2SK3566

2SK3566 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIV) 2SK3566 Switching Regulator Applications • • • • Low drain-source ON resistance: RDS (ON) = 5.6Ω (typ.) High forward transfer admittance: |Yfs| = 2.0 S (typ.) Low leakage current: IDSS = 100 μA (VDS = 720 V) Enhancement-mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage DC Drain current (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 900 900 ±30 2.5 7.5 40 216 2.5 4 150 -55~150 A W mJ A mJ °C °C 1: Gate 2: Drain 3: Source Unit V V V Pulse (t = 1 ms) (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA ― SC-67 2-10U1B Weight : 1.7 g (typ.) Thermal Characteristics Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 3.125 62.5 Unit °C/W °C/W 1 2 Note 1: Please use devices on conditions that the channel temperature is below 150°C. Note 2: VDD = 90 V, Tch = 25°C, L = 63.4 mH, IAR = 2.5 A, RG = 25 Ω Note 3: Repetitive rating: Pulse width limited by maximum channel temperature This transistor is an electrostatic sensitive device. Please handle with caution. 3 1 2005-01-24 2SK3566 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Gate-source breakdown voltage Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge Gate-source charge Gate-drain charge tf toff Qg Qgs Qgd VDD ∼ 400 V, VGS = 10 V, ID =2.5 A − Duty < 1%, tw = 10 µs = Symbol IGSS V (BR) GSS IDSS V (BR) DSS Vth RDS (ON) Test Condition VGS = ±25 V, VDS = 0 V IG = ±10 µA, VGS = 0 V VDS = 720 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 1.5 A VDS = 20 V, ID = 1.5 A Min Typ. Max Unit ⎯ ±30 ⎯ 900 2.0 ⎯ ⎯ ⎯ ⎯ ⎯ 5.6 2.0 470 10 50 20 60 30 100 12 7 5 ±10 ⎯ 100 µA V µA V V ⎯ 4.0 6.4 ⎯ 1.0 Ω S ⎪Yfs⎪ Ciss Crss Coss tr ton ⎯ ⎯ ⎯ ⎯ VDS = 25 V, VGS = 0 V, f = 1 MHz ⎯ pF ⎯ 10 V VGS 0V 50 Ω ID = 1.5 A VOUT ⎯ ⎯ ⎯ ns ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ RL = 133 Ω VDD ∼ 200 V − ⎯ ⎯ ⎯ ⎯ ⎯ nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Continuous drain reverse current (Note 1) Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge (Note 1) Symbol IDR IDRP VDSF trr Qrr Test Condition Min Typ. Max 2.5 7.5 Unit A A V ns ⎯ ⎯ IDR =2.5 A, VGS = 0 V IDR = 2.5 A, VGS = 0 V, dIDR/dt = 100 A/µs ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 720 3.6 −1.7 ⎯ ⎯ µC Marking K3566 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2005-01-24 2SK3566 ID – VDS 2 COMMON SOURCE Tc = 25°C PULSE TEST 8 6 3 5.5 5.25 COMMON SOURCE Tc = 25°C PULSE TEST ID – VDS 10 6 8 5.5 DRAIN CURRENT ID (A) 1.6 DRAIN CURRENT ID (A) 10 2.5 2 5.25 1.5 5 1 4.75 0.5 4. 5 VGS = 4 V 1.2 5 0.8 4.75 4. 