HRW0202

HRW0202A Silicon Schottky Barrier Diode for Rectifying ADE-208-209E (Z) Rev 5 Jul. 1998 Features • Low forward voltage drop and suitable for high effifiency rectifying. • MPAK Package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HRW0202A Laser Mark S17 Package Code MPAK Outline 3 2 1 (Top View) 1 Anode 2 Anode 3 Cathode HRW0202A Absolute Maximum Ratings (Ta = 25°C) *1 Item Repetitive peak reverse voltage Average rectified current Non-Repetitive peak forward surge current Junction temperature Storage temperature Symbol V *2 RRM Value 20 200 Unit V mA A °C °C I O*2 I FSM Tj Tstg *3 3 125 –55 to +125 Notes 1. Two device total Notes 2. See from Fig.4 to Fig.7 Notes 3. 10msec sine wave 1 pulse Electrical Characteristics (Ta = 25°C) *1 Item Forward voltage Reverse current Thermal resistance Symbol VF IR Rth(j-a) Min — — — Typ — — 350 Max 0.40 50 — Unit V µA Test Condition I F = 100 mA VR = 20V ° C/W Polyimide board *2 Notes 1. Per one device Notes 2. Polyimide board 20hx15wx0.8t 1.5 3.0 1.5 1.5 0.8 Unit: mm 2 HRW0202A Main Characteristic 1.0 Pulse test 10 –1 10 –3 Pulse test –4 Forward current I F (A) 10 –2 Ta = 75°C Reverse current I R (A) 10 Ta = 75°C 10 –5 10 –3 Ta = 25°C 10 –6 10 –4 Ta = 25°C 10 –5 10 –7 10 –6 0 0.1 0.2 0.3 0.4 0.5 0.6 10 –8 0 Forward voltage VF (V) Fig.1 Forward current Vs. Forward voltage 15 20 5 10 Reverse voltage VR (V) 25 Fig.2 Reverse current Vs. Reverse voltage 10 2 f = 1MHz Pulse test Capacitance C (pF) 10 1.0 1.0 10 Reverse voltage VR (V) 40 Fig.3 Capacitance Vs. Reverse voltage 3 HRW0202A Main Characteristic 0.08 Forward power dissipation Pd (W) 0A t 0.25 D=1/6 Reverse power dissipation Pd (W) 0V t D= \ T 0.06 T t Tj =25°C D= T\ 0.20 T t Sin( ˘=180°) D=1/3 D=1/2 DC D=5/6 D=2/3 D=1/2 Sin( ˘=180°) Tj =125°C 0.15 0.04 0.10 0.02 0.05 0 0 0 0.02 0.04 0.06 0.08 @ @IF @(A) 0.1 0 5 10 15 20 25 Forward current Reverse voltage @ @VR @(V) Fig4. Forward power dissipation Vs. Forward current Fig5. Reverse power dissipation Vs. Reverse voltage 0.12 @Io (A) 0.25 @Io (A) 0.10 Sin( ˘=180°) 0.08 0.06 D=1/6 0.04 VR=VRRM/2 DC D=1/2 D=1/3 0.20 Sin( ˘=180°) D=1/2 0.15 D=1/3 D=1/6 0.10 0.05 TjR RRM =125°C 0 -25 V =V /2 DC Average rectified current 0.02 Tj =125°C 0 -25 Rth(j-a)=350°C/W Per one device Average rectified current Rth(j-a)=350°C/W Two device total 0 25 50 75 100 125 0 25 50 75 100 125 Ambient temperature Ta ( °C) Fig.6 Average rectified current Vs. Ambient temperature Ambient temperature Ta ( °C) Fig.7 Average rectified current Vs. Ambient temperature 4 HRW0202A Package Dimensions Unit : mm 0.65 – 0.3 + 0.1 Laser Mark 0.4 – 0.05 + 0.10 0.16 – 0.06 + 0.10 3 + 0.2 – 0.6 0.1 0.65 + 0.3 – 2 0.95 1 0.95 2.8 S17 1.9 0.3 2.8 + 0.1 – 1.5 0 – 0.10 1 Anode 2 Anode 3 Cathode Hitachi Code JEDEC Code EIAJ Code Weight (g) MPAK(1) — SC-59A 0.011 0.3 1.1 – 0.1 + 0.2 5 HRW0202A Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. 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Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & IC Div. 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Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: (2) 2718-3666 Fax: (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: (2) 735 9218 Fax: (2) 730 0281 Telex: 40815 HITEC HX Copyright © Hitachi, Ltd., 1998. All rights reserved. Printed in Japan. 6