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436MS8GE

436MS8GE

  • 厂商:

    HITTITE

  • 封装:

  • 描述:

    436MS8GE - GaAs MMIC DPDT DIVERSITY OR SP3T SWITCH, 4.9 - 5.9 GHz - Hittite Microwave Corporation

  • 数据手册
  • 价格&库存
436MS8GE 数据手册
HMC436MS8G / 436MS8GE Typical Applications this switch is ideal for use as a DPDt Diversity or SP3t Switch for: • hiperLAN & 802.11a wLAN • wiMAX & Fixed wireless • UNii Radios • Mulit-beam Antenna Switching Functional Diagram ED U IN NT T O SC DUC DI RO P v04.0607 GaAs MMIC DPDT DIVERSITY OR SP3T SWITCH, 4.9 - 5.9 GHz Features DPDt or SP3t Functionality Low insertion Loss: 1 dB high iP3: +52 dBm high input P0.1dB: +32 dBm Positive control: 0/+3V or 0/+5V Optional ”All-Off” State e ot R N d men General Description com w r Ne o ed f s sign De 15 SwitcheS - tRANSFeR - SMt the hMc436MS8G & hMc436MS8Ge are low cost c-band DPDt switches that operate between 4.9 and 5.9 Ghz. this switch can operate as an integrated antenna diversity and transmit/receive switch for the 802.11a/hiperLAN and UNii radio platforms. the switch can also operate as a SP3t switch with any of the RF ports serving as the common port. the design provides 20 dB of isolation between antennas and between tx and Rx ports. the switch features 1 dB insertion loss and high power handling capability. Switch state is controlled using four control voltage lines toggled between 0 and +3 to +5V. Electrical Specifications, Parameter insertion Loss TA = +25° C, Vctl = 0/+3 Vdc (Unless Otherwise Stated), 50 Ohm System Frequency 4.9 - 5.1 Ghz 5.1 - 5.9 Ghz 4.9 - 5.1 Ghz 5.1 - 5.4 Ghz 5.4 - 5.9 Ghz 4.9 - 5.1 Ghz 5.1 - 5.4 Ghz 5.4 - 5.9 Ghz Vctl= 0/+3V Vctl= 0/+5V Vctl= 0/+3V Vctl= 0/+5V Vctl= 0/+3V Vctl= 0/+5V tRiSe / tFALL (10/90% RF) tON / tOFF (50% ctL to 10/90% RF) 4.9 - 5.9 Ghz 4.9 - 5.9 Ghz 4.9 - 5.9 Ghz 4.9 - 5.9 Ghz 10 25 ns ns 14 16 20 17 16 13 27 30 23 29 47 49 Min. typ. 1.2 1.0 18 20 25 20 20 17 30 33 26 32 50 52 Max. 1.5 1.4 Units dB dB dB dB dB dB dB dB dBm dBm dBm dBm dBm dBm isolation Return Loss (On State, Any Port) input Power for 1 dB compression input Power for 0.1 dB compression input third Order intercept (two-tone input Power= +17 dBm each tone) Switching characteristics 15 - 1 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC436MS8G / 436MS8GE Insertion Loss 0 -0.5 INSERTION LOSS (dB) -1 -1.5 -2 -2.5 -3 -3.5 -4 4.5 ED U IN NT T O SC DUC DI RO P v04.0607 GaAs MMIC DPDT DIVERSITY OR SP3T SWITCH, 4.9 - 5.9 GHz Insertion Loss vs. Temperature 0 -0.5 INSERTION LOSS (dB) -1 -1.5 -2 ANT1-Tx State 1 ANT1-Rx State 2 ANT2-Tx State 3 ANT2-Rx State 4 ANT1-ANT2 State 5 Tx-Rx State 6 -2.5 5 5.5 FREQUENCY (GHz) N Isolation, Tx & Rx 0 e ot R 6 d men com 6.5 -3.5 w r Ne o ed f -3 -4 4.5 5 s sign De +25 C +85 C -40 C 5.5 6 6.5 FREQUENCY (GHz) Isolation, ANT1 & ANT2 0 State 1 State 2 State 3 State 4 State 5 State 1 State 2 State 3 State 4 State 6 -10 ISOLATION (dB) -10 ISOLATION (dB) 15 SwitcheS - tRANSFeR - SMt 15 - 2 -20 -20 -30 -30 -40 -40 -50 4.5 5 5.5 FREQUENCY (GHz) 6 6.5 -50 4.5 5 5.5 FREQUENCY (GHz) 6 6.5 Return Loss, ANT1 & ANT2 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 -35 -40 4.5 ANT1 State 1 ANT1 State 2 ANT1 State 5 ANT2 State 3 ANT2 State 4 ANT2 State 5 Return Loss, Tx & Rx 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 -35 4.5 Tx State 1 Tx State 3 Tx State 6 Rx State 2 Rx State 4 Rx State 6 5 5.5 FREQUENCY (GHz) 6 6.5 5 5.5 FREQUENCY (GHz) 6 6.5 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC436MS8G / 436MS8GE Isolation, ANT1 / ANT2 - Tx / Rx 0 -10 ISOLATION (dB) -20 -30 -40 4.5 ED U IN NT T O SC DUC DI RO P v04.0607 GaAs MMIC DPDT DIVERSITY OR SP3T SWITCH, 4.9 - 5.9 GHz Input IP3 * 60 ANT1-Tx State 2 ANT1-Rx State 1 ANT2-Tx State 1 ANT2-Rx State 2 ANT1-ANT2 State 6 Tx-Rx State 5 55 50 45 5 5.5 FREQUENCY (GHz) e ot R N 6 d men com 6.5 40 4.5 w r Ne o ed f 5 s sign De Vctl=0/+3V Vctl=0/+5V IP3 (dBm) 5.5 6 6.5 FREQUENCY (GHz) Input 0.1 dB Compression Point 34 