BB301M

BB301M Build in Biasing Circuit MOS FET IC VHF RF Amplifier ADE-208-506 1st. Edition Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 1.3 dB typ. at f = 200 MHz) • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200 V at C = 200 pF, Rs = 0 conditions. Outline MPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain BB301M Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate 1 to source voltage Gate 2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 6 +6 –0 ±6 25 150 150 –55 to +150 Unit V V V mA mW °C °C 2 BB301M Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate 1 to source breakdown voltage Gate 2 to source breakdown voltage Symbol V(BR)DSS V(BR)G1SS V(BR)G2SS Min 6 +6 ±6 — — 0.4 0.4 10 15 Typ — — — — — — — 15 20 Max — — — +100 ±100 1.0 1.0 20 — Unit V V V nA nA V V mA mS Test conditions I D = 200 µA VG1S = VG2S = 0 I G1 = +10 µA VG2S = VDS = 0 I G2 = ±10 µA VG1S = VDS = 0 VG1S = +5 V VG2S = VDS = 0 VG2S = ±5 V VG1S = VDS = 0 VDS = 5 V, VG2S = 4 V I D = 100 µA VDS = 5 V, VG1S = 5 V I D = 100 µA VDS = 5 V, VG1 = 5 V VG2S = 4 V, RG = 100 kΩ VDS = 5 V, VG1 = 5 V VG2S = 4 V RG = 100 kΩ, f = 1 kHz VDS = 5 V, VG1 = 5 V VG2S = 4 V, RG = 100 kΩ f = 1 MHz VDS = 5 V, VG1 = 5 V VG2S = 4 V RG = 100 kΩ, f = 200 MHz Gate 1 to source cutoff current I G1SS Gate 2 to source cutoff current I G2SS Gate 1 to source cutoff voltage VG1S(off) Gate 2 to source cutoff voltage VG2S(off) Drain current Forward transfer admittance I D(op) |yfs| Input capacitance Output capacitance Reverse transfer capacitance Power gain Noise figure Note: Marking is “AW–”. Ciss Coss Crss PG NF 2.2 0.9 — 22 — 3.0 1.2 0.018 26 1.3 4.0 1.6 0.04 — 1.9 pF pF pF dB dB 3 BB301M Main Characteristics Test Circuit for Operating Items (I D(op) , |yfs|, Ciss, Coss, Crss, NF, PG) VG2 Gate 2 Gate 1 RG VG1 Drain A ID Source Application Circuit VAGC = 4 to 0.3 V BBFET V DS = 5 V Output Input RG V GG = 5 V 4 BB301M Maximum Channel Power Dissipation Curve 200 Channel Power Dissipation Pch (mW) 30 25 150 Drain Current ID (mA) 20 15 10 5 Typical Output Characteristics VG2S = 4 V VG1 = VDS 47 5k 68 6 k Ω kΩ Ω 100 50 RG = 0 50 100 150 200 0 Ambient Temperature Ta (°C) Ω k 82 k Ω 0 10 k Ω 0 12 0 k Ω 15 k Ω 180 kΩ 220 1 2 3 4 Drain to Source Voltage VDS (V) 5 Drain Current vs. Gate2 to Source Voltage 25 kΩ 68 k Drain Current vs. Gate1 Voltage 20 Ω 47 56 20 Drain Current ID (mA) Drain Current ID (mA) 82 k Ω VDS = 5 V RG = 82 kΩ 16 4 V k Ω 15 120 k Ω 10 5 150 k Ω 180 k Ω R G = 220 k Ω VDS = VG1 = 5 V 3 8 4 VG2S = 1 V 0 1 2 3 4 5 Gate2 to Source Voltage VG2S (V) 0 1 2 3 4 V 100 k Ω 12 2V 5 Gate1 Voltage VG1 (V) 5 BB301M Drain