2SK1168

2SK1167, 2SK1168 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO-3P D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1167, 2SK1168 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1167 2SK1168 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Symbol VDSS Ratings 450 500 ±30 15 60 15 100 150 –55 to +150 Unit V V A A A W °C °C 2 2SK1167, 2SK1168 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Symbol Min 2SK1167 V(BR)DSS 2SK1168 V(BR)GSS I GSS 450 500 ±30 — — — — — — ±10 250 V µA µA I G = ±100 µA, VDS = 0 VGS = ±25 V, VDS = 0 VDS = 360 V, VGS = 0 VDS = 400 V, VGS = 0 VGS(off) 2.0 — — |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 8 — — — — — — — — — — 0.25 0.30 13 2050 600 75 30 110 150 70 1.0 500 3.0 0.36 0.40 — — — — — — — — — — S pF pF pF ns ns ns ns V ns I F = 15 A, VGS = 0 I F = 15 A, VGS = 0, diF/dt = 100 A/µs I D = 8 A, VGS = 10 V, RL = 3.75 Ω I D = 8 A, VDS = 10 V *1 VDS = 10 V, VGS = 0, f = 1 MHz V Ω I D = 1 mA, VDS = 10 V I D = 8 A, VGS = 10 V *1 Typ — Max — Unit V Test conditions I D = 10 mA, VGS = 0 Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current 2SK1167 I DSS 2SK1168 Gate to source cutoff voltage Static Drain to source 2SK1167 RDS(on) on state resistance 2SK1168 Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 1. Pulse test 3 2SK1167, 2SK1168 Power vs. Temperature Derating 100 150 Channel Dissipation Pch (W) 30 Drain Current ID (A) D 10 C PW Maximum Safe Operation Area 10 0 µs µs 100 10 3 1.0 0.3 Ta= 25°C O = 1 10 m s m pe s ra tio n (T (1 Sh C= 50 Operation in this area is limited by RDS (on) 25 ot ) °C ) 2SK1168 2SK1167 0 50 100 Case Temperature TC (°C) 150 0.1 1 3 10 30 100 300 1,000 Drain to Source Voltage VDS (V) Typical Output Characteristics 20 20 10 V 6V Drain Current ID (A) Pulse Test 12 5.0 V 5.5 V 16 Typical Transfer Characteristics VDS = 20 V Pulse Test 16 Drain Current ID (A) 12 8 4.5 V 4 VGS = 4V 0 4 8 12 20 16 Drain to Source Voltage VDS (V) 8 4 75°C –25°C TC = 25°C 0 2 4 6 8 Gate to Source Voltage VGS (V) 10 4 2SK1167, 2SK1168 Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance RDS(on) (Ω) 10 Drain to Source Saturation Voltage VDS (on) (V) Pulse Test 20 A 6 5 2 1.0 0.5 VGS = 10 V Static Drain to Source on State Resistance vs. Drain Current Pulse Test 8 4 2 10 A ID = 5 A 0.2 0.1 0.05 1 2 10 20 5 Drain Current ID (A) 15 V 0 4 8 12 16 20 50 100 Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Temperature Static Drain to Source on State Resistance RDS (on) (Ω) Forward Transfer Admittance yfs (S) 1.0 VGS = 10 V Pulse Test ID = 20 A Forward Transfer Admittance vs. Drain Current 50 20 10 5 VDS = 20 V Pulse Test –25°C TC = 25°C 75°C 0.8 0.6 0.4 5A 0.2 10 A 2 1.0 0.5 0.2 0 –40 0 40 80 120 Case Temperature TC (°C) 160 2 0.5 1.0 5 Drain Current ID (A) 10 20 5 2SK1167, 2SK1168 Body to Drain Diode Reverse Recovery Time 5,000 Reverse Recovery Time trr (ns) 2,000 1,000 500 di/dt = 100 A/µs, Ta = 25°C VGS = 0 Pulse Test 10,000 VGS = 0 f = 1 MHz Capacitance C (pF) Ciss 1,000 Coss Typical Capacitance vs. Drain to Source Voltage 200 100 50 0.2 100 Crss 10 0.5 1.0 2 5 10 Reverse Drain Current IDR (A) 20 0 10 20 30 40 50 Drain to Source Voltage VDS (V) Dynamic Input Characteristics 500 Drain to Source Voltage VDS (V) VDD = 100 V 400 VDS 300 250 V 400 V VGS 12 16 20 Gate to Source Voltage VGS (V) Switching Characteristics 1,000 500 Switching Time t (ns) 200 100 50 t d (on) 20 10 0.5 VGS = 10 V, VDD 30 V PW = 2 µs, duty < 1% t d (off) tr tf 200 100 VDD = 400 V 250 V 100 V ID = 15 A 8 4 0 20 40 60 80 Gate Charge Qg (nc) 0 100 1.0 2 5 10 20 Drain Current ID (A) 50 6 2SK1167, 2SK1168 Reverse Drain Current vs. Source to Drain Voltage 20 Reverse Drain Current IDR (A) Pulse Test 16 12 8 4 5 V, 10 V VGS = 0, –10 V 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance γS (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 D=1 0.5 0.3 0.2 0.1 1.0 TC = 25°C 0.1 0.05 0.02 0.01 Pulse 0.03 ot 1Sh 0.01 10 µ 100 µ 1m 10 m Pulse Width PW (s) θch–c (t) = γS(t) · θch–c θch–c = 1.25°C/W,TC = 25°C PDM D = PW T PW T 100 m 1 10 Switching Time Test Circuit Vin Monitor Vout Monitor D.U.T RL Vin Vout 50 Ω Vin = 10 V . VDD = 30 V . td (on) 90 % tr 90 % td (off) tf 10 % 10 % 10 % Wavewforms 90 % 7 Unit: mm 5.0 ± 0.3 15.6 ± 0.3 1.0 φ3.2 ± 0.2 4.8 ± 0.2 1.5 0.5 14.9 ± 0.2 19.9 ± 0.2 1.6 1.4 Max 2.0 2.8 18.0 ± 0.5 1.0 ± 0.2 2.0 0.6 ± 0.2 3.6 0.9 1.0 5.45 ± 0.5 5.45 ± 0.5 Hitachi Code JEDEC EIAJ Weight (reference value) TO-3P — Conforms 5.0 g 0.3 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. 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Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: (2) 2718-3666 Fax: (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: (2) 735 9218 Fax: (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.