HM628511HJP-10

HM628511H Series 4M High Speed SRAM (512-kword × 8-bit) ADE-203-762D (Z) Rev. 1.0 Sep. 15, 1998 Description The HM628511H Series is a 4-Mbit high speed static RAM organized 512-k word × 8-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell)and high speed circuit designing technology. It is most appropriate for the application which requires high speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. It is packaged in 400-mil 36-pin plastic SOJ. Features • Single 5.0 V supply : 5.0 V ± 10 % • Access time 10 /12 /15 ns (max) • Completely static memory  No clock or timing strobe required • Equal access and cycle times • Directly TTL compatible  All inputs and outputs • Operating current : 180 / 160 / 140 mA (max) • TTL standby current : 70 / 60 / 50 mA (max) • CMOS standby current : 5 mA (max) : 1.2 mA (max) (L-version) • Data retension current: 0.8 mA (max) (L-version) • Data retension voltage: 2 V (min) (L-version) • Center VCC and VSS type pinout HM628511H Series Ordering Information Type No. HM628511HJP-10 HM628511HJP-12 HM628511HJP-15 HM628511HLJP-10 HM628511HLJP-12 HM628511HLJP-15 Access time 10 ns 12 ns 15 ns 10 ns 12 ns 15 ns Package 400-mil 36-pin plastic SOJ (CP-36D) Pin Arrangement HM628511HJP/HLJP Series A0 A1 A2 A3 A4 CS I/O1 I/O2 VCC VSS I/O3 I/O4 WE A5 A6 A7 A8 A9 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 (Top View) 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21 20 19 NC A18 A17 A16 A15 OE I/O8 I/O7 VSS VCC I/O6 I/O5 A14 A13 A12 A11 A10 NC 2 HM628511H Series Pin Description Pin name A0 to A18 I/O1 to I/O8 CS OE WE VCC VSS NC Function Address input Data input/output Chip select Output enable Write enable Power supply Ground No connection Block Diagram (LSB) A1 A17 A7 A11 A16 A2 A6 A5 (MSB) Internal voltage generater Row decoder Memory matrix 256 rows × 8 columns × 256 blocks × 8 bit (4,194,304 bits) VCC VSS CS I/O1 . . . I/O8 Column I/O Input data control Column decoder CS WE CS A10 A8 A9 A12 A13 A14 A0 A18 A15 A3 A4 (LSB) (MSB) OE CS 3 HM628511H Series Operation Table CS H L L L L Note: OE × H L H L ×: H or L WE × H H L L Mode Standby Output disable Read Write Write VCC current I SB , I SB1 I CC I CC I CC I CC I/O High-Z High-Z Dout Din Din Ref. cycle — — Read cycle (1) to (3) Write cycle (1) Write cycle (2) Absolute Maximum Ratings Parameter Supply voltage relative to VSS Voltage on any pin relative to V SS Power dissipation Operating temperature Storage temperature Storage temperature under bias Symbol VCC VT PT Topr Tstg Tbias Value –0.5 to +7.0 –0.5* to V CC+0.5* 1.0 0 to +70 –55 to +125 –10 to +85 1 2 Unit V V W °C °C °C Notes: 1. VT (min) = –2.0 V for pulse width (under shoot) ≤ 8 ns 2. VT (max) = VCC+2.0 V for pulse width (over shoot) ≤ 8 ns Recommended DC Operating Conditions (Ta = 0 to +70°C) Parameter Supply voltage Symbol VCC* VSS * Input voltage VIH VIL Notes: 1. 2. 3. 4. 3 4 Min 4.5 0 2.2 –0.5* 1 Typ 5.0 0 — — Max 5.5 0 VCC + 0.5* 0.8 2 Unit V V V V VIL (min) = –2.0 V for pulse width (under shoot) ≤ 8 ns VIH (max) = VCC+2.0 V for pulse width (over shoot) ≤ 8 ns The supply voltage with all VCC pins must be on the same level. The supply voltage with all VSS pins must be on the same level. 