2SK2595

2SK2595 Silicon N-Channel MOS FET UHF Power Amplifier 1st. Edition Features • High power output, High gain, High efficiency PG = 7.8dB, Pout = 37.3dBm, ηD = 50 %min. (f = 836.5MHz) • Compact package capable of surface mounting Outline This Device is sensitive to Elector Static Discharge. An Adequate handling procedure is requested. 2SK2595 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Symbol VDSS VGSS ID I D(pulse)* Pch* Tch Tstg 2 1 Ratings 17 ±10 1.1 5 20 150 –45 to +150 Unit V V A A W °C °C Electrical Characteristics (Ta = 25°C) Item Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Input capacitance Output capacitance Output Power Symbol I DSS I GSS VGS(off) Ciss Coss Pout Min. — — 0.6 — — 37.3 Typ — — — 68 27 38.45 Max. 10 ±5.0 1.3 — — — Unit µA µA V pF pF dBm Test Conditions VDS = 12 V, VGS = 0 VGS = ±10V, VDS = 0 I D = 6mA, VDS = 12V VGS = 5V, VDS = 0 f = 1MHz VDS = 12V, VGS = 0 f = 1MHz VDS = 12V, f = 836.5MHz Pin = 29.5dBm VDS = 12V Pout = 37.3dBm f = 836.5MHz Pin = 29.5dBm Drain Rational ηD 50 60 — % 2 2SK2595 Main Characteristics 3 2SK2595 4 2SK2595 5 2SK2595 Package Dimensions Unit: mm 6 2SK2595 When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi’s permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user’s unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS. 7