2SK1169

2SK1169, 2SK1170 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO-3P D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1169, 2SK1170 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1169 2SK1170 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Symbol VDSS Ratings 450 500 ±30 20 80 20 120 150 –55 to +150 Unit V V A A A W °C °C 2 2SK1169, 2SK1170 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Symbol Min 2SK1169 V(BR)DSS 2SK1170 V(BR)GSS I GSS 450 500 ±30 — — — — — — ±10 250 V µA µA I G = ±100 µA, VDS = 0 VGS = ±25 V, VDS = 0 VDS = 360 V, VGS = 0 VDS = 400 V, VGS = 0 VGS(off) 2.0 — — |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 10 — — — — — — — — — — 0.20 0.22 16 2800 780 90 32 115 200 90 1.0 500 3.0 0.25 0.27 — — — — — — — — — — S pF pF pF ns ns ns ns V ns I F = 20 A, VGS = 0 I F = 20 A, VGS = 0, diF/dt = 100 A/µs I D = 10 A, VGS = 10 V, RL = 3 Ω I D = 10 A, VDS = 10 V *1 VDS = 10 V, VGS = 0, f = 1 MHz V Ω I D = 1 mA, VDS = 10 V I D = 10 A, VGS = 10 V *1 Typ — Max — Unit V Test conditions I D = 10 mA, VGS = 0 Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current 2SK1169 I DSS 2SK1170 Gate to source cutoff voltage Static Drain to source 2SK1169 RDS(on) on state resistance 2SK1170 Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 1. Pulse test 3 2SK1169, 2SK1170 Power vs. Temperature Derating 100 150 Channel Dissipation Pch (W) 30 Drain Current ID (A) 10 D C PW Maximum Safe Operation Area 10 1 = 10 0 µs µs 100 50 0 50 100 Case Temperature TC (°C) 150 m s pe 10 m ra tio s (1 3 n (T Sho C = t) 1.0 25 Operation in this area °C is limited by RDS (on) ) 0.3 2SK1170 Ta = 25°C 2SK1169 0.1 1 3 10 30 100 300 1,000 Drain to Source Voltage VDS (V) O Typical Output Characteristics 50 20 10 V 7V 6V 16 Pulse Test Drain Current ID (A) Typical Transfer Characteristics VDS = 20 V Pulse Test 40 Drain Current ID (A) 30 12 20 5V 8 4 75°C –25°C TC = 25°C 10 VGS = 4 V 0 10 20 30 40 Drain to Source Voltage VDS (V) 50 0 2 4 6 8 10 Gate to Source Voltage VGS (V) 4 2SK1169, 2SK1170 Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance RDS (on) (Ω) 10 Drain to Source Saturation Voltage VDS (on) (V) Pulse Test 5 Pulse Test Static Drain to Source on State Resistance vs. Drain Current 8 2 1.0 0.5 6 20 A 4 10 A ID = 5 A 0 4 8 12 16 20 VGS = 10 V 15 V 0.2 0.1 0.05 1 2 5 10 20 Drain Current ID (A) 2 50 100 Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Temperature Static Drain to Source on State Resistance RDS (on) (Ω) Forward Transfer Admittance yfs (S) 1.0 VGS = 10 V Pulse Test 50 Forward Transfer Admittance vs. Drain Current 0.8 20 10 5 2 1.0 0.5 0.2 VDS = 20 V Pulse Test –25°C TC = 25°C 75°C 0.6 ID = 20 A 0.4 10 A 5A 0.2 0 –40 0 40 80 120 Case Temperature TC (°C) 160 0.5 1.0 5 2 Drain Current ID (A) 10 20 5 2SK1169, 2SK1170 Body to Drain Diode Reverse Recovery Time 5,000 Reverse Recovery Time trr (ns) di/dt = 100 A/µs, Ta = 25°C VGS = 0 Pulse Test Typical Capacitance vs. Drain to Source Voltage 10,000 Ciss Capacitance C (pF) 1,000 Coss VGS = 0 f = 1 MHz 2,000 1,000 500 200 100 50 0.5 100 Crss 10 1.0 2 5 10 20 Reverse Drain Current IDR (A) 50 0 10 20 30 40 50 Drain to Source Voltage VDS (V) Dynamic Input Characteristics 500 Drain to Source Voltage VDS (V) VDD = 100 V 250 V 400 V 300 VDS 12 VGS 8 V DD = 400 V 250 V 100 V ID = 20 A 20 Gate to Source Voltage VGS (V) 500 Switching Characteristics Switching Time t (ns) 400 16 200 100 50 tf tr td (off) 200 td (on) 20 10 5 0.5 VGS = 10 V VDD = 30 V PW = 2 µs, duty < 1% • • 100 4 0 40 80 120 160 Gate Charge Qg (nc) 0 200 1.0 2 5 10 20 Drain Current ID (A) 50 6 2SK1169, 2SK1170 Reverse Drain Current vs. Source to Drain Voltage 20 Reverse Drain Current IDR (A) Pulse Test 16 12 8 5 V, 10 V VGS = 0, –10 V 0 0.4 0.8 1.2 1.6 Source to Drain Voltage VSD (V) 2.0 4 Normalized Transient Thermal Impedance γS (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 D=1 0.5 0.3 0.2 0.1 1.0 TC = 25°C 0.1 0.05 0.02 0.01 Pulse 0.03 ot 1Sh θch–c (t) = γS (t) · θch–c θch–c = 1.04°C/W,TC = 25°C PDM D = PW T PW T 100 µ 1m 10 m Pulse Width PW (s) 100 m 1 10 0.01 10 µ Switching Time Test Circuit Vin Monitor Vout Monitor D.U.T RL Vin Vout 50 Ω Vin = 10 V . VDD = 30 V . td (on) 90 % tr 90 % td (off) tf 10 % 10 % 10 % Wavewforms 90 % 7 Unit: mm 5.0 ± 0.3 15.6 ± 0.3 1.0 φ3.2 ± 0.2 4.8 ± 0.2 1.5 0.5 14.9 ± 0.2 19.9 ± 0.2 1.6 1.4 Max 2.0 2.8 18.0 ± 0.5 1.0 ± 0.2 2.0 0.6 ± 0.2 3.6 0.9 1.0 5.45 ± 0.5 5.45 ± 0.5 Hitachi Code JEDEC EIAJ Weight (reference value) TO-3P — Conforms 5.0 g 0.3 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. 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Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: (2) 2718-3666 Fax: (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: (2) 735 9218 Fax: (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.