4 HM628511H Series DC Characteristics (Ta = 0 to +70°C, VCC = 5.0 V ± 10 %, VSS = 0V) Parameter Input leakage current Output leakage current Operation power supply current Symbol Min IILII IILO I 10 ns cycle I CC — — — Typ*1 — — — Max 2 2 180 Unit µA µA mA Test conditions Vin = VSS to V CC Vin = VSS to V CC Min cycle CS = VIL, lout = 0 mA Other inputs = VIH/VIL 12 ns cycle I CC 15 ns cycle I CC Standby power supply current 10 ns cycle I SB 12 ns cycle I SB 15 ns cycle I SB I SB1 — — — — — — — — — — — 0.1 160 140 70 60 50 5 mA f = 0 MHz VCC ≥ CS ≥ VCC - 0.2 V, (1) 0 V ≤ Vin ≤ 0.2 V or (2) VCC ≥ Vin ≥ VCC - 0.2 V mA Min cycle, CS = VIH, Other inputs = VIH/VIL —* 2 Output voltage VOL VOH — 2.4 0.1*2 — — 1.2*2 0.4 — V V I OL = 8 mA I OH = –4 mA Notes: 1. Typical values are at VCC = 5.0 V, Ta = +25°C and not guaranteed. 2. This characteristics is guaranteed only for L-version. Capacitance (Ta = +25°C, f = 1.0 MHz) Parameter Input capacitance* 1 1 Symbol Cin CI/O Min — — Typ — — Max 6 8 Unit pF pF Test conditions Vin = 0 V VI/O = 0 V Input/output capacitance* Note: 1. This parameter is sampled and not 100% tested. 5 HM628511H Series AC Characteristics (Ta = 0 to +70°C, VCC = 5.0 V ± 10 %, unless otherwise noted.) Test Conditions • • • • Input pulse levels: 3.0 V/0.0 V Input rise and fall time: 3 ns Input and output timing reference levels: 1.5 V Output load: See figures (Including scope and jig) 5V 480Ω Dout RL=50 Ω 1.5 V Output load (A) 255 Ω 5 pF Dout Zo=50 Ω Output load (B) (for tCLZ, tOLZ, tCHZ, tOHZ, tWHZ, and tOW) Read Cycle HM628511H -10 Parameter Read cycle time Address access time Chip select access time Output enable to outpput valid Output hold from address change Chip select to output in low-Z Output enable to output in low-Z Chip deselect to output in high-Z Output disable to output in high-Z Symbol Min t RC t AA t ACS t OE t OH t CLZ t OLZ t CHZ t OHZ 10 — — — 3 3 0 — — Max — 10 10 5 — — — 5 5 -12 Min 12 — — — 3 3 0 — — Max — 12 12 6 — — — 6 6 -15 Min 15 — — — 3 3 0 — — Max — 15 15 7 — — — 7 7 Unit Notes ns ns ns ns ns ns ns ns ns 1 1 1 1 6 HM628511H Series Write Cycle HM628511H -10 Parameter Write cycle time Address valid to end of write Chip select to end of write Write pulse width Address setup time Write recovery time Data to write time overlap Data hold from write time Write disable to output in low-Z Output disable to output in high-Z Write enable to output in high-Z Note: Symbol Min t WC t AW t CW t WP t AS t WR t DW t DH t OW t OHZ t WHZ 10 7 7 7 0 0 5 0 3 — — Max — — — — — — — — — 5 5 -12 Min 12 8 8 8 0 0 6 0 3 — — Max — — — — — — — — — 6 6 -15 Min 15 10 10 10 0 0 7 0 3 — — Max — — — — — — — — — 7 7 Unit Notes ns ns ns ns ns ns ns ns ns ns ns 1 1 1 9 8 6 7 1. Transition is measured ±200 mV from steady voltage with Load (B). This parameter is sampled and not 100% tested. 2. Address should be valid prior to or coincident with CS transition low. 3. WE and/or CS must be high during address transition time. 4. if CS and OE are low during this period, I/O pins are in the output state. Then, the data input signals of opposite phase to the outputs must not be applied to them. 5. If the CS low transition occurs simultaneously with the WE low transition or after the WE transition, output remains a high impedance state. 