2SK522

2SK522 Silicon N-Channel Junction FET Application VHF amplifier, Mixer, local oscillator Outline SPAK 1 23 1. Gate 2. Source 3. Drain 2SK522 Absolute Maximum Ratings (Ta = 25°C) Item Gate to drain voltage Gate current Drain current Channel power dissipation Channel temperature Storage temperature Symbol VGDO IG ID Pch Tch Tstg Ratings –30 10 20 200 150 –55 to +150 Unit V mA mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Gate to drain breakdown voltage Gate cutoff current Drain current Gate to source cutoff voltage Forward transfer admittance Input capacitance Reverse transfer capacitance Power gain Noise figure Note: Drain I DSS D 4 to 8 E 6 to 10 Symbol V(BR)GDO I GSS I DSS* 1 Min –30 — 4 — 8 — — 20 — F 10 to 20 Typ — — — — 10 6.8 0.1 27 1.7 Max — –10 20 –3 — — — — 2.5 Unit V nA mA V mS pF pF dB dB Test conditions I G = –100 µA, IS = 0 VGS = –0.5 V, VDS = 0 VDS = 5 V, VGS = 0 VDS = 5 V, ID = 10 µA VDS = 5 V, VGS = 0, f = 1 kHz VDS = 5 V, VGS = 0, f = 1 MHz VGS(off) y fs Ciss Crss PG NF VDS = 5 V, VGS = 0, f = 100 MHz 1. The 2SK522 is grouped by I DSS as follows. 2 2SK522 Maximum Channel Power Dissipation Curve Channel Power Dissipation Pch (mW) 300 Drain Current ID (mA) Typical Output Characteristics (1) 10 VGS = 0 8 –0.2 V 6 –0.4 4 –0.6 2 –0.8 –1.0 Pc h = 20 200 0 m W 100 0 50 100 150 Ambient Temperature Ta (°C) 0 10 20 30 40 Drain to Source Voltage VDS (V) 50 Typical Output Characteristics (2) 10 VGS = 0 Drain Current ID (mA) Drain Current ID (mA) 8 –0.2 V 6 –0.4 4 –0.6 2 –0.8 –1.0 15 Typical Transfer Characteristics VDS = 5 V 10 F E 5 D 0 –3.0 0 1 2 3 4 Drain to Source Voltage VDS (V) 5 –2.0 –1.0 Gate to Source Voltage VGS (V) 0 3 2SK522 Forward Transfer Admittance vs. Drain to Source Voltage Forward Transfer Admittance yfs (mS) Ta = –25°C 25°C 10 75°C Forward Transfer Admittance yfs (mS) 15 50 20 10 5 2 1.0 0.5 0.2 Forward Transfer Admittance vs. Drain Current 5 VGS = 0 f = 1 kHz VDS = 5 V f = 1 kHz 0 5 10 Drain to Source Voltage VDS (V) 15 0.5 1.0 2 5 10 Drain Current ID (mA) 20 Reverse Transfer Capacitance Crss (pF) Input Capacitance vs. Drain to Source Voltage 20 Input Capacitance Ciss (pF) VGS = 0 f = 1 MHz 10 Reverse Transfer Capacitance vs. Drain to Source Voltage 5 2 1.0 0.5 VGS = 0 f = 1 MHz 5 0.2 0.1 0.05 0.1 2 0.1 0.5 1.0 2 5 10 0.2 Drain to Source Voltage VDS (V) 0.2 0.5 1.0 2 5 Drain to Source Voltage VDS (V) 10 4 2SK522 Output Capacitance vs. Drain to Source Voltage 200 Output Capacitance Coss (pF) 100 50 Power Gain PG (dB) VGS = 0 f = 1 MHz 20 VGS = 0 f = 100 MHz 30 Power Gain vs. Drain to Source Voltage 20 10 5 10 2 0.1 0.2 0.5 1.0 2 5 10 Drain to Source Voltage VDS (V) 0 5 10 Drain to Source Voltage VDS (V) 15 Noise Figure vs. Drain to Source Voltage 8 Noise Figure NF (dB) 6 VGS = 0 f = 100 MHz 4 2 0 4 8 12 16 Drain to Source Voltage VDS (V) 5 2SK522 Power Gain and Noise Figure Test Circuit 5.4 SG Output Impedance 50 C1 S.G. Shield D.U.T. L1 C2 3.0 L2 4,700 50 1,000 V.V VDD Unit R : Ω C : pF C1, C2 : 0 to 30pF Max Variable Air L1 : 3.5 T φ1 mmφ Copper Ribbon, Tin plated 10 mm Inside dia. L2 : 4.5 T φ1 mmφ Copper Ribbon, Tin plated 10 mm Inside dia. 6 4.2 Max 1.8 Max 3.2 Max 2.2 Max Unit: mm 0.45 ± 0.1 14.5 Min 0.6 0.6 Max 0.4 ± 0.1 1.27 1.27 2.54 Hitachi Code JEDEC EIAJ Weight (reference value) SPAK — — 0.10 g Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. 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Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: (2) 2718-3666 Fax: (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: (2) 735 9218 Fax: (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.