2SK1401A

2SK1401, 2SK1401A Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO-3P D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1401, 2SK1401A Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1401 2SK1401A Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Symbol VDSS Ratings 300 350 ±30 15 60 15 100 150 –55 to +150 Unit V V A A A W °C °C 2 2SK1401, 2SK1401A Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage K1401 K1401A V(BR)GSS I GSS I DSS Symbol Min V(BR)DSS 300 350 ±30 — — Typ — — — — — Max — — — ±10 250 V µA µA I G = ±100 µA, VDS = 0 VGS = ±25 V, VDS = 0 VDS = 240 V, VGS = 0 VDS = 280 V, VGS = 0 VGS(off) RDS(on) 2.0 — — |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 6 — — — — — — — — — — 0.25 0.30 9.5 1250 420 70 15 80 100 55 1.05 370 3.0 0.35 0.40 — — — — — — — — — — S pF pF pF ns ns ns ns V ns I F = 15 A, VGS = 0 I F = 15 A, VGS = 0, diF/dt = 100 A/µs I D = 8 A, VGS = 10 V, RL = 3.75 Ω I D = 8 A, VDS = 10 V *1 VDS = 10 V, VGS = 0, f = 1 MHz V Ω I D = 1 mA, VDS = 10 V I D = 8 A, VGS = 10 V *1 Unit V Test conditions I D = 10 mA, VGS = 0 Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current K1401 K1401A Gate to source cutoff voltage Static drain to source K1401 on state resistance K1401A Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 1. Pulse test 3 2SK1401, 2SK1401A Power vs. Temperature Derating 120 Channel Dissipation Pch (W) Maximum Safe Operation Area 100 10 µs 10 30 Drain Current ID (A) 80 10 3 1.0 0.3 0.1 1 ea ar ) is th S (on PW in D n yR = tio b D 10 ra ed C m pe imit O Ol s( p is 0 µs m s 1 1 er at io n Sh = (T ot Pu °C 40 C lse 25 ) ) Ta = 25°C 2SK1401 2SK1401A 0 50 100 Case Temperature TC (°C) 150 10 100 300 1,000 3 30 Drain to Source Voltage VDS (V) Typical Output Characteristics 20 10 V 16 Drain Current ID (A) Drain Current ID (A) Pulse Test 12 5V 8 4.5 V 4 VGS = 4 V 0 8 20 4 12 16 Drain to Source Voltage VDS (V) 0 8V 6V 20 5.5 V 16 Typical Transfer Characteristics VDS = 20 V Pulse Test 12 8 TC = 75°C 4 25°C –25°C 4 10 2 6 8 Gate to Source Voltage VGS (V) 4 2SK1401, 2SK1401A Drain to Source Saturation Voltage vs. Gate to Source Voltage 20 Drain to Source Saturation Voltage VDS (on) (V) Pulse Test 16 Static Drain to Source on State Resistance RDS (on) (Ω) 10 Pulse Test 5 Static Drain to Source on State Resistance vs. Drain Current 12 ID = 20 A 8 2 1 0.5 VGS = 10 V 15 V 0.2 0.1 0.5 4 10 A 5A 0 8 20 4 12 16 Gate to Source Voltage VGS (V) 1 2 5 20 10 Drain Current ID (A) 50 Static Drain to Source on State Resistance vs. Temperature Static Drain to Source on State Resistance RDS (on) (Ω) VGS = 10 V Pulse Test 0.8 ID = 20 A 10 A 5A 0.6 Forward Transfer Admittance yfs (S) 1.0 50 Forward Transfer Admittance vs. Drain Current VDS = 20 V Pulse Test 20 10 5 TC = 75°C 25°C –25°C 0.4 2 1 0.5 0.2 0.2 0 –40 0 80 120 40 Case Temperature TC (°C) 160 5 0.5 2 1 Drain Current ID (A) 10 20 5 2SK1401, 2SK1401A Body to Drain Diode Reverse Recovery Time 500 Reverse Recovery Time trr (ns) 10,000 VGS = 0 f = 1 MHz Capacitance C (pF) Ciss 1,000 Coss 100 Typical Capacitance vs. Drain to Source Voltage 200 100 50 20 10 5 0.2 Pulse Test di/dt = 100 A/µs, VGS = 0 Ta = 25°C 0.5 2 10 1 5 Reverse Drain Current IDR (A) 20 Crss 5 0 20 50 10 30 40 Drain to Source Voltage VDS (V) Dynamic Input Characteristics 500 Drain to Source Voltage VDS (V) 20 Gate to Source Voltage VGS (V) 500 Switching Characteristics VGS = 10 V, PW = 2 µs . duty < 1%, VDD = 30 V . = td (off) 100 50 20 10 5 0.2 tr td (on) tf 300 VDS VGS 200 V 100 V 12 200 VDD = 100 V 200 V 300 V ID = 15 A 8 100 4 0 0 40 20 60 80 Gate Charge Qg (nc) 100 Switching Time t (ns) 400 VDD = 300 V 16 200 0.5 1 5 2 Drain Current ID (A) 10 20 6 2SK1401, 2SK1401A Reverse Drain Current vs. Source to Drain Voltage 20 Reverse Drain Current IDR (A) Pulse Test 16 12 8 10 V 5V VGS = 0, –5 V 0 0.8 2.0 0.4 1.2 1.6 Source to Drain Voltage VSD (V) 4 Normalized Transient Thermal Impedance γS (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 D=1 0.5 0.3 0.1 0.2 0.1 0.05 0.02 0.01 θch–c (t) = γS (t) · θch–c θch–c = 1.25°C/W, TC = 25°C PDM D = PW T TC = 25°C 1.0 0.03 1S 0.01 10 µ h ul ot P se T 100 µ 1m 10 m Pulse Width PW (s) 100 m PW 1 10 Switching Time Test Circuit Vin Monitor Vout Monitor D.U.T RL Vout Vin 10 V 50 Ω VDD . = 30 V . 10% Vin 10% Waveforms 90% 10% 90% td (off) td (on) 90% tr tf 7 Unit: mm 5.0 ± 0.3 15.6 ± 0.3 1.0 φ3.2 ± 0.2 4.8 ± 0.2 1.5 0.5 14.9 ± 0.2 19.9 ± 0.2 1.6 1.4 Max 2.0 2.8 18.0 ± 0.5 1.0 ± 0.2 2.0 0.6 ± 0.2 3.6 0.9 1.0 5.45 ± 0.5 5.45 ± 0.5 Hitachi Code JEDEC EIAJ Weight (reference value) TO-3P — Conforms 5.0 g 0.3 Cautions 1. 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