HM62V16258BLTT-7SL

HM62V16258B Series 4 M SRAM (256-kword × 16-bit) ADE-203-975B (Z) Rev. 2.0 Oct. 14, 1999 Description The Hitachi HM62V16258B Series is 4-Mbit static RAM organized 262,144-word × 16-bit. HM62V16258B Series has realized higher density, higher performance and low power consumption by employing Hi-CMOS process technology. It offers low power standby power dissipation; therefore, it is suitable for battery backup systems. It is packaged in standard 44-pin plastic TSOPII. Features • • • Single 3.0 V supply: 2.7 V to 3.6 V Fast access time: 70 ns/85 ns (max) Power dissipation:  Active: 9 mW (typ)  Standby: 3 µW (typ) Completely static memory.  No clock or timing strobe required Equal access and cycle times Common data input and output.  Three state output B attery backup operation. • • • • HM62V16258B Series Ordering Information Type No. HM62V16258BLTT-7 HM62V16258BLTT-8 HM62V16258BLTT-7SL HM62V16258BLTT-8SL Access time 70 ns 85 ns 70 ns 85 ns Package 400-mil 44-pin plastic TSOPII (normal-bend type) (TTP-44DB) 2 HM62V16258B Series Pin Arrangement 44-pin TSOP A4 A3 A2 A1 A0 CS I/O0 I/O1 I/O2 I/O3 VCC VSS I/O4 I/O5 I/O6 I/O7 WE A17 A16 A15 A14 A13 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 (Top view) 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 A5 A6 A7 OE UB LB I/O15 I/O14 I/O13 I/O12 VSS VCC I/O11 I/O10 I/O9 I/O8 NC A8 A9 A10 A11 A12 Pin Description Pin name A0 to A17 I/O0 to I/O15 CS WE OE LB UB VCC VSS NC Function Address input Data input/output Chip select Write enable Output enable Lower byte select Upper byte select Power supply Ground No connection 3 HM62V16258B Series Block Diagram LSB V CC V SS • • • • • A4 A3 A15 A14 A16 A1 A2 A17 A0 A13 Row decoder Memory matrix 2,048 x 2,048 MSB I/O0 Input data control I/O15 • • Column I/O Column decoder • • LSB A7 A6A5 A8 A9A10A11 A12MSB • • CS LB UB WE OE Control logic 4 HM62V16258B Series Operation Table CS H × L L L L L L L WE × × H H H L L L H OE × × L L L × × × H UB × H L H L L H L × LB × H L L H L L H × I/O0 to I/O7 High-Z High-Z Dout Dout High-Z Din Din High-Z High-Z I/O8 to I/O15 High-Z High-Z Dout High-Z Dout Din High-Z Din High-Z Operation Standby Standby Read Lower byte read Upper byte read Write Lower byte write Upper byte write Output disable Note: H: V IH, L: VIL, ×: VIH or VIL Absolute Maximum Ratings Parameter Power supply voltage relative to V SS Terminal voltage on any pin relative to V SS Power dissipation Storage temperature range Storage temperature range under bias Symbol VCC VT PT Tstg Tbias Value –0.5 to + 4.6 –0.5* to V CC + 0.3* 1.0 –55 to +125 –10 to +85 1 2 Unit V V W °C °C Notes: 1. VT min: –3.0 V for pulse half-width ≤ 30 ns. 2. Maximum voltage is +4.6 V. DC Operating Conditions Parameter Supply voltage Symbol VCC VSS Input high voltage Input low voltage Ambient temperature range Note: VIH VIL Ta Min 2.7 0 2.0 –0.3 0 Typ 3.0 0 — — — Max 3.6 0 VCC + 0.3 0.6 70 Unit V V V V °C 1 Note 1. VIL min: –3.0 V for pulse half-width ≤ 30 ns. 5 HM62V16258B Series DC Characteristics Parameter Input leakage current Output leakage current Operating current Symbol Min |ILI| |ILO | I CC — — — — Typ*1 — — — — Max 1 1 20 70 Unit µA µA mA mA Test conditions Vin = VSS to V CC CS = VIH or OE = VIH or WE = VIL or, LB = UB =VIH , VI/O = VSS to V CC CS = VIL, Others = VIH/VIL, I I/O = 0 mA Min. cycle, duty = 100%, I I/O = 0 mA, CS = VIL, Others = VIH/VIL Average HM62V16258B-7 I CC1 operating current HM62V16258B-8 I CC1 I CC2 — — — 3 65 15 mA mA Cycle time = 1 µs, duty = 100%, I I/O = 0 mA, CS ≤ 0.2 V, VIH ≥ V CC – 0.2 V, VIL ≤ 0.2 V CS = VIH 0 V ≤ Vin CS ≥ V CC – 0.2 V Standby current Standby current I SB I SB1* 2 — — — 2.4 — 1 1 — 0.3 40 20 — — 0.4 0.2 mA µA µA V V V V I SB1*3 Output high voltage VOH I OH = –1 mA I OH = –100 µA I OL = 2 mA I OL = 100 µA VCC – 0.2 — Output low voltage VOL — — — — Notes: 1. Typical values are at VCC = 3.0 V, Ta = +25°C and not guaranteed. 2. This characteristic is guaranteed only for L version. 3. This characteristic is guaranteed only for L-SL version. Capacitance (Ta = +25°C, f = 1.0 MHz) Parameter Input capacitance Input/output capacitance Note: Symbol Cin CI/O Min — — Typ — — Max 8 10 Unit pF pF Test conditions Vin = 0 V VI/O = 0 V Note 1 1 1. This parameter is sampled and not 100% tested. 6 HM62V16258B Series AC Characteristics (Ta = 0 to +70°C, VCC = 2.7 V to 3.6 V, unless otherwise noted.) Test Conditions • • • • • Input pulse levels: VIL = 0.4 V, VIH = 2.2 V Input rise and fall time: 5 ns Input timing reference levels: 1.4 V Output timing reference levels: 1.4 V Output load: 1 TTL + 30 pF (HM62V16258B-7) (Including scope and jig) 1 TTL + 100 pF (HM62V16258B-8) (Including scope and jig) Read Cycle HM62V16258B -7 Parameter Read cycle time Address access time Chip select access time Output enable to output valid Output hold from address change LB, UB access time Chip select to output in low-Z LB, UB enable to low-z Output enable to output in low-Z Chip deselect to output in high-Z LB, UB disable to high-Z Output disable to output in high-Z Symbol t RC t AA t ACS t OE t OH t BA t CLZ t BLZ t OLZ t CHZ t BHZ t OHZ Min 70 — — — 10 — 10 5 5 0 0 0 Max — 70 70 40 — 70 — — — 25 25 25 -8 Min 85 — — — 10 — 10 5 5 0 0 0 Max — 85 85 45 — 85 — — — 25 25 25 Unit ns ns ns ns ns ns ns ns ns ns ns ns 2, 3 2, 3 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 Notes 7 HM62V16258B Series Write Cycle HM62V16258B -7 Parameter Write cycle time Address valid to end of write Chip selection to end of write Write pulse width LB, UB valid to end of write Address setup time Write recovery time Data to write time overlap Data hold from write time Output active from end of write Symbol t WC t AW t CW t WP t BW t AS t WR t DW t DH t OW Min 70 60 60 50 55 0 0 30 0 5 0 0 Max — — — — — — — — — — 25 25 -8 Min 85 70 70 55 70 0 0 35 0 5 0 0 Max — — — — — — — — — — 25 25 Unit ns ns ns ns ns ns ns ns ns ns ns ns 2 1, 2 1, 2 6 7 5 4 Notes Output disable to output in High-Z t OHZ Write to output in high-Z t WHZ Notes: 1. t CHZ, tOHZ , t WHZ and tBHZ are defined as the time at which the outputs achieve the open circuit conditions and are not referred to output voltage levels. 2. This parameter is sampled and not 100% tested. 3. At any given temperature and voltage condition, t HZ max is less than tLZ min both for a given device and from device to device. 4. A write occures during the overlap of a low CS , a low WE and a low LB or a low UB . A write begins at the latest transition among CS going low, WE going low and LB going low or UB going low. A write ends at the earliest transition among CS going high, WE going high and LB going high or UB going high. t WP is measured from the beginning of write to the end of write. 