2SK2554

2SK2554 Silicon N-Channel MOS FET ADE-208-359 D 5th. Edition Application High speed power switching Features • • • • Low on-resistance R DS(on) = 4.5 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline TO-3P D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK2554 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Symbol VDSS VGSS ID I D(pulse)* I DR* I AP * 2 3 3 2 1 Ratings 60 ±20 75 300 75 50 214 150 150 –55 to +150 Unit V V A A A A mJ W °C °C EAR* Pch* Tch Tstg 2 2SK2554 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol V(BR)DSS V(BR)GSS I GSS Min 60 ±20 — — 1.0 — — Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 1. Pulse Test |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 50 — — — — — — — — — Typ — — — — — 4.5 5.8 80 7700 4100 760 60 420 1200 900 0.95 105 Max — — ±10 100 2.0 6 10 — — — — — — — — — — Unit V V µA µA V mΩ mΩ S pF pF pF ns ns ns ns V ns I F = 75 A, VGS = 0 I F = 75 A, VGS = 0 diF / dt = 50 A / µs Test Conditions I D = 10 mA, VGS = 0 I G = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 60 V, VGS = 0 I D = 1 mA, VDS = 10 V I D = 40 A VGS = 10 V*1 I D = 40 A VGS = 4 V*1 I D = 40 A VDS = 10 V*1 VDS = 10 V VGS = 0 f = 1 MHz I D = 40 A VGS = 10 V RL = 0.75 Ω Zero gate voltage drain current I DSS Gate to source cutoff voltage Static drain to source on state resistance VGS(off) RDS(on) 3 2SK2554 Power vs. Temperature Derating 200 Pch (W) I D (A) 500 200 100 50 20 10 5 2 1 0 50 100 150 Tc (°C) 200 0.5 Ta = 25 °C 3 30 0.1 0.3 1 10 100 Drain to Source Voltage V DS (V) Operation in this area is limited by R DS(on) C D Maximum Safe Operation Area 10 PW = 10 0 µs µs 150 1 10 m s m (1 s Channel Dissipation Drain Current n tio ra pe O 100 sh ot ) (T c = ) °C 25 50 Case Temperature 100 Typical Output Characteristics 10 V 5 V 4V 100 3V Pulse Test (A) 80 Typical Transfer Characteristics V DS = 10 V Pulse Test I D (A) 80 60 ID 2.5 V Drain Current Drain Current 60 40 40 Tc = 75°C 25°C –25°C 1 2 3 Gate to Source Voltage 4 5 V GS (V) 20 VGS = 2 V 0 2 4 6 Drain to Source Voltage 8 10 V DS (V) 20 0 4 2SK2554 Drain to Source Saturation Voltage vs. Gate to Source Voltage V DS(on) (V) Pulse Test Drain to Source On State Resistance R DS(on) ( Ω ) 0.5 Static Drain to Source on State Resistance vs. Drain Current 0.5 0.2 0.1 0.05 0.02 0.01 Pulse Test 0.4 Drain to Source Voltage 0.3 I D = 50 A 0.2 20 A 10 A 0 6 2 4 Gate to Source Voltage 8 10 V GS (V) VGS = 4 V 10 V 0.005 0.002 0.001 0.1 0.0005 1 3 10 30 100 300 Drain Current I D (A) 1000 Static Drain to Source on State Resistance R DS(on) ( Ω) 0.02 Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance vs. Temperature Pulse Test 0.016 Forward Transfer Admittance vs. Drain Current 500 200 100 50 20 10 5 2 1 0.5 0.1 0.3 1 3 10 30 100 75 °C 25 °C Tc = –25 °C V DS = 10 V Pulse Test 0.012 I D = 50 A V GS = 4 V 10, 20 A 0.008 10, 20, 50 A 0.004 10 V 0 –40 0 40 80 120 160 Case Temperature Tc (°C) Drain Current I D (A) 5 2SK2554 Body to Drain Diode Reverse Recovery Time 500 Reverse Recovery Time trr (ns) 200 100 50 Typical Capacitance vs. Drain to Source Voltage 100000 Capacitance C (pF) 30000 10000 3000 1000 Ciss Coss 20 10 5 0.1 di / dt = 50 A / µs V GS = 0, Ta = 25 °C 0.3 1 3 10 30 100 Reverse Drain Current I DR (A) Crss 300 100 VGS = 0 f = 1 MHz 0 10 20 30 40 50 Drain to Source Voltage V DS (V) Dynamic Input Characteristics V DS (V) V GS (V) 100 I D = 75 A V DD = 10 V 25 V 50 V 20 10000 3000 Switching Time t (ns) Switching Characteristics 80 16 t d(off) 1000 tf 300 100 tr t d(on) Drain to Source Voltage 60 V DS 12 V GS 40 8 20 V DD = 50 V 25 V 10 V 80 160 240 320 Gate Charge Qg (nc) 4 0 400 Gate to Source Voltage 0 30 V GS = 10 V, V DD = 30 V PW = 5 µs, duty < 1 % 10 0.1 0.3 1 3 10 30 Drain Current I D (A) 100 6 2SK2554 Reverse Drain Current vs. Source to Drain Voltage Repetive Avalanche Energy E AR (mJ) 200 Reverse Drain Current I DR (A) 250 I AP = 50 A V DD = 25 V duty < 0.1 % Rg > 50 Ω Maximun Avalanche Energy vs. Channel Temperature Derating 160 10 V 120 5V 80 V GS = 0, –5 V 200 150 100 40 Pulse Test 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage V SD (V) 50 0 25 50 75 100 125 150 Channel Temperature Tch (°C) Normalized Transient Thermal Impedance vs. Pulse Width 3 Normalized Transient Thermal Impedance γ s (t) Tc = 25°C 1 D=1 0.5 0.3 0.2 0.1 0.1 0.05 θ ch – c(t) = γ s (t) • θ ch – c θ ch – c = 0.83 °C/W, Tc = 25 °C PDM PW T 0.03 0.02 1 lse 0.0 t pu ho 1s D= PW T 0.01 10 µ 100 µ 1m 10 m Pulse Width 100 m PW (S) 1 10 7 2SK2554 Avalanche Test Circuit and Waveform EAR = 1 2 • L • I AP • 2 VDSS VDSS – V DD V DS Monitor L I AP Monitor V (BR)DSS I AP VDD ID V DS Rg Vin 15 V D. U. T 50 Ω 0 VDD Switching Time Test Circuit Vin Monitor D.U.T. RL Vin Vin 10 V 50 Ω V DD = 30 V Vout 10% 10% Vout Monitor Waveform 90% 10% 90% td(off) tf 90% td(on) tr 8 Unit: mm 5.0 ± 0.3 15.6 ± 0.3 1.0 φ3.2 ± 0.2 4.8 ± 0.2 1.5 0.5 14.9 ± 0.2 19.9 ± 0.2 1.6 1.4 Max 2.0 2.8 18.0 ± 0.5 1.0 ± 0.2 2.0 0.6 ± 0.2 3.6 0.9 1.0 5.45 ± 0.5 5.45 ± 0.5 Hitachi Code JEDEC EIAJ Weight (reference value) TO-3P — Conforms 5.0 g 0.3 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. 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Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: (2) 2718-3666 Fax: (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: (2) 735 9218 Fax: (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.