2SK214

2SK213, 2SK214, 2SK215, 2SK216 Silicon N-Channel MOS FET Application High frequency and low frequency power amplifier, high speed switching. Complementary pair with 2SJ76, J77, J78, J79 Features • • • • Suitable for direct mounting High forward transfer admittance Excellent frequency response Enhancement-mode Outline TO-220AB D G 1 2 3 1. Gate 2. Source (Flange) 3. Drain S 2SK213, 2SK214, 2SK215, 2SK216 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK213 2SK214 2SK215 2SK216 Gate to source voltage Drain current Body to drain diode reverse drain current Channel dissipation VGSS ID I DR Pch Pch* Channel temperature Storage temperature Note: 1. Value at TC = 25°C Tch Tstg 1 Symbol VDSX Ratings 140 160 180 200 ±15 500 500 1.75 30 150 –45 to +150 Unit V V mA mA W W °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage 2SK213 2SK214 2SK215 2SK216 Gate to source breakdown voltag Gate to source voltage Drain to source saturation voltage Forward transfer admittance Input capacitance Reverse transfer capacitance Note: 1. Pulse test V(BR)GSS VGS(on) VDS(sat) |yfs| Ciss Crss Symbol V(BR)DSX Min 140 160 180 200 ±15 0.2 — 20 — — Typ — — — — — — — 40 90 2.2 Max — — — — — 1.5 2.0 — — — Unit V V V V V V V mS pF pF I G = ±10 µA, VDS = 0 I D = 10 mA, VDS = 10 V *1 I D = 10 mA, VGD = 0 *1 I D = 10 mA, VDS = 20 V *1 I D = 10 mA, VDS = 10 V, f = 1 MHz Test conditions I D = 1 mA, VGS = –2 V 2 2SK213, 2SK214, 2SK215, 2SK216 Power vs. Temperature Derating 60 Channel Dissipation Pch (W) Drain Current ID (mA) Typical Output Characteristics 500 3.5 TC = 25°C 3.0 400 2.5 300 2.0 200 1.5 100 1.0 VGS = 0.5 V 4 8 16 20 12 Drain to Source Voltage VDS (V) 40 20 0 50 100 Case Temperature TC (°C) 150 0 Typical Output Characteristics 50 TC = 25°C 500 0.8 Drain Current ID (mA) 0.7 0.6 0.5 0.4 10 0.3 0.2 VGS = 0.1V Typical Transfer Characteristics VDS = 20 V Drain Current ID (mA) 30 300 20 200 100 0 60 20 40 80 100 Drain to Source Voltage VDS (V) 0 3 1 2 4 Gate Source Voltage VGS (V) TC =– 40 400 25° C 25 75 5 3 2SK213, 2SK214, 2SK215, 2SK216 Typical Transfer Characteristics 100 80 TC = –25 °C 25 75 Forward Transfer Admittance yfs (mS) Forward Transfer Admittance vs. Drain Current 200 100 50 VDS = 20 V Drain Current ID (mA) 60 20 10 5 TC = 25°C VDS = 20 V 40 20 0 1.2 0.4 0.8 1.6 Gate Source Voltage VGS (V) 2.0 2 5 20 10 50 100 200 Drain Current ID (mA) Forward Transfer Admittance yfs (mS) Forward Transfer Admittance vs. Frequency 500 100 10 TC = 25°C VDS = 20 V ID = 10 mA 1.0 0.1 0.05 5 k 10 k 1M 10 M 100 k Frequency f (HZ) 50 M 4 Unit: mm 11.5 MAX 2.79 ± 0.2 10.16 ± 0.2 9.5 8.0 φ 3.6 -0.08 +0.1 4.44 ± 0.2 1.26 ± 0.15 6.4 +0.2 –0.1 18.5 ± 0.5 15.0 ± 0.3 1.27 2.7 MAX 14.0 ± 0.5 1.5 MAX 7.8 ± 0.5 0.76 ± 0.1 2.54 ± 0.5 2.54 ± 0.5 0.5 ± 0.1 Hitachi Code JEDEC EIAJ Weight (reference value) TO-220AB Conforms Conforms 1.8 g Cautions 1. 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Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: (2) 2718-3666 Fax: (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: (2) 735 9218 Fax: (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.