2SD1504

2SD1504 Silicon NPN Epitaxial Application Low frequency amplifier, Muting Outline SPAK 1 23 1. Emitter 2. Collector 3. Base 2SD1504 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ic (peak) PC Tj Tstg Ratings 30 15 5 0.5 1.0 300 150 –55 to +150 Unit V V V A A mW °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 30 15 5 — 1 Typ — — — — — 0.65 0.15 0.018 300 0.5 Max — — — 10 1200 — 0.5 — — — Unit V V V µA Test conditions I C = 10 µA, IE = 0 I C = 1 mA, RBE = ∞ I E = 10 µA, IC = 0 VCB = 20 V, IE = 0 VCE = 1 V, IC = 150 mA*2 Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Base to emitter voltage Collector to emitter saturation voltage V(BR)EBO I CBO hFE* VBE VCE(sat) VCE(sat) Gain bandwidth product On resistance fT ron 250 — — — — — V V V MHz Ω VCE = 1 V, IC = 150 mA I C = 500 mA, IB = 50 mA*2 I C = 30 mA, IB = 3 mA VCE = 1 V, IC = 50 mA I B = 2 mA Notes: 1. The 2SD1504 is grouped by h FE as follows. 2. Pulse test D 250 to 500 E 400 to 800 F 600 to 1200 2 2SD1504 Maximum Collector Dissipation Curve Collector Power Dissipation PC (mW) 300 Collector Current IC (mA) Typical Output Characteristics 10 8 15.0 200 6 12.5 10.0 4 7.5 5.0 100 2 IB = 2.5 µA 0 50 100 Ambient Temperature Ta (°C) 150 0 2 4 6 8 10 Collecter to Emitter Voltage VCE (V) Typical Output Characteristics 100 160 140 120 100 80 60 Typical Transfer Characteristics 10 VCE = 1 V Collector Current IC (mA) Collector Current IC (mA) 80 8 60 6 40 4 20 40 IB = 20 µA 2 0 0.2 0.4 0.6 0.8 1.0 Collector to Emitter Voltage VCE (V) 0 0.2 0.4 0.6 0.8 1.0 Base to Emitter Voltage VBE (V) 3 2SD1504 DC Current Transfer Ratio vs. Collector Current Collector to Emitter Saturation Voltage VCE(sat) (V) Base to Emitter Saturation Voltage VBE(sat) (V) 1,000 DC Current Transfer Ratio hFE 300 100 30 10 3 1 1 VCE = 1 V Pulse 1,000 VBE(sut) 300 100 30 10 3 1 1 3 10 30 100 300 1,000 Collector Current IC (mA) IC/IB = 10 Pulse VCE(sat) Saturation Voltage vs. Collector Current 3 10 30 100 300 Collector current IC (mA) 1000 Gain Bandwidth Product vs. Collector Current Gain Bandwidth Product fT (MHz) VCE = 1 V 500 200 100 50 20 10 2 5 10 20 50 100 200 Collector Current IC (mA) Collector Output Capacitance Cob (pF) 1,000 100 Collector Output Capacitance vs. Collector to Base Voltage f = 1 MHz IE = 0 30 10 3 1 1 3 10 30 100 Collector to Base Voltage VCB (V) 4 2SD1504 On Resistance vs. Base Current 10 IN 3 kΩ 3 kΩ OUT On Resistance ron (Ω) 3 IB f = 10 kHz 1.0 0.3 0.1 0.1 0.3 1.0 3 Base Current IB (mA) 10 5 4.2 Max 1.8 Max 3.2 Max 2.2 Max Unit: mm 0.45 ± 0.1 14.5 Min 0.6 0.6 Max 0.4 ± 0.1 1.27 1.27 2.54 Hitachi Code JEDEC EIAJ Weight (reference value) SPAK — — 0.10 g Cautions 1. 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