Current vs. Gate1 Voltege 20 VDS = 5 V RG = 100 kΩ Drain Current ID (mA) 20 VDS = 5 V RG = 150 kΩ 16 Drain Current vs. Gate1 Voltege 16 Drain Current ID (mA) 12 12 4V 3V 4 V 8 3 V 2V 8 4 VG2S = 1 V 0 1 2 3 4 Gate1 Voltage VG1 (V) 5 4 2V VG2S = 1 V 0 1 2 3 4 Gate1 Voltage VG1 (V) 5 Forward Transfer Admittance |y fs | (mS) Forward Transfer Admittance |y fs | (mS) Forward Transfer Admittance vs. Gate1 Voltage 30 25 20 15 10 5 V G2S = 1 V 0 1 2 3 4 Gate1 Voltage VG1 (V) 5 2V V DS = 5 V R G = 82 k Ω f = 1 kHz Forward Transfer Admittance vs. Gate1 Voltage 30 V DS = 5 V R G = 100 k Ω 25 f = 1 kHz 20 15 2V 10 5 V G2S = 1 V 0 1 2 3 4 Gate1 Voltage VG1 (V) 5 4V 4V 3V 3V 6 BB301M Forward Transfer Admittance vs. Gate1 Voltage 20 VDS = 5 V RG = 150 kΩ 16 f = 1 kHz 12 Power Gain vs. Gate Resistance 30 25 Power Gain PG (dB) 20 15 10 5 VG2S = 1 V 0 1 2 3 4 Gate1Voltage VG1 (V) 5 0 10 VDS = 5 V VG1 = 5 V VG2S = 4 V f = 200 MHz 20 50 100 200 500 1000 Gate Resistance RG (kΩ) Forward Transfer Admittance |y fs | (mS) 4V 3V 2V 8 4 Noise Figure vs. Gate Resistance 4 VDS = 5 V VG1 = 5 V VG2S = 4 V f = 200 MHz 30 25 Power Gain PG (dB) 20 15 10 5 0 10 Power Gain vs. Drain Current Noise Figure NF (dB) 3 2 1 VDS = 5 V VG1 = 5 V VG2S = 4 V RG = variable f = 200 MHz 5 10 15 20 25 30 20 50 100 200 500 1000 0 Gate Resistance RG (kΩ) Drain Current ID (mA) 7 BB301M Noise Figure vs. Drain Current 4 VDS = 5 V VG1 = 5 V VG2S = 4 V RG = variable f = 200 MHz Drain Current vs. Gate Resistance 30 25 Drain Current ID (mA) 20 15 10 5 0 10 VDS = 5 V VG1 = 5 V VG2S = 4 V 20 50 100 200 500 1000 Gate Resistance RG (kΩ) Noise Figure NF (dB) 3 2 1 0 5 10 15 20 25 30 Drain Current ID (mA) Gain Reduction vs. Gate2 to Source Voltage 60 50 40 30 20 10 Input Capacitance Ciss (pF) VDS = 5 V VG1 = 5 V VG2S = 4 V RG = 100 k Ω f = 200 MHz 4 Input Capacitance vs. Gate2 to Source Voltage Gain Reduction GR (dB) 3 2 1 V DS = 5 V V G1 = 5 V R G = 100 k Ω f = 1 MHz 1 2 3 4 5 0 1 2 3 4 5 0 Gate2 to Source Voltage VG2S (V) Gate2 to Source Voltage VG2S (V) 8 BB301M Package Dimentions Unit: mm 2.8 – 0.1 + 0.3 0.65 – 0.3 + 0.1 1.9 0.95 0.95 0.4 – 0.05 + 0.1 + 0.1 0.4 – 0.05 0.16 – 0.06 + 0.1 3 2 + 0.2 2.8 – 0.6 4 0.4 – 0.05 0.95 1.8 + 0.1 1 0.6 – 0.05 0.85 + 0.1 0.3 + 0.2 1.1– 0.1 0.65– 0.3 + 0.1 1.5 0 ~ 0.1 Hitachi Code EIAJ JEDEC MPAK–4 SC–61AA — 9 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. 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Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: (2) 2718-3666 Fax: (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: (2) 735 9218 Fax: (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.