2SD2031

2SD2030, 2SD2031 Silicon NPN Epitaxial Application Low frequency high voltage amplifier Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SD2030, 2SD2031 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg 2SD2030 160 160 5 100 400 150 –55 to +150 2SD2031 200 200 5 100 400 150 –55 to +150 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol 2SD2030 V(BR)CBO 2SD2031 Collector to emitter breakdown voltage 2SD2030 V(BR)CEO 2SD2031 Emitter to base breakdown voltage Collector cutoff current V(BR)EBO Min 160 200 160 200 5 — — — — 10 V µA I E = 10 µA, IC = 0 VCB = 140 V, IE = 0 VCB = 160 V, IE = 0 hFE1* hFE2 Base to emitter voltage Collector to emitter saturation voltage Gain bandwidth product Collector output capacitance Note: Grade hFE1 B 60 to 120 C 100 to 200 VBE VCE(sat) fT Cob 1 Typ — Max — Unit V Test conditions I C = 10 µA, IE = 0 — — V I C = 1 mA, RBE = ∞ 2SD2030 I CBO 2SD2031 DC current transfer ratio 60 30 — — — — — — — — 140 3.8 200 — 1.5 0.5 — — V V MHz pF VCE = 5 V, IC = 10 mA VCE = 5 V, IC = 1 mA VCE = 5 V, IC = 10 mA I C = 30 mA, IB = 3 mA VCE = 5 V, IC = 10 mA VCB = 10 V, IE = 0, f = 1 MHz 1. The 2SD2030 and 2SD2031 are grouped by h FE1 as follows. 2 2SD2030, 2SD2031 Maximum Collector Dissipation Curve Collector Power Dissipation Pc (mW) 600 Collector Current IC (mA) Typical Output Characteristics 20 16 400 12 8 200 4 120 110 100 90 80 70 60 50 40 30 20 10 µA IB = 0 0 50 100 150 Ambient Temperature Ta (°C) 0 2 4 6 8 10 Collector to Emitter Voltage VCE (V) Typical Transfer Characteristics 100 Collector Current IC (mA) 50 DC Current Transfer Ratio hFE VCE = 5 V Pulse Test 500 200 DC Current Transfer Ratio vs. Collector Current VCE = 5 V Pulse Test Ta = 75°C 100 –25 50 20 10 5 25 5°C 20 10 5 25 2 1 0 0.2 0.4 0.6 0.8 Base to Emitter Voltage VBE (V) 1.0 Ta = 7 –25 1 2 5 10 20 50 Collector Current IC (mA) 100 3 2SD2030, 2SD2031 Saturation Voltage vs. Collector Current Collector to Emitter Saturation Voltage VCE (sat) (V) Base to Emitter Saturation Voltage VBE (sat) (V) 5 Gain Bandwidth Product fT (MHz) lC = 10 lB Pulse Test 2 1.0 0.5 VBE (sat) 500 VCE = 5 V Pulse Test Gain Bandwidth Product vs. Collector Current 200 100 50 Ta = –25°C 75 25 0.2 0.1 0.05 1 VCE (sat) 75 25 Ta = – 20 10 5 0.5 25°C 2 5 10 20 50 Collector Current IC (mA) 100 1.0 2 5 10 20 Collector Current IC (mA) 50 Collector Output Capacitance vs. Collector to Base Voltage Collector Output Capacitance Cob (pF) 50 20 10 5 f = 1 MHz IE = 0 2 1.0 0.5 1 2 5 10 20 50 100 Collector to Base Voltage VCB (V) 4 Unit: mm 4.8 ± 0.3 3.8 ± 0.3 2.3 Max 0.5 ± 0.1 0.7 0.60 Max 12.7 Min 5.0 ± 0.2 0.5 1.27 2.54 Hitachi Code JEDEC EIAJ Weight (reference value) TO-92 (1) Conforms Conforms 0.25 g Cautions 1. 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