2SK1957

2SK1957 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC - DC converter,Motor Control Outline TO-220FM D G 1 23 1. Gate 2. Drain 3. Source S 2SK1957 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings 200 ±20 7 28 7 30 150 –55 to +150 Unit V V A A A W °C °C 2 2SK1957 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol V(BR)DSS V(BR)GSS I GSS Min 200 ±20 — — 2.0 — 3.0 — — — — — — — — — Typ — — — — — 0.33 4.5 700 260 45 20 45 50 35 1.1 150 Max — — ±10 250 4.0 0.45 — — — — — — — — — — Unit V V µA µA V Ω S pF pF pF ns ns ns ns V ns I F = 7 A, VGS = 0 I F = 7 A, VGS = 0, diF / dt = 100 A / µs Test conditions I D = 10 mA, VGS = 0 I G = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS =160 V, VGS = 0 I D = 1 mA, VDS = 10 V ID = 4 A VGS = 10 V*1 ID = 4 A VDS = 10 V*1 VDS = 10 V VGS = 0 f = 1 MHz ID = 4 A VGS = 10 V RL = 7.5Ω Zero gate voltage drain current I DSS Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note 1. Pulse Test VGS(off) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 3 2SK1957 Power vs. Temperature Derating 60 Channel Dissipation Pch (W) Drain Current ID (A) Maximum Safe Operation Area ar (o ea n) 50 30 10 3 1 0.3 0.1 O is pera lim ti ite on d b in y R this DS 10 PW 10 0 s s µ 1 = 10 µ s (1 m s 40 D C O pe m ra tio n (T Sh c ot ) 20 = 25 °C ) Ta = 25 °C 3 10 30 100 300 1000 0 50 100 150 Case Temperature Tc (°C) 0.05 1 Drain to Source Voltage VDS (V) Typical Output Characteristics 10 Drain Current ID (A) 8 6 4 2 10 V 6V 5.5 V Drain Current I D (A) Pulse Test 5V 4.5 V 4V VGS = 3.5 V Typical Transfer Characteristics 10 8 6 4 75°C 2 Tc = 25°C 2 4 6 –25°C Pulse Test VDS = 10 V 0 4 8 12 16 20 0 8 10 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) 4 2SK1957 Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to Source Saturation Voltage VDS (on) (V) 2.0 Static Drain to Source on State Resistance R DS (on) ( Ω) 1.6 1.2 0.8 0.4 5A Static Drain to Source on State Resistance vs. Drain Current 10 5 2 1 0.5 0.2 0.1 0.5 15 V Pulse Test Pulse Test VGS = 10 V 2A I D = 1A 0 4 8 12 16 20 Gate to Source Voltage VGS (V) 1 2 5 10 20 Drain Current I D (A) 50 Static Drain to Source on State Resistance R DS (on) (Ω ) 1.0 0.8 0.6 0.4 0.2 0 –40 Static Drain to Source on State Resistance vs. Temperature Pulse Test ID = 5 A Forward Transfer Admittance |yfs| (S) Forward Transfer Admittance vs. Drain Current 50 20 10 5 2 1 0.5 0.1 Tc = 25°C –25°C 75°C V DS = 10 V Pulse Test 1 A, 2 A 0 40 80 120 160 0.2 0.5 1 2 5 10 Case Temperature TC (°C) Drain Current I D (A) 5 2SK1957 Body to Drain Diode Reverse Recovery Time 500 Reverse Recovery Time t rr (ns) 200 100 50 20 10 5 0.2 0.5 1 2 5 10 20 1 0 10 20 30 40 50 Drain to Source Voltage VDS (V) di/dt = 100 A/µs, VGS = 0 Ta = 25°C 1000 Ciss Capacitance C (pF) Coss Typical Capacitance vs. Drain to Source Voltage 100 10 VGS = 0 f = 1 MHz Crss Reverse Drain Current IDR (A) Dynamic Input Characteristics Drain to Source Voltage VDS (V) 500 400 300 200 100 VDD = 150 V 100 V 50 V ID = 7 A VDS VDD = 150 V 100 V 50 V 8 16 24 32 Gate Charge Qg (nc) Gate to Source Voltage VGS (V) Switching Time t (ns) VGS 20 16 12 8 4 0 40 500 200 100 50 20 10 5 Switching Characteristics VGS = 10 V, VDD = 30 V : PW = 2 µs, duty < 1% = td (off) tf td (on) tr 0 0.1 0.2 0.5 1 2 5 10 Drain Current I D (A) 6 2SK1957 Reverse Drain Current vs. Source to Drain Voltage 10 Reverse Drain Current I DR (A) Pulse Test 8 6 4 2 VGS = 10 V 0, –5 V 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance γS (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 D=1 0.5 0.3 0.1 0.05 0.02 0.01 ulse P hot 1S 1.0 TC = 25°C 0.2 0.1 θch–c (t) = γS (t) · θch–c θch–c = 4.17°C/W, TC = 25°C PDM PW D = PW T 0.03 T 1m 10 m Pulse Width PW (s) 100 m 0.01 10 µ 100 µ 1 10 Switching Time Test Circuit Vin Monitor Waveforms 90% Vout Monitor D.U.T. RL Vin 10 V 50 Ω Vin Vout VDD . = 30 V . 10% 10% 10% 90% td (off) 90% td (on) tr tf 7 10.0 ± 0.3 7.0 ± 0.3 φ 3.2 ± 0.2 2.8 ± 0.2 2.5 ± 0.2 Unit: mm 0.6 5.0 ± 0.3 2.0 ± 0.3 1.2 ± 0.2 1.4 ± 0.2 12.0 ± 0.3 4.45 ± 0.3 2.5 14.0 ± 1.0 0.5 ± 0.1 Hitachi Code JEDEC EIAJ Weight (reference value) TO-220FM — Conforms 1.8 g 0.7 ± 0.1 2.54 ± 0.5 2.54 ± 0.5 17.0 ± 0.3 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. 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Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: (2) 2718-3666 Fax: (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: (2) 735 9218 Fax: (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.