2SK2084

2SK2084(L), 2SK2084(S) Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for Switching regulator, DC - DC converter Outline DPAK-2 4 4 1 1 D G 1. Gate 2. Drain 3. Source 4. Drain S 2 3 23 2SK2084(L), 2SK2084(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings 20 ±20 7 28 7 20 150 –55 to +150 Unit V V A A A W °C °C 2 2SK2084(L), 2SK2084(S) Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol V(BR)DSS V(BR)GSS I GSS Min 20 ±20 — — 1.0 — — Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note 1. Pulse Test |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 5 — — — — — — — — — Typ — — — — — 0.04 0.058 9 800 680 165 15 60 100 80 0.9 80 Max — — ±10 100 2.5 0.053 0.075 — — — — — — — — — — Unit V V µA µA V Ω Ω S pF pF pF ns ns ns ns V ns I F = 7 A, VGS = 0 I F = 7 A, VGS = 0, diF / dt = 20 A / µs Test conditions I D = 10 mA, VGS = 0 I G = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 16 V, VGS = 0 I D = 1 mA, VDS = 10 V ID = 4 A VGS = 10 V*1 ID = 4 A VGS = 4 V*1 ID = 4 A VDS = 10 V*1 VDS = 10 V VGS = 0 f = 1 MHz ID = 4 A VGS = 10 V RL = 5 Ω Zero gate voltage drain current I DSS Gate to source cutoff voltage Static drain to source on state resistance VGS(off) RDS(on) 3 2SK2084(L), 2SK2084(S) Power vs. Temperature Derating 40 Pch (W) I D (A) 50 30 10 3 1 PW Maximum Safe Operation Area 10 µs 100 µs = 30 1 10 ms m s Channel Dissipation 20 10 Drain Current D (1 (T C O sh c = pe ot) Operation in ra 25 ti this area is on °C limited by R DS(on) ) 0.3 Ta = 25 °C 0 50 100 150 Tc (°C) 200 0.1 0.3 1 3 Drain to Source Voltage 10 30 V DS (V) Case Temperature Typical Output Characteristics 20 10 V 6V 4V Pulse Test (A) 20 Typical Transfer Characteristics I D (A) 16 16 V DS = 10 V Pulse Test 3.5 V 12 ID Drain Current 3V 4 VGS = 2.5 V 12 Drain Current 8 8 Tc = 75 °C 25 °C –25 °C 1 2 3 Gate to Source Voltage 4 5 V GS (V) 4 0 2 4 6 Drain to Source Voltage 8 10 V DS (V) 0 4 2SK2084(L), 2SK2084(S) Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to Source On State Resistance R DS(on) ( Ω ) Drain to Source Saturation Voltage V DS(on) (V) 0.5 Pulse Test 0.4 Static Drain to Source State Resistance vs. Drain Current Pulse Test 0.1 V GS = 4 V 10 V 0.2 0.3 I D= 5 A 0.05 0.2 2A 1A 0 2 4 6 Gate to Source Voltage 8 V GS (V) 10 0.1 0.02 0.01 0.1 0.2 0.5 1 2 5 10 Drain Current I D (A) 20 Static Drain to Source on State Resistance R DS(on) ( Ω) Pulse Test 0.16 Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance vs. Temperature 0.20 Forward Transfer Admittance vs. Drain Current 20 10 5 Tc = –25 °C 25 °C 75 °C V DS = 10 V Pulse Test 0.12 V GS = 4 V 5A 1A 2A 1A 2A 5A 0.08 2 1 0.5 0.1 0.04 10 V 0 –40 0 40 80 120 160 Case Temperature Tc (°C) 0.2 0.5 1 2 5 10 Drain Current I D (A) 5 2SK2084(L), 2SK2084(S) Body to Drain Diode Reverse Recovery Time 200 Reverse Recovery Time trr (ns) Typical Capacitance vs. Drain to Source Voltage 10000 100 Capacitance C (pF) 1000 Ciss Coss 50 di / dt = 20 A / µs V GS = 0, Ta = 25 °C 100 Crss VGS = 0 f = 1 MHz 20 10 0.1 10 0.2 0.5 1 2 5 10 Reverse Drain Current I DR (A) 0 4 8 12 16 20 Drain to Source Voltage V DS (V) Dynamic Input Characteristics V DS (V) V GS (V) 50 20 Switching Characteristics 200 t d(off) Switching Time t (ns) 100 tf V GS = 10 V V DD = 20 V PW = 5 µs duty < 1 % tr t d(on) 40 Drain to Source Voltage 30 VDS 12 Gate to Source Voltage V DD = 20 V 10 V 5V VGS 16 50 20 8 20 10 V DD = 20 V 10 V 5V 8 16 24 32 Gate Charge Qg (nc) 4 0 40 0 10 0.1 0.2 0.5 1 Drain Current 2 5 I D (A) 10 6 2SK2084(L), 2SK2084(S) Reverse Drain Current vs. Souece to Drain Voltage 20 Reverse Drain Current I DR (A) Pulse Test 16 10 V 5V 12 V GS = 0, –5 V 8 4 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage V SD (V) Normalized Transient Thermal Impedance vs. Pulse Width 3 Normalized Transient Thermal Impedance γ s (t) Tc = 25°C 1 D=1 0.5 0.2 0.1 0.05 0.02 0.0 1 0.3 0.1 θ ch – c(t) = γ s (t) • θ ch – c θ ch – c = 6.25 °C/W, Tc = 25 °C Pu lse PDM PW T 0.03 1s t ho D= PW T 0.01 10 µ 100 µ 1m 10 m Pulse Width 100 m PW (S) 1 10 7 2SK2084(L), 2SK2084(S) Switching Time Test Circuit Vin Monitor D.U.T. RL Vin Vin 10 V 50 Ω V DD = 20 V Vout 10% 10% 90% td(on) tr 90% td(off) tf 10% Vout Monitor Waveform 90% 8 Unit: mm 6.5 ± 0.5 5.4 ± 0.5 1.7 ± 0.5 2.3 ± 0.2 0.55 ± 0.1 4.7 ± 0.5 16.2 ± 0.5 3.1 ± 0.5 1.15 ± 0.1 0.8 ± 0.1 (0.7) 5.5 ± 0.5 1.2 ± 0.3 0.55 ± 0.1 2.29 ± 0.5 2.29 ± 0.5 0.55 ± 0.1 Hitachi Code JEDEC EIAJ Weight (reference value) DPAK (L)-(2) — — 0.42 g Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. 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Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: (2) 2718-3666 Fax: (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: (2) 735 9218 Fax: (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.