2SK3076

2SK3076(L),2SK3076(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-656 (Z) 1st. Edition Jun 1998 Features • • • • Low on-resistance High speed switching Low drive current. Built-in fast recovery diode (trr=120 ns) Outline LDPAK 4 4 D 1 G 1 2 3 2 3 S 1. Gate 2. Drain 3. Source 4. Drain 2SK3076(L),2SK3076(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse) Note1 Ratings 500 ±30 7 28 7 Unit V V A A A W °C °C Body-drain diode reverse drain current I DR Channel dissipation Channel temperature Storage temperature Note: 1. PW ≤ 10µs, duty cycle ≤ 1 % 2. Value at Tc = 25° C Pch Tch Tstg Note2 60 150 –55 to +150 Electrical Characteristics (Ta = 25°C) Item Symbol Min 500 ±30 — — 2.0 — Typ — — — — — 0.7 Max — — ±10 250 3.0 0.9 Unit V V µA µA V Ω Test Conditions I D = 10mA, VGS = 0 I G = ±100µA, VDS = 0 VGS = ±25V, VDS = 0 VDS = 400 V, VGS = 0 I D = 1mA, VDS = 10V I D = 4A, VGS = 10VNote4 I D = 4A, VDS = 10V Note4 VDS = 10V VGS = 0 f = 1MHz I D =4A, VGS = 10V RL = 7.5 Ω Drain to source breakdown voltage V(BR)DSS Gate to source breakdown voltage V(BR)GSS Gate to source leak current Zero gate voltege drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time |yfs| Ciss Coss Crss t d(on) tr t d(off) tf 3.5 — — — — — — — — — 6.0 1100 310 50 15 55 100 48 0.9 120 — — — — — — — — — — S pF pF pF ns ns ns ns V ns I F = 7A, VGS = 0 I F = 7A, VGS = 0 diF/ dt =100A/µs I GSS I DSS VGS(off) RDS(on) Body–drain diode forward voltage VDF Body–drain diode reverse recovery time Note: 4. Pulse test t rr 2 2SK3076(L),2SK3076(S) Main Characteristics Power vs. Temperature Derating 80 Pch (W) I D (A) 100 30 10 3 1 0.3 0.1 0.03 Maximum Safe Operation Area 60 DC PW 10 = 10 10 0 Channel Dissipation Drain Current Op 1m m s( 1s µs µs s er 40 20 ho Operation in c = t) 25 this area is °C limited by R DS(on) ) at ion (T 0 50 100 150 Tc (°C) 200 Case Temperature Ta = 25 °C 0.01 3 30 0.1 0.3 1 10 100 Drain to Source Voltage V DS (V) Typical Output Characteristics 20 10 V I D (A) Typical Transfer Characteristics 20 –25°C (A) 4V 6V 16 16 Pulse Test 12 5V Ta = 25°C ID 12 75°C Drain Current 8 Drain Current 8 4 VGS = 4 V 0 10 20 30 Drain to Source Voltage 40 50 V DS (V) 4 V DS = 20 V Pulse Test 0 2 4 6 Gate to Source Voltage 8 10 V GS (V) 3 2SK3076(L),2SK3076(S) Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current 5 Pulse Test 2 VGS = 10 V 1 0.5 15 V Drain to Source Saturation Voltage V DS(on) (V) Pulse Test 8 10 A 6 4 5A 2 ID=2A 12 4 8 Gate to Source Voltage Drain to Source On State Resistance R DS(on) (Ω ) 10 0.2 0.1 0 16 20 V GS (V) 0.05 0.5 1 2 5 10 20 Drain Current I D (A) 50 Static Drain to Source on State Resistance R DS(on) (Ω ) Forward Transfer Admittance |y fs | (S) Static Drain to Source on State Resistance