2SK1338

2SK1338 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO-220AB D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1338 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings 900 ±30 2 6 2 50 150 –55 to +150 Unit V V A A A W °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol Min V(BR)DSS V(BR)GSS I GSS 900 ±30 — — 2.0 — 0.9 — — — — — — — — — Typ — — — — — 5.0 1.5 425 175 85 10 35 60 50 0.9 700 Max — — ±10 250 3.0 7.0 — — — — — — — — — — Unit V V µA µA V Ω S pF pF pF ns ns ns ns V ns I F = 2 A, VGS = 0 I F = 2 A, VGS = 0, diF/dt = 100 A/µs I D = 1 A, VGS = 10 V, RL = 30 Ω Test conditions I D = 10 mA, VGS = 0 I G = ±100 µA, VDS = 0 VGS = ±25 V, VDS = 0 VDS = 720 V, VGS = 0 I D = 1 mA, VDS = 10 V I D = 1 A, VGS = 10 V *1 I D = 1 A, VDS = 20 V *1 VDS = 10 V, VGS = 0, f = 1 MHz Zero gate voltage drain current I DSS Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 1. Pulse test VGS(off) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 2 2SK1338 Power vs. Temperature Derating 60 Channel Dissipation Pch (W) 10 5 ar ea Maximum Safe Operation Area 10 µs 10 Drain Current ID (A) O is per lim at ite ion d in by th R is (o 2 1 0.5 0.2 0.1 0.05 0.02 0.01 0 n) 40 1 m µs ) ot °C sh 25 = (1 s (T C m 10 ion = rat e PW Op C D DS s 20 Ta = 25°C ) 0 50 100 Case Temperature TC (°C) 150 1 3 10 30 100 300 1,000 Drain to Source Voltage VDS (V) Typical Output Characteristics 5 Pulse Test 4 Drain Current ID (A) 10 V 6V 5.5 V 3 5.0 V 2 4.5 V 1 4.0 V VGS = 3.0 V 0 10 30 40 20 50 Drain to Source Voltage VDS (V) 0 Drain Current ID (A) 4 5 Typical Transfer Characteristics VDS = 20 V Pulse Test –25°C 3 TC = 25°C 75°C 2 1 2 6 8 4 10 Gate to Source Voltage VGS (V) 3 2SK1338 Drain to Source Saturation Voltage VDS (on) (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage 50 Pulse Test 40 Static Drain to Source on State Resistance vs. Drain Current Static Drain to Source on State Resistance RDS (on) (Ω) 50 Pulse Test 20 10 5 VGS = 10 V 15 V 30 ID = 3 A 2A 1A 20 2 1 0.5 0.05 10 0 8 20 4 12 16 Gate to Source Voltage VGS (V) 0.1 0.2 0.5 1 2 Drain Current ID (A) 5 Static Drain to Source on State Resistance vs. Temperature Static Drain to Source on State Resistance RDS (on) (Ω) Forward Transfer Admittance yfs (S) 20 VGS = 10 V Pulse Test ID = 3 A 5 Forward Transfer Admittance vs. Drain Current VDS = 20 V Pulse Test 2 1 0.5 0.2 0.1 –25°C TC = 25°C 75°C 16 12 2A 1A 8 4 0 –40 40 0 80 120 Case Temperature TC (°C) 160 0.05 0.1 0.5 2 0.2 1 Drain Current ID (A) 5 4 2SK1338 Body to Drain Diode Reverse Recovery Time 5,000 Reverse Recovery Time trr (ns) di/dt = 100 A/µs, Ta = 25°C VGS = 0 Pulse Test 1,000 Ciss Capacitance C (pF) Typical Capacitance vs. Drain to Source Voltage 2,000 1,000 500 100 Coss 200 100 50 2 0.05 0.1 0.2 1 0.5 Reverse Drain Current IDR (A) 10 VGS = 0 f = 1 MHz Crss 5 1 0 20 50 10 30 40 Drain to Source Voltage VDS (V) Dynamic Input Characteristics 1,000 Drain to Source Voltage VDS (V) VDD = 250 V 800 400 V 600 V VGS VDS 400 VDD = 600 V 400 V 250 V 0 8 ID = 2 A 40 8 16 12 20 Gate to Source Voltage VGS (V) Switching Characteristics 500 VGS = 10 V VDD = 30 V PW = 2 µs, duty < 1% • • Switching Time t (ns) 200 100 50 20 10 5 0.05 600 td (off) tf tr td (on) 200 4 0 16 24 32 Gate Charge Qg (nc) 0.1 0.2 0.5 1 2 Drain Current ID (A) 5 5 2SK1338 Reverse Drain Current vs. Source to Drain Voltage 5 Reverse Drain Current IDR (A) Pulse Test 4 3 2 1 5 V, 10 V VGS = 0, –5 V 0 0.8 2.0 0.4 1.2 1.6 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance γS (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 D=1 0.5 0.3 0.1 0.2 TC = 25°C 1.0 0.1 0.05 0.02 ls 1 0.0 t Pu ho 1S e θch–c (t) = γS (t) · θch–c θch–c = 2.50°C/W, TC = 25°C PDM PW D = PW T 0.03 T 100 µ 1m 10 m 100 m Pulse Width PW (s) 0.01 10 µ 1 10 Switching Time Test Circuit Vin Monitor Vout Monitor D.U.T. RL Vout Vin 10 V 50 Ω VDD . = 30 V . td (on) Vin 10% 10% Waveforms 90% 10% 90% td (off) 90% tr tf 6 Unit: mm 11.5 MAX 2.79 ± 0.2 10.16 ± 0.2 9.5 8.0 φ 3.6 -0.08 +0.1 4.44 ± 0.2 1.26 ± 0.15 6.4 +0.2 –0.1 18.5 ± 0.5 15.0 ± 0.3 1.27 2.7 MAX 14.0 ± 0.5 1.5 MAX 7.8 ± 0.5 0.76 ± 0.1 2.54 ± 0.5 2.54 ± 0.5 0.5 ± 0.1 Hitachi Code JEDEC EIAJ Weight (reference value) TO-220AB Conforms Conforms 1.8 g Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. 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Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: (2) 2718-3666 Fax: (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: (2) 735 9218 Fax: (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.