COMPRESSION POINT (dBm) Input 1 dB Compression Point, Vctl= 0/+3V 34 COMPRESSION POINT (dBm) 32 30 28 26 24 22 20 4.5 +25 C +85 C -40 C 15 SwitcheS - tRANSFeR - SMt 32 30 28 26 24 22 20 4.5 Vctl=0/+3V Vctl=0/+5V 5 5.5 FREQUENCY (GHz) 6 6.5 5 5.5 FREQUENCY (GHz) 6 6.5 Control Voltages State Low high Bias condition 0 to +0.5 Vdc @ 20 µA +3.0 to +5.5 Vdc @ 20 µA typ. Truth Table Path ANt1 - tx ANt1 - Rx ANt2 - tx ANt2 - Rx ANt1 - ANt2 tx - Rx All Off* V1 high high Low Low high Low Low V2 Low Low high high high Low Low V3 high Low high Low Low high Low V4 Low high Low high Low high Low State 1 2 3 4 5 6 7 * External components are necessary if “all off” isolation state is desired. See HMC436MS8G product note. * Two-tone input power = +17 dBm each tone, 1 MHz spacing. 15 - 3 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC436MS8G / 436MS8GE Absolute Maximum Ratings RF input Power Vctl= 0/+3V control Voltage Range (V1, V2, V3, V4) hot Switch Power Level (Vctl = 0/+3V) channel temperature continuous Pdiss ( t=85 °c) (derate 16.7 mw/ °c above 85°c) thermal Resistance Storage temperature Operating temperature eSD Sensitivity (hBM) ED U IN NT T O SC DUC DI RO P v04.0607 +30 dBm -0.5 to +7.5 Vdc +26 dBm 150 °c 1w 60 °c/w -65 to +150 °c -40 to +85 °c GaAs MMIC DPDT DIVERSITY OR SP3T SWITCH, 4.9 - 5.9 GHz DC blocking capacitors are required at ports ANT1, ANT2, Tx, Rx. eLectROStAtic SeNSitiVe DeVice OBSeRVe hANDLiNG PRecAUtiONS Outline Drawing e ot R N class 1A d men com w r Ne o ed f s sign De 15 SwitcheS - tRANSFeR - SMt 15 - 4 NOteS: 1. LeADFRAMe MAteRiAL: cOPPeR ALLOY 2. DiMeNSiONS ARe iN iNcheS [MiLLiMeteRS]. 3. DiMeNSiON DOeS NOt iNcLUDe MOLDFLASh OF 0.15mm PeR SiDe. 4. DiMeNSiON DOeS NOt iNcLUDe MOLDFLASh OF 0.25mm PeR SiDe. 5. ALL GROUND LeADS AND GROUND PADDLe MUSt Be SOLDeReD tO PcB RF GROUND. Package Information Part Number hMc436MS8G hMc436MS8Ge Package Body Material Low Stress injection Molded Plastic RohS-compliant Low Stress injection Molded Plastic Lead Finish Sn/Pb Solder 100% matte Sn MSL Rating MSL1 MSL1 [1] Package Marking [3] h436 XXXX h436 XXXX [2] [1] Max peak reflow temperature of 235 °c [2] Max peak reflow temperature of 260 °c [3] 4-Digit lot number XXXX For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC436MS8G / 436MS8GE Pin Descriptions Pin Number 1, 4 2, 3, 6, 7 5, 8 ED U IN NT T O SC DUC DI RO P v04.0607 Function Description ANt1, ANt2 these pins are Dc coupled and matched to 50 Ohms. Blocking capacitors are required. V1, V2, V4, V3 See truth and control voltage tables. Rx, tx these pins are Dc coupled and matched to 50 Ohms. Blocking capacitors are required. GND GaAs MMIC DPDT DIVERSITY OR SP3T SWITCH, 4.9 - 5.9 GHz interface Schematic e ot R N Package bottom has exposed metal paddle that must be connected to PcB RF ground. d men com w r Ne o ed f s sign De 15 SwitcheS - tRANSFeR - SMt 15 - 5 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC436MS8G / 436MS8GE Evaluation PCB ED U IN NT T O SC DUC DI RO P v04.0607 GaAs MMIC DPDT DIVERSITY OR SP3T SWITCH, 4.9 - 5.9 GHz e ot R N d men com w r Ne o ed f s sign De 15 SwitcheS - tRANSFeR - SMt 15 - 6 List of Materials for Evaluation PCB 103132 [1] item J1 - J4 J5 - J8 c1 - c4 R1 - R4 [3] U1 PcB [2] Description PcB Mount SMA connector Dc Pin 100 pF capacitor, 0402 Pkg. 100 Ohm Resistor, 0402 Pkg. hMc436MS8G / hMc436MS8Ge DPDt Diversity or SP3t Switch 103037 evaluation PcB 1.5” x 1.5” [1] Reference this number when ordering complete evaluation PcB [2] circuit Board Material: Rogers 4350 [3] these optional resistors will provide isolation between the Dc and RF circuitry. the circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown above. A sufficient number of viaholes should be used to connect the top and bottom ground planes. the evaluation circuit board shown above is available from hittite upon request. For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com
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