2SD2124S

2SD2124(L)/(S) Silicon NPN Epitaxial Application Low frequency power amplifier Outline DPAK 4 4 1 2 3 12 1. Base 2. Collector 3. Emitter 4. Collector 2, 4 1 ID 6 kΩ (Typ) 0.5 kΩ (Typ) 3 S Type 3 L Type 2SD2124(L)/(S) Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature C to E diode forward current Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC I C(peak) PC * Tj Tstg ID* 1 1 Ratings 120 120 7 1.5 3.0 18 150 –55 to +150 1.5 Unit V V V A A W °C °C A Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 120 120 7 — — 2000 — — — — — — — Typ — — — — — — — — — — — 0.5 2.0 Max — — — 10 10 30000 1.5 2.0 2.0 2.5 3.0 — — V µs µs V V Unit V V V µA Test conditions I C = 0.1 mA, IE = 0 I C = 10 mA, RBE = ∞ I E = 50 mA, IC = 0 VCB = 100 V, IE = 0 VCE = 100 V, RBE = ∞ VCE = 3 V, IC = 1 A*1 I C = 1 A, IB = 1 mA*1 I C = 1.5 A, IB = 1.5 mA*1 I C = 1 A, IB = 1 mA*1 I C = 1.5 A, IB = 1.5 mA*1 I D = 1.5 A*1 I C = 1 A, IB1 = –IB2 = 1 mA Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current V(BR)EBO I CBO I CEO DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage C to E diode forward voltage Turn on time Turn off time Note: 1. Pulse test. hFE VCE(sat) VCE(sat) VBE(sat) VBE(sat) VD t on t off 2 2SD2124(L)/(S) Maximum Collector Dissipation Curve 30 Collector power dissipation PC (W) 10 3.0 1.0 0.3 0.1 IiC(max) C(peak) IC(max) Area of Safe Operation Collector current IC (A) 10 0 20 µs s s 1m 0m =1 n tio PW era ) Op 5°C DC = 2 (T C 10 0 50 100 Case temperature TC (°C) 150 0.03 Ta = 25°C 1 shot pulse 0.01 3 10 30 100 300 Collector to emitter voltage VCE (V) Typical Output Characteristics 2.0 DC current transfer ratio hFE 30,000 DC Current Transfer Ratio vs. Collector Current Collector current IC (A) 1.6 200 180 160 140 120 µ A 10,000 1.2 3,000 0.8 1,000 VCE = 3 V Ta = 25°C 300 0.03 1.0 0.1 0.3 Collector current IC (A) 3.0 0.4 IB = 0 0 TC = 25°C 4 6 8 10 2 Collector to emitter voltage VCE (V) 3 2SD2124(L)/(S) Saturation Voltage vs. Collector Current Collector to emitter saturation voltage VCE(sat) (V) Base to emitter saturation voltage VBE(sat) (V) 10 3 VBE(sat) 1.0 V CE(sat) 0.3 IC = 500 IB Ta = 25°C 0.1 0.03 0.1 1.0 0.3 Collector current IC (A) 3.0 4 Unit: mm 6.5 ± 0.5 5.4 ± 0.5 1.7 ± 0.5 2.3 ± 0.2 0.55 ± 0.1 5.5 ± 0.5 1.2 ± 0.3 3.1 ± 0.5 1.15 ± 0.1 0.8 ± 0.1 16.2 ± 0.5 2.29 ± 0.5 2.29 ± 0.5 0.55 ± 0.1 Hitachi Code JEDEC EIAJ Weight (reference value) DPAK (L)-(1) — Conforms 0.42 g Cautions 1. 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