vs. Temperature 2.0 V GS = 10 V Pulse Test 1.6 I D = 10 A Forward Transfer Admittance vs. Drain Current 500 200 100 50 20 10 5 2 1 0.5 0.1 0.2 1 2 5 0.5 Drain Current I D (A) 10 V DS = 20 V Pulse Test Tc = –25 °C 25 °C 75 °C 1.2 0.8 2, 5 A 0.4 0 –40 0 40 80 120 160 Case Temperature Tc (°C) 4 2SK3076(L),2SK3076(S) Body–Drain Diode Reverse Recovery Time di / dt = 100 A / µs V GS = 0, Ta = 25 °C PulseTest Typical Capacitance vs. Drain to Source Voltage 5000 5000 Reverse Recovery Time trr (ns) Capacitance C (pF) 2000 1000 500 Ciss 1000 VGS = 0 f = 1 MHz Coss 100 200 100 10 Crss 50 0.2 2 5 1 10 0.5 Reverse Drain Current I DR (A) 5 20 0 10 20 30 40 50 Drain to Source Voltage V DS (V) Dynamic Input Characteristics V DS (V) Switching Characteristics V GS (V) 500 ID=7A V DD = 100 V 250 V 400 V V DS V GS 20 500 Switching Time t (ns) 400 16 200 100 50 tf tr t d(on) V GS = 10 V, V DD = 30 V PW = 2 µs, duty < 1 % 0.5 1 2 5 I D (A) 10 20 t d(off) Drain to Source Voltage 300 12 200 V DD = 400 V 250 V 100 V 8 16 24 32 8 Gate to Source Voltage 20 10 5 0.2 100 4 0 40 0 Gate Charge Qg (nc) Drain Current 5 2SK3076(L),2SK3076(S) Reverse Drain Current vs. Source to Drain Voltage 20 Reverse Drain Current I DR (A) 16 10 V V GS = 0, –10 V 12 15 V 8 4 Pulse Test 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage V SD (V) Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermao Impedance γ s (t) 3 Tc = 25°C 1 D=1 0.5 0.3 0.2 0.1 0.1 0.05 θ ch – c(t) = γ s (t) • θ ch – c θ ch – c = 2.08 °C/W, Tc = 25 °C PDM PW T 0.03 0.02 1 lse 0.0 t pu o h 1s D= PW T 0.01 10 µ 100 µ 1m 10 m 100 m Pulse Width PW (S) 1 10 6 2SK3076(L),2SK3076(S) Switching Time Test Circuit Vin Monitor D.U.T. RL Vin Vin 10 V 50 Ω V DD = 30 V Vout 10% 10% 90% td(on) tr 90% td(off) tf 10% Vout Monitor Waveform 90% 7 2SK3076(L),2SK3076(S) Package Dimensions Unit: mm (1.4) 10.2 ± 0.3 4.44 ± 0.2 1.3 ± 0.2 11.3 ± 0.5 8.6 ± 0.3 10.0 +0.3 –0.5 (1.4) 10.2 ± 0.3 4.44 ± 0.2 1.3 ± 0.2 (1.5) 11.0 ± 0.5 (1.5) 0.76 ± 0.1 (1.5) 8.6 ± 0.3 10.0 +0.3 –0.5 1.2 ± 0.2 0.86 +0.2 –0.1 1.27 ± 0.2 2.59 ± 0.2 1.27 ± 0.2 0.4 ± 0.1 1.2 ± 0.2 2.54 ± 0.5 0.86 +0.2 –0.1 2.54 ± 0.5 3.0 +0.3 –0.5 0.1 +0.2 –0.1 2.59 ± 0.2 0.4 ± 0.1 2.54 ± 0.5 2.54 ± 0.5 L type S type Hitachi Code EIAJ JEDEC LDPAK — — 8 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: (408) 433-1990 Fax: (408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher Stra§e 3 D-85622 Feldkirchen, Munich Germany Tel: (89) 9 9180-0 Fax: (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: (1628) 585000 Fax: (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: (2) 2718-3666 Fax: (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: (2) 735 9218 Fax: (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.