2SK971

2SK971 Silicon N-Channel MOS FET Application TO–220AB High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device – Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive 2 1 2 3 1 1. Gate 2. Drain (Flange) 3. Source 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse)* IDR Pch** Tch Tstg Ratings 60 ±20 15 60 15 40 150 –55 to +150 Unit V V A A A W °C °C ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at TC = 25 °C 2SK971 Table 2 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) Min 60 Typ — Max — Unit V Test conditions ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 50 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 8 A, VGS = 10 V * ——————————————————————————————————————————— ——————————————————————————————————————————— ±20 — — V ——————————————————————————————————————————— — — 1.0 — — — — 0.055 0.075 Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time * Pulse Test |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr 7 — — — — — — — — 12 860 450 140 10 70 180 120 1.3 ±10 250 2.0 0.065 0.095 — — — — — — — — — S pF pF pF ns ns ns ns V IF = 15 A, VGS = 0 IF = 15 A, VGS = 0, diF/dt = 50 A/µs ID = 8 A, VGS = 10 V, RL = 3.75 Ω µA µA V Ω ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————— ——————————– ID = 8 A, VGS = 4 V * ID = 8 A, VDS = 10 V * VDS = 10 V, VGS = 0, f = 1 MHz ——————————————————————————————————————————— ——————————————————————————————————————————— ———————————————————————————————— ———————————————————————————————— ——————————————————————————————————————————— ———————————————————————————————— ———————————————————————————————— ———————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— — 135 — ns ——————————————————————————————————————————— 2SK971 Power vs. Temperature Derating 60 Channel Dissipation Pch (W) Maximum Safe Operation Area 500 300 100 ar ea Drain Current ID (A) 10 O is pe lim rat ite ion d in by th R is (o n) 40 S 30 10 3 1.0 10 µs DC 0 O µs PW D 1 n (1 s m ms 10 = pe ra 20 tio (T Sh ot) °C ) 25 C = Ta = 25°C 0.3 1.0 3 10 30 100 0 50 100 150 0.5 0.1 Case Temperature TC (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics 20 10 V 4V 5V Pulse Test 3.5 V 20 16 Drain Current ID (A) Typical Transfer Characteristics 16 Drain Current ID (A) VDS = 10 V Pulse Test 12 3.0 V 8 VGS = 2.5 V 12 8 4 4 75°C –25°C TC= 25°C 5 0 6 2 4 8 10 Drain to Source Voltage VDS (V) 0 3 1 2 4 Gate to Source Voltage VGS (V) 2SK971 Drain to Source Saturation Voltage vs. Gate to Source Voltage 2.0 Drain to Source Saturation Voltage VDS (on) (V) 1.6 20 A Static Drain to Source on State Resistance RDS (on) (Ω) Pulse Test 0.5 0.2 0.1 Static Drain to Source on State Resistance vs. Drain Current Pulse Test VGS = 4 V 1.2 10 V 0.05 0.8 10 A 0.4 ID = 5 A 0.02 0.01 0.005 1 2 5 20 50 10 Drain Current ID (A) 100 0 6 2 4 8 10 Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Temperature Static Drain to Source on State Resistance RDS (on) (Ω) Pulse Test Forward Transfer Admittance yfs (S) 0.20 50 20 10 5 Forward Transfer Admittance vs. Drain Current VDS = 10 V Pulse Test 0.16 ID = 10 A 0.12 VGS = 4 V 5A 10 A 20 A 5A –25°C TC = 25°C 75°C 0.08 2 1.0 0.5 0.2 0.04 VGS = 10 V 0 –40 0 40 120 80 Case Temperature TC (°C) 160 0.5 1.0 10 5 2 Drain Current ID (A) 20 2SK971 Body to Drain Diode Reverse Recovery Time 1000 Reverse Recovery Time trr (ns) 500 di/dt = 50 A/µs, Ta = 25°C VGS = 0 Pulse Test Capacitance C (pF) 10000 3000 1000 300 100 30 10 2 1.0 5 10 20 Reverse Drain Current IDR (A) 50 0 Typical Capacitance vs. Drain to Source Voltage VGS = 0 f = 1MHz 200 100 50 Ciss Coss Crss 20 10 0.5 10 20 50 30 40 Drain to Source Voltage VDS (V) Dynamic Input Characteristics 100 Drain to Source Voltage VDS (V) 80 20 Gate to Source Voltage VGS (V) 16 500 Switching Characteristics VDD = 50 V 25 V 10 V Switching Time t (ns) 200 100 50 td (off) tf 60 VDS 12 40 20 VGS VDD = 50 V ID = 15 A 25 V 10 V 8 16 24 32 Gate Charge Qg (nc) 8 4 tr 20 10 5 0.2 VGS = 10 V PW = 2µs, duty < 1 % td (on) 0 0 40 0.5 10 1.0 5 2 Drain Current ID (A) 20 2SK971 Reverse Drain Current vs. Source to Drain Voltage 20 Reverse Drain Current IDR (A) 16 Pulse Test 12 10 V 15 V 5V VGS = 0, – 5 V 8 4 0 0.4 1.2 0.8 2.0 1.6 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 D=1 0.5 0.3 0.1 TC = 25°C 1.0 0.2 0.1 0.05 0.02 θch–c (t) = γS (t) · θch–c θch–c = 3.13°C/W, TC = 25°C PDM PW 1 D = PW T 10 0.03 0.01 10 µ e 1 uls 0.0 ot P h 1S T 1m 10 m Pulse Width PW (s) 100 m 100 µ 2SK971 Switching Time Test Circuit Vin Monitor Wavewforms 90 % Vout Monitor D.U.T RL Vin Vout 10 % 10 % 90 % tr 90 % td (off) 10 % 50 Ω Vin = 10 V . VDD = 30 V . td (on) tf