HRF302A

HRF302A Silicon Schottky Barrier Diode for Rectifying ADE-208-244C(Z) Rev 3 Features • Low forward voltage drop and suitable for high effifiency rectifying. • DO-214 is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HRF302A Laser Mark 302A Package Code DO-214 Outline Cathode mark Mark 302A 1 2 Lot No. 1. Cathode 2. Anode HRF302A Absolute Maximum Ratings (Ta = 25°C) Item Repetitive peak reverse voltage Average rectified current Non-Repetitive peak forward surge current Junction temperature Storage temperature Symbol V *1 RRM Value 20 3 Unit V A A °C °C I o*1 I FSM Tj Tstg *2 100 125 –40 to +125 Notes: 1. See from Fig.4 to Fig.7 2. 10msec half sine wave 1 pulse Electrical Characteristics (Ta = 25°C) Item Forward voltage Reverse current ESD-Capability Thermal resistance Symbol VF IR — Rth(j-a) Rth(j-c) Note: 1. Glass epoxy board Min — — 250 — — Typ — — — 100 34 Max 0.40 1.0 — — — Unit V mA V Test Condition I F = 3A VR = 20V C = 200pF , R = 0Ω , Both forward and reverse direction 1 pulse. *1 ° C/W Glass epoxy board Tc = 25° C Land size 3.5 6.8 2.0 Unit: mm 2 HRF302A Main Characteristic 2 10 10 Pulse test -2 Pulse test Ta=75°C Forward current I F (A) 10 Ta=75°C 1.0 Reverse current IR (A) 10 -3 10 -1 Ta=25°C 10 -4 Ta=25°C 10 -2 10 -5 10 -3 0 0.1 0.2 0.3 0.4 0.5 0.6 10 -6 0 Forward voltage V F (V) Fig.1 Forward current Vs. Forward voltage 10 20 15 5 Reverse voltage V R (V) 25 Fig.2 Reverse current Vs. Reverse voltage 10 3 f=1MHz Pulse test Capacitance C (pF) 10 2 10 1.0 10 Reverse voltage V R (V) 40 Fig.3 Capacitance Vs. Reverse voltage 3 HRF302A Main Characteristic 2.5 0A t T Tj =25°C D=1/6 t D= ― T 2.0 0V D=5/6 t D= ― T Forward power dissipation Pd (W) 2.0 Reverse power dissipation Pd (W) t 1.5 T Tj =125°C D=2/3 D=1/3 Sin 1.5 D=1/2 DC 1.0 D=1/2 1.0 Sin 0.5 0.5 0 0 0.5 1.0 1.5 2.0 2.5 3.0 0 0 5 10 15 20 Reverse voltage V R(V) Fig.5 Reverse power dissipation Vs. Reverse voltage Forward current I F (A) Fig.4 Forward p ower dissipation Vs. Forward current 3.5 3.0 D=1/3 Average forward current IO (A) 3.5 VR=VRRM/2 Tj =125°C DC Average forward current IO (A) 3.0 DC VR=VRRM/2 Tj =125°C Glass epoxy PCB D=1/2 2.5 2.0 1.5 1.0 0.5 0 0 25 50 75 100 125 Case temperature Tc (°C) D=1/6 Sin 2.5 D=1/2 2.0 D=1/3 1.5 D=1/6 1.0 Sin 0.5 0 -25 0 25 50 75 100 125 Ambient temperature Ta (°C) Fig.7 Average forward current Vs. Ambient temperature Fig.6 Average forward current Vs. Case temperature 4 HRF302A Package Dimensions Unit : mm Cathode Mark 3.0 ± 0.2 4.0 ± 0.2 1 302A 7.0 ± 0.2 8.0 ± 0.3 2 Lot No. 1 Cathode 2 Anode 0.25 1.2 ± 0.3 2.1 ± 0.2 Hitachi Code JEDEC Code EIAJ Code Weight (g) DO-214 DO-214 — 0.16 5