6AM15

6AM15 Silicon N/P Channel MOS FET High Speed Power Switching ADE-208-719 (Z) 1st. Edition February 1999 Features • Low on-resistance N Channel : RDS(on) = 0.045 Ω typ. P Channel : RDS(on) = 0.085 Ω typ. High speed switching 4 V gate drive device can be driven from 5 V source High density mounting • • • Outline 6AM15 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Nch Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel dissipation Channel temperature Storage temperature Note: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. 6 Devices operation 3. Value at Ta = 25°C, Rg ≥ 50 Ω VDSS VGSS ID ID(pulse)Note1 IDR IAP Note3 EAR Note3 Pch (Tc = 25°C) Note2 Pch Note2 Tch Tstg 60 ±20 10 40 10 10 Pch –60 ±20 –10 –40 –10 –10 8.5 42 4.8 150 –55 to +150 V V A A A A mJ W W °C °C Unit Electrical Characteristics (N Channel) (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Symbol Min Typ — — — — — 0.045 0.070 9 500 260 110 10 Max — — ±10 10 2.5 0.060 0.115 — — — — — Unit V V µA µA V Ω Ω S pF pF pF ns Test Conditions ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 60 V, VGS = 0 VDS = 10 V, I D = 1 mA ID = 5 A, VGS = 10 V Note5 ID = 5 A, VGS = 4 V Note5 ID = 5 A, VDS = 10 V Note5 VDS = 10 V VGS = 0 f = 1 MHz VGS =10 V, ID = 5 A V(BR)DS 60 S V(BR)GS ±20 S IGSS IDSS — — VGS(off) 1.5 RDS(on) — RDS(on) — |yfs| Ciss Coss Crss td(on) 5.5 — — — — 2 6AM15 Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Note: 5. Pulse test tr td(off) tf VDF trr — — — — — 50 90 100 0.9 52 — — — — — ns ns ns V ns IF =10 A, VGS = 0 IF =10 A, VGS = 0 diF/ dt = 50A/ µs RL = 6 Ω Electrical Characteristics (P Channel) (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Note: 5. Pulse test Symbol Min Typ — — — — — 0.085 0.115 9 850 420 110 12 55 130 70 –0.95 65 Max — — ±10 –10 –2.0 0.105 0.165 — — — — — — — — — — Unit V V µA µA V Ω Ω S pF pF pF ns ns ns ns V ns IF = –10 A, VGS = 0 IF = –10 A, VGS = 0 diF/ dt = 50 A/ µs Test Conditions ID = –10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = –60 V, VGS = 0 VDS = –10 V, I D = –1 mA ID = –5 A, VGS = –10 V Note5 ID = –5 A, VGS = –4 V Note5 ID = –5 A, VDS = –10 V Note5 VDS = –10 V VGS = 0 f = 1 MHz VGS = –10 V, ID = –5 A RL = 6 Ω V(BR)DS –60 S V(BR)GS ±20 S IGSS IDSS — — VGS(off) –1.0 RDS(on) — RDS(on) — |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr 5.5 — — — — — — — — — _ 6AM15 Main Characteristics 4 6AM15 Main Characteristics ( N Channel ) _ 6AM15 Main Characteristics ( N Channel ) 6 6AM15 Main Characteristics ( N Channel ) _ 6AM15 Main Characteristics ( N Channel ) 8 6AM15 Main Characteristics ( P Channel ) _ 6AM15 Main Characteristics ( P Channel ) 10 6AM15 Main Characteristics ( P Channel ) _ 6AM15 Main Characteristics ( P Channel ) 12 6AM15 Package Dimensions Unit: mm _ 6AM15 Cautions 1. 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However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. 14