2SJ130S

2SJ130(L), 2SJ130(S) Silicon P-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and ultrasonic power oscillators Outline DPAK-1 4 4 1 1 D G 1. Gate 2. Drain 3. Source 4. Drain S 2 3 23 2SJ130(L), 2SJ130(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: 1. Value at TC = 25°C Symbol VDSS VGSS ID I D(pulse) I DR Pch* Tch Tstg 1 Ratings –300 ±20 –1 –2 –1 20 150 –55 to +150 Unit V V A A A W °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol Min V(BR)DSS V(BR)GSS I GSS –300 ±20 — — –2.0 — 0.25 — — — — — — — — — Typ — — — — — 6.0 0.4 235 65 16 10 25 35 45 –0.9 200 Max — — ±10 –100 –4.0 8.5 — — — — — — — — — — Unit V V µA µA V Ω S pF pF pF ns ns ns ns V ns I F = –1 A, VGS = 0 I F = –1 A, VGS = 0, diF/dt = 50 A/µs I D = –0.5 A, VGS = –10 V, RL = 60 Ω Test conditions I D = –10 mA, VGS = 0 I G = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = –240 V, VGS = 0 I D = –1 mA, VDS = –10 V I D = –0.5 A, VGS = –10 V*1 I D = –0.5 A, VDS = –20 V*1 VDS = –10 V, VGS = 0, f = 1 MHz Zero gate voltage drain current I DSS Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 1. Pulse test VGS(off) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 2 2SJ130(L), 2SJ130(S) Power vs. Temperature Derating 30 Channel Dissipation Pch (W) –5 Maximum Safe Operation Area –2 Drain Current ID (A) 20 –1.0 –0.5 D C PW O pe ra = 10 n 10 µs 10 0 µs 1 m s m C tio s (T (1 10 = Sh –0.2 –0.1 –0.05 –5 Operation in this area is limited by RDS (on) Ta = 25°C 25 ot ) ) °C 0 50 100 150 Case Temperature TC (°C) –10 –20 –50 –100 –200 –500 Drain to Source Voltage VDS (V) Typical Output Characteristics –2.0 –15 V –1.6 Drain Current ID (A) –7 V –10 V –6 V Pulse Test Drain Current ID (A) –2.0 Typical Transfer Characteristics –25°C –1.6 VDS = –20 V Pulse Test –1.2 TC = 25°C 75°C –1.2 –0.8 –5 V –0.8 –0.4 VGS = –4 V –0.4 0 –10 –30 –40 –20 –50 Drain to Source Voltage VDS (V) 0 –2 –6 –8 –10 –4 Gate to Source Voltage VGS (V) 3 2SJ130(L), 2SJ130(S) Drain to Source Saturation Voltage VDS (on) (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage –20 50 20 VGS = –10 V 10 5 –15 V 2 1.0 0.5 –0.05 –0.1 –0.2 –0.5 –1.0 –2 Drain Current ID (A) –5 Pulse Test Pulse Test –16 ID = –12 –2 A Static Drain to Source on State Resistance RDS (on) (Ω) Static Drain to Source on State Resistance vs. Drain Current –8 –1 A –4 –0.5 A 0 –20 –4 –12 –16 –8 Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance RDS (on) (Ω) Forward Transfer Admittance yfs (S) 20 5 VDS = –20 V Pulse Test VGS = –10 V Pulse Test 2 1.0 0.5 ID = –2 A 12 –1 A Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance vs. Drain Current 16 –25°C Ta = 25°C 8 –0.5 A 4 0.2 0.1 75°C 0 –40 0 80 120 40 Case Temperature TC (°C) 160 0.05 –0.02 –0.05 –0.1 –0.2 –0.5 –1.0 Drain Current ID (A) –2 4 2SJ130(L), 2SJ130(S) Forward Transfer Admittance vs. Frequency Forward Transfer Admittance yfs (S) 5 TC = 25°C VDS = –20 V ID = –0.5 A Ciss Capacitance C (pF) 100 Coss VGS = 0 f = 1 MHz 1,000 Typical Capacitance vs. Drain to Source Voltage 2 1 0.5 10 Crss 0.2 0.1 0.05 0.2 M 0.5 M 1.0 M 2 M 5M Frequency f (Hz) 10 M 20 M 0 –20 –10 –30 –40 Drain to Source Voltage VDS (V) –50 1 Dynamic Input Characteristics 0 Gate to Source Voltage VGS (V) RDrain to Source VDS (V) VDD = –50V –100 V –200 V 50 Switching Time t (ns) td (off) 20 10 5 td (on) tr tf –4 VDD = –200 V –200 VDS –50 V –12 VGS –400 ID = –1 A –500 0 4 8 12 16 Gate Charge Qg (nc) –20 20 –16 –100 V –8 0 100 Switching Characteristics –100 –300 VGS = –10 V . . PW = 2 µs VDD = 30 V 2 duty < 1% 1 –0.05 –0.1 –0.2 –0.5 –1.0 –2 Drain Current ID (A) –5 5 2SJ130(L), 2SJ130(S) Reverse Drain Current vs. Source To Drain Voltage –2.0 Reverse Dratin Current IDR (A) VGS = 0 Pulse Test –1.6 –1.2 –0.8 –0.4 –5 V, –10 V VGS = 0, 10 V 0 0 –2.0 –0.4 –0.8 –1.2 –1.6 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance γS (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 TC = 25°C 1.0 D=1 0.5 0.3 0.1 0.2 0.1 0.05 0.02 0.03 0.01 Pulse hot 1S θch–c (t) = γS (t) · θch–c θch–c = 6.25°C/W, TC = 25°C PDM PW 1 D = PW T T 100 µ 1m 10 m Pulse Width PW (s) 100 m 0.01 10 µ 10 Waveforms Switching Time Test Circuit Vin Monitor Vout Monitor D.U.T RL 50 Ω Vin –10 V Vout td (on) 90% 10% tr td (off) 90% 90% 10% tf Vin 10% VDD . = –30 V . 6 Unit: mm 6.5 ± 0.5 5.4 ± 0.5 1.7 ± 0.5 2.3 ± 0.2 0.55 ± 0.1 5.5 ± 0.5 1.2 ± 0.3 3.1 ± 0.5 1.15 ± 0.1 0.8 ± 0.1 16.2 ± 0.5 2.29 ± 0.5 2.29 ± 0.5 0.55 ± 0.1 Hitachi Code JEDEC EIAJ Weight (reference value) DPAK (L)-(1) — Conforms 0.42 g Cautions 1. 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Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: (2) 2718-3666 Fax: (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: (2) 735 9218 Fax: (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.