2SK974S

2SK974 L , 2SK974 S Silicon N-Channel MOS FET Application DPAK-1 4 4 High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device – Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive 2, 4 12 3 12 3 S type L type 1 1. Gate 2. Drain 3. Source 4. Drain 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature * ** PW ≤ 10 µs, duty cycle ≤ 1 % Value at TC = 25 °C Symbol VDSS VGSS ID ID(peak)* IDR Pch** Tch Tstg Ratings 60 ±20 3 12 3 20 150 –55 to +150 Unit V V A A A W °C °C ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— 2SK974 L , 2SK974 S Table 2 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) Min 60 Typ — Max — Unit V Test conditions ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 50 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 2 A, VGS = 10 V * ——————————————————————————————————————————— ——————————————————————————————————————————— ±20 — — V ——————————————————————————————————————————— — — 1.0 — — — — 0.15 0.20 Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time |yfs| Ciss Coss Crss td(on) tr td(off) 2.4 — — — — — — 4.0 400 230 60 5 25 180 ±10 100 2.0 0.18 0.25 — — — — — — — S pF pF pF ns ns ns ID = 2 A, VGS = 10 V, RL = 15 Ω µA µA V Ω ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————— ——————————– ID = 2 A, VGS = 4 V * ID = 2 A, VDS = 10 V * VDS = 10 V, VGS = 0, f = 1 MHz ——————————————————————————————————————————— ——————————————————————————————————————————— ———————————————————————————————— ———————————————————————————————— ——————————————————————————————————————————— ———————————————————————————————— ———————————————————————————————— ———————————————————————————————— Fall time tf — 75 — ns ——————————————————————————————————————————— Body to drain diode forward voltage Body to drain diode reverse recovery time * Pulse Test VDF trr — 0.9 — V IF = 3 A, VGS = 0 IF = 3 A, VGS = 0, diF/dt = 50 A/µs ——————————————————————————————————————————— — 85 — ns ——————————————————————————————————————————— 2SK974 L , 2SK974 S Power vs. Temperature Derating 30 Channel Dissipation Pch (W) 100 30 Drain Current ID (A) 20 10 3 1.0 0.3 0 50 100 Case Temperature TC (°C) 150 Maximum Safe Operation Area is ) th (on in DS n io R at y er ed b p O mit li e ar a is 10 µs PW 10 = 10 0 µs 1 s m DC 10 Ta = 25°C m Op s (1 er Sh (T at o C = ion t) 25 °C ) 0.1 0.1 0.3 30 100 1.0 3 10 Drain to Source Voltage VDS (V) Typical Output Characteristics 10 10 V 5V 4V Drain Current ID (A) 3.5 V 6 3V Pulse Test 10 Typical Transfer Characteristics 8 Drain Current ID (A) 8 VDS = 10 V Pulse Test 6 4 4 –25°C TC= 25°C 2 2.5 V VGS = 2 V 2 75°C 0 6 2 4 8 10 Drain to Source Voltage VDS (V) 0 3 1 2 4 Gate to Source Voltage VGS (V) 5 2SK974 L , 2SK974 S Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance RDS (on) (Ω) 1.0 Drain to Source Saturation Voltage VDS (on) (V) 0.8 Pulse Test 5A 5 2 1.0 0.5 0.2 0.1 0.05 0.2 Static Drain to Source on State Resistance vs. Drain Current Pulse Test 0.6 0.4 2A 0.2 ID = 1 A VGS = 4 V 10 V 0 6 2 4 8 10 Gate to Source Voltage VGS (V) 0.5 1.0 2 5 10 Drain Current ID (A) 20 Static Drain to Source on State Resistance vs. Temperature Static Drain to Source on State Resistance RDS (on) (Ω) Forward Transfer Admittance  yfs  (S) 0.5 Pulse Test 10 Forward Transfer Admittance vs. Drain Current VDS = 10 V 5 Pulse Test 2 1.0 0.5 –25°C TC = 25°C 0.4 ID = 5 A 1 A, 2 A VGS = 4 V 5A 1 A, 2 A 0.1 VGS = 10 V 0.3 75°C 0.2 0.2 0.1 0.05 0 –40 0 40 120 80 Case Temperature TC (°C) 160 0.1 2 0.2 0.5 1.0 Drain Current ID (A) 5 2SK974 L , 2SK974 S Body to Drain Diode Reverse Recovery Time 500 Reverse Recovery Time trr (ns) di/dt = 50 A/µs, Ta = 25°C VGS = 0 Pulse Test 10000 3000 Capacitance C (pF) 1000 Typical Capacitance vs. Drain to Source Voltage VGS = 0 f = 1 MHz 200 100 50 Ciss 300 100 Crss 30 10 Coss 20 10 5 0.2 0.5 1.0 2 5 10 Reverse Drain Current IDR (A) 20 0 10 20 30 40 50 Drain to Source Voltage VDS (V) Dynamic Input Characteristics 100 Drain to Source Voltage VDS (V) 80 20 Gate to Source Voltage VGS (V) 16 500 Switching Characteristics td (off) 200 Switching Time t (ns) 100 tf VDD = 50 V 25 V 10 V 60 VDS 40 20 25 V 10 V 0 4 VDD = 50 V 12 VGS ID = 3 A 8 4 50 VGS = 10 V PW = 2 µs, duty < 1 % 20 10 5 0.1 tr 8 12 16 Gate Charge Qg (nc) 0 20 td (on) 0.2 0.5 1.0 2 Drain Current ID (A) 5 10 2SK974 L , 2SK974 S Reverse Drain Current vs. Source to Drain Voltage 10 Reverse Drain Current IDR (A) 8 Pulse Test 6 10 V 15 V 4 5V 2 VGS = 0, –5 V 0 0.8 0.4 1.2 2.0 1.6 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 1.0 D=1 0.5 0.3 0.1 TC = 25°C 0.2 0.1 0.05 0.02 lse 0.01 ot Pu h 1S θch–c (t) = γs (t) · θch–c θch–c = 6.25°C/W, TC = 25°C PDM PW T 1m 10 m Pulse Width PW (s) 100 m 1 D =PW T 0.03 0.01 10 µ 100µ 10 2SK974 L , 2SK974 S Switching Time Test Circuit Vin Monitor Wavewforms 90 % Vout Monitor D.U.T RL Vin Vout 10 % 10 % 90 % tr 90 % td (off) 10 % 50 Ω Vin = 10 V . VDD = 30 V . td (on) tf