6. t AS is measured from the latest address transition to the later of CS or WE going low. 7. t WR is measured from the earlier of CS or WE going high to the first address transition. 8. A write occurs during the overlap of a low CS and a low WE. A write begins at the latest transition among CS going low and WE going low. A write ends at the earliest transition among CS going high and WE going high. tWP is measured from the beginnig of write to the end of write. 9. t CW is measured from the later of CS going low to the the end of write. 7 HM628511H Series Timing Waveforms Read Timing Waveform (1) (WE = VIH) tRC Address Valid address tAA tACS tOH tCHZ CS tOE OE tOLZ tCLZ Dout High Impedance Valid data tOHZ Read Timing Waveform (2) (WE = VIH, CS = VIL , OE = VIL ) tRC Address tOH Dout Valid address tAA tOH Valid data 8 HM628511H Series Read Timing Waveform (3) (WE = VIH, CS = VIL , OE = VIL )*2 tRC CS tACS tCLZ Dout High Impedance Valid data High Impedance tCHZ Write Timing Waveform (1) (WE Controlled) tWC Address Valid address tAW OE tCW CS*3 tAS WE*3 tOHZ Dout High impedance*5 tDW Din *4 tDH *4 tWP tWR Valid data 9 HM628511H Series Write Timing Waveform (2) (CS Controlled) tWC Address Valid address tCW CS *3 tAW tWP WE *3 tAS tWHZ Dout tOW High impedance*5 tDW Din *4 tDH *4 tWR Valid data 10 HM628511H Series Low VCC Data Retention Characteristics (Ta = 0 to +70°C) This characteristics is guaranteed only for L-version. Parameter VCC for data retention Symbol VDR Min 2.0 Typ*1 — Max — Unit V Test conditions VCC ≥ CS ≥ VCC – 0.2 V (1) 0 V ≤ Vin ≤ 0.2 V or (2) VCC ≥ Vin ≥ VCC – 0.2 V VCC = 3 V, VCC ≥ CS ≥ VCC – 0.2 V (1) 0 V ≤ Vin ≤ 0.2 V or (2) VCC ≥ Vin ≥ VCC – 0.2 V See retention waveform Data retention current I CCDR — 50 800 µA Chip deselect to data retention time Operation recovery time Note: t CDR tR 0 5 — — — — ns ms 1. Typical values are at VCC = 3.0 V, Ta = +25˚C, and not guaranteed. Low V CC Data Retention Timing Waveform tCDR VCC 3.0 V VDR 2.2 V CS 0V VCC ≥ CS ≥ VCC – 0.2 V Data retention mode tR 11 HM628511H Series Package Dimensions HM628511HJP/HLJP Series (CP-36D) Unit: mm 23.25 23.62 Max 36 19 10.16 ± 0.13 1 3.50 ± 0.26 0.74 18 2.85 ± 0.12 1.30 Max 0.80 +0.25 –0.17 11.18 ± 0.13 0.43 ± 0.10 0.41 ± 0.08 1.27 9.40 ± 0.25 Hitachi Code JEDEC EIAJ Weight (reference value) CP-36D Conforms Conforms 1.4 g 0.10 Dimension including the plating thickness Base material dimension 12 HM628511H Series Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & IC Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Europe GmbH Electronic components Group Dornacher Straße 3 D-85622 Feldkirchen, Munich Germany Tel: (89) 9 9180-0 Fax: (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: (1628) 585000 Fax: (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: (2) 2718-3666 Fax: (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: (2) 735 9218 Fax: (2) 730 0281 Telex: 40815 HITEC HX Hitachi Semiconductor (America) Inc. 2000 Sierra Point Parkway Brisbane, CA 94005-1897 Tel: (800) 285-1601 Fax: (303) 297-0447 Copyright © Hitachi, Ltd., 1998. All rights reserved. Printed in Japan. 13