3SK295

3SK295 Silicon N-Channel Dual Gate MOS FET ADE-208-387 1st. Edition Application UHF RF amplifier Features • Low noise figure. NF = 2.0 dB typ. at f = 900 MHz • Capable of low voltage operation Outline MPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain 3SK295 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate 1 to source voltage Gate 2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 12 ±8 ±8 25 150 150 –55 to +150 Unit V V V mA mW °C °C Attention: This device is very sensitive to electro static discharge. It is recommended to adopt appropriate cautions when handling this transistor. 2 3SK295 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate 1 to source breakdown voltage Gate 2 to source breakdown voltage Gate 1 cutoff current Gate 2 cutoff current Drain current Symbol V(BR)DSX V(BR)G1SS V(BR) G2SS I G1SS I G2SS I DS(on) Min 12 ±8 ±8 — — 0.5 –0.5 0 16 1.2 0.6 — 16 — Typ — — — — — — — — 20.8 1.5 0.9 0.01 19.5 2.0 Max — — — ±100 ±100 10 +0.5 +1.0 — 2.2 1.2 0.03 — 3 Unit V V V nA nA mA V V mS pF pF pF dB dB VDS = 4 V, VG2S = 3V, I D = 10 mA, f = 900 MHz Test conditions I D = 200 µA , VG1S = –3 V, VG2S = –3 V I G1 = ±10 µA, VG2S = VDS = 0 I G2 = ±10 µA, VG1S = VDS = 0 VG1S = ±6 V, VG2S = VDS = 0 VG2S = ±6 V, VG1S = VDS = 0 VDS = 6 V, VG1S = 0.5V, VG2S = 3 V VDS = 10 V, VG2S = 3V, I D = 100 µA VDS = 10 V, VG1S = 3V, I D = 100 µA VDS = 6 V, VG2S = 3V, I D = 10 mA, f = 1 kHz VDS = 6 V, VG2S = 3V, I D = 10 mA, f = 1 MHz Gate 1 to source cutoff voltage VG1S(off) Gate 2 to source cutoff voltage VG2S(off) Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Power gain Noise figure Note: Marking is “ZQ–” |yfs| Ciss Coss Crss PG NF 3 3SK295 Maximum Channel Power Dissipation Curve Pch (mW) 200 (mA) Typical Output Characteristics 20 VG2S = 3 V 16 1.0 V ID 12 0.8 V 8 0.6 V 4 VG1S = 0.4 V 2 4 6 8 10 Drain to source voltage VDS (V) 100 Drain current 1.2 V Pulse test 150 Channel Power Dissipation 50 0 50 100 150 200 Ambient Temperature Ta (°C) 0 1.5 V 12 Drain current I D (mA) I D (mA) Drain Current vs. Gate1 to Source Voltage 20 3.0 V V DS = 6 V 2.0 V Pulse test 2.5 V 16 Drain Current vs. Gate2 to Source Voltage 20 2.0 V V DS = 6 V 1.5 V 16 1.0 V 12 Pulse test Drain current 8 1.0 V 4 VG2S = 0.5 V 0 1 2 3 4 5 8 VG1S = 0.5 V 4 0 1 2 3 4 5 Gate1 to source voltage VG1S (V) Gate2 to source voltage VG2S (V) 4 3SK295 Forward Transfer Admittance vs. Gate1 to Source Voltage Forward transfer admittance |y fs | (mS) 30 VDS = 6 V f = 1 kHz V G2S = 3.0 V 18 2.5 V Power gain 2.0 V 1.5 V 6 0.5 V 0 0.4 0.8 1.2 1.6 2.0 1.0 V Power Gain vs. Drain Current 25 PG (dB) 24 20 15 12 10 VDS = 4 V VG2S = 3 V f = 900 MHz 2 5 10 I D (mA) 20 5 0 1 Gate1 to source voltage VG1S (V) Drain current Noise Figure vs. Drain Current 5 NF (dB) PG (dB) Power gain VDS = 4 V VG2S = 3 V f = 900 MHz 25 Power