5 VGS = 4 V 0.4 0 0 4 8 12 16 20 24 0 0 12 24 36 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V) ID – VGS VDS – VGS VDS (V) 5 COMMON SOURCE 40 COMMON SOURCE Tc = 25℃ 30 PULSE TEST DRAIN CURRENT ID (A) 4 VDS = 20 V PULSE TEST 3 DRAIN-SOURCE VOLTAGE 20 ID = 2.5 A 2 Tc = −55°C 25 1 100 10 1.5 0.8 0 0 4 8 12 16 20 0 0 2 4 6 8 10 12 GATE-SOURCE VOLTAGE VGS (V) GATE-SOURCE VOLTAGE VGS (V) ⎪Yfs⎪ – ID FORWARD TRANSFER ADMITTANCE ⎪Yfs⎪ (S) 10 100 RDS (ON) – ID DRAIN-SOURCE ON RESISTANCE RDS (ON) (Ω) COMMON SOURCE Tc = 25°C PULSE TEST 1 Tc = −55°C 25 100 1 10 VGS = 10 V 0.1 COMMON SOURCE VDS = 20 V 0.01 0.01 PULSE TEST 0.1 1 10 1 0.01 0.1 1 10 DRAIN CURRENT ID (A) DRAIN CURRENT ID (A) 3 2005-01-24 2SK3566 RDS (ON) – Tc 20 10 IDR – VDS DRAIN-SOURCE ON RESISTANCE RDS (ON) ( Ω) DRAIN REVERSE CURRENT IDR (A) COMMON SOURCE PULSE TEST 16 COMMON SOURCE 5 3 Tc = 25°C PULSE TEST 12 ID = 1.5A 1 0.5 0.3 1 10 0.1 0 3 −0.4 VGS = 0V −0.8 −1.2 −1.6 8 VGS = 10 V 4 0.8 0 −80 −40 0 40 80 120 160 CASE TEMPERATURE Tc (°C) DRAIN-SOURCE VOLTAGE VDS (V) CAPACITANCE – VDS 1000 5 Vth – Tc GATE THRESHOLD VOLTAGE Vth (V) (pF) Ciss 100 Coss 4 CAPACITANCE C 3 2 COMMON SOURCE 1 VDS = 10 V ID = 1 mA PULSE TEST 0 −80 −40 0 40 80 120 160 10 COMMON SOURCE VGS = 0 V f = 1 MHz Tc = 25°C 1 0.1 1 10 100 Crss DRAIN-SOURCE VOLTAGE VDS (V) CASE TEMPERATURE Tc (°C) PD – Tc DYNAMIC INPUT / OUTPUT CHARACTERISTICS VDS (V) 40 400 VDS 200 16 DRAIN-SOURCE VOLTAGE 30 300 VDD = 100 V 12 VGS 20 200 400 COMMON SOURCE ID = 2.5 A Tc = 25°C PULSE TEST 8 10 100 4 0 0 0 40 80 120 160 200 0 5 10 15 0 20 CASE TEMPERATURE Tc (°C) TOTAL GATE CHARGE Qg (nC) 4 2005-01-24 GATE-SOURCE VOLTAGE VGS (V) 50 500 20 DRAIN POWER DISSIPATION PD (W) 2SK3566 rth – tw NORMALIZED TRANSIENT THERMAL IMPEDANCE rth (t)/Rth (ch-c) 10 1 Duty=0.5 0.2 0.1 0.1 0.05 0.02 SINGLE PULSE 0.01 PDM t T Duty = t= t/T Duty /T Rth th (ch-c) 3.125°C/W R (ch-c) = = 1.25°C/W 0.01 0.001 10μ 100μ 1ｍ 10ｍ 100ｍ 1 10 PULSE WIDTH tw (s) SAFE OPERATING AREA 100 250 EAS – Tch DRAIN CURRENT ID (A) 10 ID max (PULSED) * ID max (CONTINUOUS) * 1 ms * DC OPERATION Tc = 25°C 100 µs * AVALANCHE ENERGY EAS (mJ) 200 150 1 100 0.1 ※ SINGLE NONREPETITIVE PULSE Tc=25℃ 50 CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE. 0.01 1 VDSS max 100 1000 10000 0 25 50 75 100 125 150 10 DRAIN-SOURCE VOLTAGE VDS (V) CHANNEL TEMPERATURE (INITIAL) Tch (°C) BVDSS IAR VDD TEST CIRCUIT RG = 2 5 Ω VDD = 90 V, L = 43.4mH VDS 15 V −15 V WAVE FORM Ε AS = ⎛ ⎞ 1 B VDSS ⎟ ⋅ L ⋅ I2 ⋅ ⎜ ⎜B 2 − VDD ⎟ ⎝ VDSS ⎠ 5 2005-01-24 2SK3566 RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 030619EAA • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 6 2005-01-24