5. t CW is measured from the later of CS going low to the end of write. 6. t AS is measured from the address valid to the beginning of write. 7. t WR is measured from the earliest of CS or WE going high to the end of write cycle. 8 HM62V16258B Series Timing Waveform Read Cycle t RC Address tAA tACS CS tCLZ*2, 3 tCHZ*1, 2, 3 tBHZ*1, 2, 3 tBA LB, UB tBLZ*2, 3 tOHZ*1, 2, 3 tOE OE tOLZ*2, 3 Dout High impedance Valid data tOH Valid address 9 HM62V16258B Series Write Cycle (1) (WE Clock) tWC Address Valid address tWR*7 tCW*5 CS tBW LB, UB tAW tWP*4 WE tAS*6 tDW Din tWHZ*1, 2 Valid data tDH tOW*2 High impedance Dout 10 HM62V16258B Series Write Cycle (2) (CS Clock, OE = VIH) tWC Address Valid address tAW tAS*6 CS tBW LB, UB tCW*5 tWR*7 tWP*4 WE tDW Din Valid data tDH High impedance Dout 11 HM62V16258B Series Write Cycle (3) (LB, UB Clock, OE = VIH) tWC Address Valid address tAW tCW*5 CS tAS*6 LB, UB tBW tWR*7 tWP*4 WE tDW Din Valid data tDH High impedance Dout 12 HM62V16258B Series Low VCC Data Retention Characteristics (Ta = 0 to +70 °C) Parameter VCC for data retention Symbol VDR Min 2.0 Typ* 4 Max — — Unit V Test conditions*3 Vin ≥ 0V (1) CS ≥ V CC – 0.2 V or (2) LB = UB ≥ V CC – 0.2 V CS ≤ 0.2 V VCC = 3.0 V, Vin ≥ 0V (1) CS ≥ V CC – 0.2 V or (2) LB = UB ≥ V CC – 0.2 V CS ≤ 0.2 V Data retention current I CCDR *1 — 0.8 20 µA I CCDR *2 Chip deselect to data retention time Operation recovery time t CDR tR — 0 t RC*5 0.8 — — 10 — — µA ns ns See retention waveform Notes: 1. This characteristic is guaranteed only for L-version, 10 µA max. at Ta = 0 to +40°C. 2. This characteristic is guaranteed only for L-SL version, 5 µA max. at Ta = 0 to +40°C. 3. CS controls address buffer, WE buffer, OE buffer, LB, UB buffer and Din buffer. If CS controls data retention mode, Vin levels (address, WE, OE, LB, UB , I/O) can be in the high impedance state. If LB, UB controls data retention mode, LB, UB must be LB = UB ≥ V CC – 0.2 V, CS must be CS ≤ 0.2 V. The other input levels (address, WE, OE, I/O) can be in the high impedance state. 4. Typical values are at VCC = 3.0 V, Ta = +25˚C and not guaranteed. 5. t RC = read cycle time. 13 HM62V16258B Series Low V CC Data Retention Timing Waveform (1) (CS Controlled) Data retention mode tR t CDR V CC 2.7 V V DR 2.0 V CS 0V CS ≥ VCC – 0.2 V Low V CC Data Retention Timing Waveform (2) (LB, UB Controlled) Data retention mode tR t CDR V CC 2.7 V V DR 2.0 V LB, UB 0V LB, UB ≥ VCC – 0.2 V 14 HM62V16258B Series Package Dimensions HM62V16258BLTT Series (TTP-44DB) Unit: mm 18.41 18.81 Max 44 23 1 0.30 ± 0.10 0.25 ± 0.05 0.80 0.13 M 22 0.80 11.76 ± 0.20 0° – 5° 0.17 ± 0.05 0.125 ± 0.04 0.13 ± 0.05 0.50 ± 0.10 1.005 Max 1.20 Max 0.10 10.16 Dimension including the plating thickness Base material dimension Hitachi Code JEDEC EIAJ Weight (reference value) TTP-44DB — — 0.43 g 15 HM62V16258B Series Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: (408) 433-1990 Fax: (408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher Straße 3 D-85622 Feldkirchen, Munich Germany Tel: (89) 9 9180-0 Fax: (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: (1628) 585000 Fax: (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: (2) 2718-3666 Fax: (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: (2) 735 9218 Fax: (2) 730 0281 Telex: 40815 HITEC HX Copyright © Hitachi, Ltd., 1998. All rights reserved. Printed in Japan. 16