Gain vs. Drain to Source Voltage 4 20 3 15 Noise figure 2 10 VG2S = 3 V I D = 10 mA f = 900 MHz 2 4 6 8 VDS 10 (V) 1 0 1 5 2 5 10 I D (mA) 20 0 Drain current Drain to source voltage 5 3SK295 Noise Figure vs. Drain to Source Voltage 5 NF (dB) Noise figure 4 3 2 VG2S = 3 V I D = 10 mA f = 900 MHz 2 4 6 8 VDS 10 (V) 1 0 Drain to source voltage 6 3SK295 S11 Parameter vs. Frequency .8 .6 .4 3 .2 4 5 10 0 .2 .4 .6 .8 1.0 1.5 2 3 45 10 –10 –.2 –5 –4 –3 –.4 –.6 –.8 –1.5 –2 –120° –1 –90° 180° 0° 150° 30° 1 1.5 2 S21 Parameter vs. Frequency 90° 120° Scale: 0.5 / div. 60° –150° –30° –60° Condition: V DS = 4 V , V G2S = 3 V I D = 10 mA , Zo = 50 Ω 100 to 1000 MHz (50 MHz step) Condition: V DS = 4 V , V G2S = 3 V I D = 10 mA , Zo = 50 Ω 100 to 1000 MHz (50 MHz step) S12 Parameter vs. Frequency 90° 120° S22 Parameter vs. Frequency .8 .6 .4 3 1 1.5 2 30° .2 Scale: 0.002/ div. 60° 150° 4 5 10 180° 0° 0 .2 .4 .6 .8 1.0 1.5 2 3 45 10 –10 –.2 –150° –30° –.4 –120° –60° –90° –.6 –.8 –1.5 –2 –1 –5 –4 –3 Condition: V DS = 4 V , V G2S = 3 V I D = 10 mA , Zo = 50 Ω 100 to 1000 MHz (50 MHz step) Condition: V DS = 4 V , V G2S = 3 V I D = 10 mA , Zo = 50 Ω 100 to 1000 MHz (50 MHz step) 7 3SK295 S Parameter (VDS = 4 V, VG2S = 3 V, ID = 10 mA, ZO = 50 ) Freq. (MHz) 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 S11 MAG. 0.999 0.998 0.992 0.988 0.985 0.976 0.971 0.964 0.961 0.951 0.949 0.935 0.933 0.923 0.916 0.908 0.900 0.890 0.876 ANG. –6.1 –9.1 –11.9 –14.8 –17.9 –20.6 –23.2 –26.3 –29.1 –32.2 –35.0 –37.6 –40.5 –42.9 –45.8 –49.0 –51.2 –54.0 –56.4 S21 MAG. 1.98 1.97 1.96 1.96 1.94 1.92 1.91 1.88 1.87 1.86 1.86 1.81 1.78 1.77 1.75 1.72 1.70 1.67 1.65 ANG. 172.2 168.4 165.0 161.0 157.1 153.7 149.9 146.8 142.8 139.4 136.1 132.9 129.4 125.7 122.6 119.1 115.8 112.6 109.3 S12 MAG. 0.00094 0.00189 0.00230 0.00286 0.00364 0.00353 0.00419 0.00495 0.00509 0.00530 0.00550 0.00601 0.00582 0.00572 0.00553 0.00514 0.00543 0.00506 0.00469 ANG. 79.2 80.4 79.5 79.9 75.2 71.8 70.7 65.5 62.7 66.6 63.8 58.2 60.6 58.5 56.3 56.3 52.9 52.4 51.9 S22 MAG. 0.989 0.987 0.986 0.984 0.981 0.978 0.975 0.972 0.968 0.963 0.960 0.956 0.950 0.945 0.941 0.936 0.930 0.924 0.919 ANG. –4.2 –6.1 –7.9 –9.8 –11.5 –13.4 –15.2 –17.2 –19.1 –20.8 –22.8 –24.5 –26.3 –28.0 –29.9 –31.7 –33.4 –35.2 –37.0 8 Unit: mm 2.95 ± 0.2 1.9 ± 0.2 0.95 0.95 0.4 – 0.05 + 0.1 0.4 – 0.05 + 0.1 0.65 0.16 – 0.06 + 0.1 1.5 ± 0.15 + 0.2 – 0.6 0 – 0.1 0.95 0.85 1.8 ± 0.2 0.3 1.1 – 0.1 + 0.2 0.65 0.4 – 0.05 + 0.1 0.1 0.6 + 0.05 – 2.8 Hitachi Code JEDEC EIAJ Weight (reference value) MPAK-4 — Conforms 0.013 g Cautions 1. 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Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: (2) 2718-3666 Fax: (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: (2) 735 9218 Fax: (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.