2SH22

ADE–208–295 (Z) 2SH22 Silicon N-Channel IGBT 1st. Edition Feb. 1995 Application High speed power switching TO–3PL Features 2 • High speed switching • Low on saturation voltage 1 3 1 2 1. Gate 2. Collector 3. Emitter 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage Gate to emitter voltage Collector current Collector peak current Collector dissipation Channel temperature Storage temperature Symbol VCES Ratings 600 ±20 75 150 200 150 –55 to +150 Unit V V A A W °C °C ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ic(peak) PC* Tj IC VGES ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— Tstg ——————————————————————————————————————————— * Value at Tc = 25°C 1 2SH22 Table 2 Electrical Characteristics (Ta = 25°C) Item Collector to emitter breakdown voltage Zero gate voltage collector current Gate to emitter leak current Gate to emitter cutoff current Collector to emitter saturation voltage Collector to emitter saturation voltage Input capacitance Symbol V(BR)CES ICES IGES Min 600 Typ — Max — Unit Test conditions V IC = 100 µA, VGE = 0 VCE = 600 V, VGE = 0 VGE = ±20 V, VCE = 0 ——————————————————————————————————————————— ——————————————————————————————————————————— — — 0.5 mA ——————————————————————————————————————————— — 3.0 — — — 1.5 ±1 6.0 — µA V V ——————————————————————————————————————————— ——————————————————————————————————————————— VCE(sat)1 VCE(sat)2 Cies IC = 35 A, VGE = 15 V IC = 75 A, VGE = 15 V VCE = 10 V, VGE = 0, f = 1 MHz IC = 75 A, RL = 4 Ω, VGE = ±15 V Rg = 50 Ω VGE(off) IC = 1 mA, VCE = 10 V ——————————————————————————————————————————— — 2.0 2.6** V ——————————————————————————————————————————— — 6200 — pF ——————————————————————————————————————————— Switching time ———————————————— ton tf — — — 900 2000 2800 — — — tr — 700 — ns ———————————————— ———————————————— toff **VCE(sat)2 is specified at the correlated test condition (IC=50A) ——————————————————————————————————————————— 2 2SH22 Power vs. Temperature Derating 300 Pc (W) 100 I C (A) Maximum Safe Operation Area 1 m 100 PW s µs = 10 DC (1ms (T Op sh c= e ot) 25 ratio °C n ) Collector Dissipation 200 10 Collector Current 1 100 0.1 Ta = 25 °C 0.01 0 50 100 Case Temperature 150 Tc (°C) 200 1 10 100 1000 Collector to Emitter Voltage V CE (V) Reverse Bias SOA 100 Typical Output Characteristics 200 I C (A) Pulse Test Ta = 25 °C V GE = 15 V 12 V I C (A) 160 Collector Current Collector Current 10 120 80 10 V 1 8V 40 6V Tc = 25 °C 0.1 0 200 400 600 800 Collector to Emitter Voltage V CE (V) 0 2 4 6 8 10 Collector to Emitter Voltage V CE (V) 3 2SH22 Typical Transfer Characteristics Collector to Emitter Saturation Voltage V CE(sat) (V) 200 I C (A) 10 Collector to Emitter Saturation Voltage vs. Gate to Emitter Voltage 160 25 °C Tc = –25 °C 75 °C 8 50 A 25 A I C = 75 A Collector Current 120 6 80 4 40 Pulse Test V CE = 10 V 0 4 8 12 Gate to Emitter Voltage 16 V GE (V) 20 2 Pulse Test 0 4 8 12 Gate to Emitter Voltage 16 20 V GE (V) Collector to Emitter Saturation Voltage vs. Collector Current Collector to Emitter Saturation Voltage V CE(sat) (V) 50 20 10 5 2 –25 °C 1 5 10 20 50 100 200 Collector Current I C (A) Tc =75 °C 25 °C Pulse Test VGE = 15 V 10000 C (pF) Typical Capacitance vs. Collectot to Emitter Voltage Cies 1000 Capacitance Coes 100 V GE = 0 f = 1 MHz Cres 0.5 2 0 10 20 30 40 50 Collector to Emitter Voltage V CE (V) 4 2SH22 Dynamic Input Characteristics Collector to Emitter Voltage VCE (V) 500 VCC = 400 V 300 V 200 V 20 Gate to Emitter Voltage VGE (V) Switching Characteristics 2000 tf 1000 t (ns) 500 td(off) 400 16 V GE Switching Time 300 12 200 td(on) 100 50 20 1 tr V CC = 300 V V GE = ±15 V Rg = 50 Ω Tc = 25 °C 2 5 10 50 20 Collector Current I C (A) 100 200 VCC = 400 V 300 V 200 V V CE 0 80 160 240 320 Gate Charge Qg (nc) 8 100 I C = 75 A 4 0 400 Switching Characteristics 5000 5000 Switching Characteristics t (ns) t (ns) 2000 1000 tf 2000 1000 500 tf td(off) tr td(on) Switching Time 500 td(off) 200 100 td(on) 50 5 I C = 75 A RL = 4 Ω V GE = ±15 V Tc = 25 °C 500 Switching Time tr 200 100 50 –25 I C = 75 A RL = 4 Ω V GE = ±15 V Rg = 50 Ω 0 25 50 75 100 Case Temperature Tc (°C) 125 10 50 100 Gate Resistance Rg ( Ω) 5 2SH22 Normalized Transient Thermal Impedance vs. Pulse Width 3 Normalized Transient Thermal Impedance γ s (t) 1 D=1 0.5 0.3 0.2 0.1 0.1 0.05 0.02 θ j – c(t) = γ s (t) • θ j – c θ j – c = 0.625 °C/W, Tc = 25 °C PDM D= PW T 0.03 0.01 1 t sho pul se PW T 0.01 10 µ 100 µ 1m 10 m Pulse Width 100 m PW (S) 1 10 Switching Time Test Circuit Waveforms 90% 0 10% Ic Monitor Vin V CE Vin Monitor VCE Monitor Rg Vin ± 15 V RL 90% V CC Ic td(on) ton 10% tr td(off) toff 10% tf 90% D.U.T. 6 2SH22 Package Dimensions • TO–3PL 6.0 ± 0.2 20.0 ± 0.3 Unit : mm 3.3 ± 0.2 5.0 ± 0.2 26.0 ± 0.3 1.6 20.0 ± 0.6 2.5 ± 0.3 1.4 2.2 3.0 2 3 5.45 ± 0.5 +0.25 1.6 –0.1 +0.25 0.6 –0.1 2.8 ± 0.2 1 5.45 ± 0.5 1.0 0.5 3.8 7.4 Hitachi Code EIAJ JEDEC TO–3PL — — 7 Cautions 1. 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