA) (I C = 20 mA) 5 2SC5218 S Parameter (VCE = 5 V, IC = 5 mA, ZO = 50 Ω) Freq. (MHz) 100 200 300 400 500 600 700 800 900 1000 S11 MAG. 0.817 0.701 0.602 0.536 0.495 0.468 0.447 0.434 0.423 0.428 ANG. –34.7 –64.5 –88.3 –106 –120 –132 –141 –150 –157 –164 S21 MAG. 14.1 11.6 9.32 7.61 6.40 5.50 4.80 4.27 3.83 3.50 ANG. 156 136 122 112 105 99.5 94.9 90.9 87.2 83.9 S12 MAG. 0.034 0.058 0.073 0.083 0.091 0.097 0.104 0.110 0.117 0.124 ANG. 72.3 59.8 52.9 49.8 48.9 49.3 50.0 50.9 52.1 53.3 S22 MAG. 0.916 0.761 0.620 0.520 0.447 0.396 0.357 0.327 0.305 0.287 ANG. –19.8 –34.8 –43.9 –49.3 –52.5 –54.5 –55.7 –56.5 –57.5 –58.4 S Parameter (VCE = 5 V, IC = 20 mA, ZO = 50 Ω) Freq. (MHz) 100 200 300 400 500 600 700 800 900 1000 S11 MAG. 0.529 0.427 0.386 0.370 0.366 0.367 0.364 0.360 0.362 0.364 ANG. –70.4 –111 –134 –150 –159 –167 –174 –179 176 171 S21 MAG. 29.9 19.0 13.4 10.2 8.28 6.96 6.01 5.28 4.71 4.27 ANG. 136 115 104 98.0 93.7 89.7 87.0 84.2 81.7 79.3 S12 MAG. 0.025 0.038 0.048 0.058 0.069 0.080 0.091 0.102 0.115 0.126 ANG. 64.9 60.3 61.8 64.3 66.6 67.8 68.7 69.5 69.4 69.6 S22 MAG. 0.716 0.462 0.330 0.260 0.214 0.184 0.162 0.146 0.133 0.123 ANG. –39.8 –56.6 –63.2 –66.2 –67.8 –68.8 –69.1 –69.7 –70.4 –71.5 6 Unit: mm 0.65 0.10 3 – 0.4 + 0.05 – 0.16 – 0.06 + 0.10 1.5 ± 0.15 + 0.2 – 0.6 0 – 0.1 0.95 0.95 1.9 ± 0.2 2.95 ± 0.2 0.3 + 0.2 1.1 – 0.1 0.65 2.8 Hitachi Code JEDEC EIAJ Weight (reference value) MPAK — Conforms 0.011 g Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. 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Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: (2) 2718-3666 Fax: (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: (2) 735 9218 Fax: (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.