452QS16GE

HMC452QS16G / 452QS16GE v01.0205 InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz 5 AMPLIFIERS - SMT Typical Applications The HMC452QS16G / HMC452QS16GE is ideal for applications requiring a high dynamic range amplifier: • GSM, GPRS & EDGE • CDMA & W-CDMA • CATV/Cable Modem • Fixed Wireless & WLL Features Output IP3: +48 dBm 22.5 dB Gain @ 400 MHz 9 dB Gain @ 2100 MHz 53% PAE @ +31 dBm Pout +24 dBm CDMA2000 Channel Power@ -45 dBc ACP Single +5V Supply Integrated Power Control (VPD) QSOP16G SMT Package: 29.4 mm2 Functional Diagram General Description The HMC452QS16G & HMC452QS16GE are high dynamic range GaAs InGaP Heterojunction Bipolar Transistor (HBT) 1 watt MMIC power amplifiers operating between 0.4 and 2.2 GHz. Packaged in a miniature 16 lead QSOP plastic package, the amplifier gain is typically 22.5 dB at 0.4 GHz and 9 dB at 2.1 GHz. Utilizing a minimum number of external components and a single +5V supply, the amplifier output IP3 can be optimized to +43 dBm at 0.4 GHz or +48 dBm at 2.1 GHz. The power control (VPD) can be used for full power down or RF output power/ current control. The high output IP3 and PAE make the HMC452QS16G & HMC452QS16GE ideal power amplifiers for Cellular/PCS/3G, WLL, ISM and Fixed Wireless applications. Electrical Specifications, TA = +25°C, Vs= +5V, VPD = +5V [1] Parameter Frequency Range Gain Gain Variation Over Temperature Input Return Loss Output Return Loss Output Power for 1dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) [2] Noise Figure Supply Current (Icq) Control Current (IPD) 40 27.5 20 Min. Typ. 400 - 410 22.5 0.012 13 7 30.5 31 43 7 485 10 41 27.5 0.02 19 Max. Min. Typ. 450 - 496 21.5 0.012 15 8 30.5 31 44 7 485 10 45 27 0.02 13 Max. Min. Typ. 810 - 960 15.5 0.012 9 12 30 31 48 7 485 10 45 28 0.02 7.5 Max. Min. Typ. Max. Min. Typ. Max. Units MHz dB 0.02 dB/C dB dB dBm dBm dBm dB mA mA 1710 - 1990 10 0.012 17 15 31 31.5 48 7 485 10 45 28 0.02 6.5 2010 - 2170 9 0.012 11 20 31 32.5 48 7.5 485 10 [1] Specifications and data reflect HMC452QS16G measured using the respective application circuits for each designated frequency band found herein. Contact the HMC Applications Group for assistance in optimizing performance for your application. [2] Two-tone input power of -10 dBm per tone, 1 MHz spacing. 5 - 252 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC452QS16G / 452QS16GE v01.0205 InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz Broadband Gain & Return Loss @ 400 MHz 25 20 15 RESPONSE (dB) Gain vs. Temperature @ 400 MHz 25 24 23 22 21 20 19 18 17 16 15 14 13 12 0.35 5 AMPLIFIERS - SMT 5 - 253 S11 5 0 -5 -10 -15 0.1 S22 GAIN (dB) 10 S21 +25 C +85 C -40 C 0.2 0.3 0.4 0.5 0.6 0.7 0.37 0.39 0.41 0.43 0.45 FREQUENCY (GHz) FREQUENCY (GHz) Input Return Loss vs. Temperature @ 400 MHz 0 -2 RETURN LOSS (dB) Output Return Loss vs. Temperature @ 400 MHz 0 -2 RETURN LOSS (dB) -4 -6 -8 -10 -12 -14 -16 0.35 +25 C +85 C -40 C -4 -6 -8 -10 -12 -14 -16 0.35 +25 C +85 C -40 C 0.37 0.39 0.41 0.43 0.45 0.37 0.39 0.41 0.43 0.45 FREQUENCY (GHz) FREQUENCY (GHz) P1dB vs. Temperature @ 400 MHz 34 33 32 31 P1dB (dBm) 30 29 28 27 26 25 24 0.35 0.37 0.39 0.41 0.43 0.45 +25 C +85 C -40 C Psat vs. Temperature @ 400 MHz 34 33 32 31 Psat (dBm) 30 29 28 27 26 25 24 0.35 0.37 0.39 0.41 0.43 0.45 +25 C +85 C -40 C FREQUENCY (GHz) FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC452QS16G / 452QS16GE v01.0205 InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz 5 AMPLIFIERS - SMT Output IP3 vs. Temperature @ 400 MHz 50 48 46 44 OIP3 (dBm) 42 40 38 36 34 32 30 0.35 0.37 0.39 0.41 0.43 0.45 +25 C +85 C -40 C Noise Figure vs. Temperature @ 400 MHz 10 9 8 NOISE FIGURE (dB) 7 6 5 +25 C 4 3 2 1 0 0.35 0.37 0.39 +85 C -40 C 0.41 0.43 0.45 FREQUENCY (GHz) FREQUENCY (GHz) Reverse Isolation vs. Temperature @ 400 MHz 0 -5 ISOLATION (dB) -10 -15 -20 -25 -30 -35 0.35 +25 C +85 C -40 C Gain, Power & IP3 vs. Supply Voltage @ 400 MHz GAIN (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm) 50 45 40 35 30 25 20 15 10 4.5 Gain P1dB Psat OIP3 0.37 0.39 0.41 0.43 0.45 4.75 5 Vs (Vdc) 5.25 5.5 FREQUENCY (GHz) Power Compression @ 400 MHz 55 Pout (dBm), Gain (dB), PAE (%) 50 45 40 35 30 25 20 15 10 5 0 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 Pout Gain PAE ACPR vs. Supply Voltage @ 400 MHz W-CDMA , 64 DPCH -10 -15 -20 -25 ACPR (dBc) -30 -35 -40 -45 -50 -55 -60 -65 -70 8 10 12 14 16 18 Source ACPR W-CDMA Frequency: 400 MHz Integration BW: 3.84 MHz 64 DPCH 4.5V 5V 5.5V 20 22 24 26 28 INPUT POWER (dBm) Channel Power (dBm) 5 - 254 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC452QS16G / 452QS16GE v01.0205 InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz Broadband Gain & Return Loss @ 470 MHz 25 20 15 RESPONSE (dB) GAIN (dB) 10 5 0 -5 -10 -15 0.1 S21 S11 S22 Gain vs. Temperature @ 470 MHz 24 23 22 21 20 19 18 17 16 15 14 13 12 0.43 +25 C +85 C -40 C 5 AMPLIFIERS - SMT 5 - 255 0.2 0.3 0.4 0.5 0.6 0.7 0.45 0.47 0.49 0.51 0.53 FREQUENCY (GHz) FREQUENCY (GHz) Input Return Loss vs. Temperature @ 470 MHz 0 -2 -4 RETURN LOSS (dB) -6 -8 -10 -12 -14 -16 -18 -20 0.43 0.45 0.47 0.49 0.51 0.53 +25 C +85 C -40 C Output Return Loss vs. Temperature @ 470 MHz 0 -2 RETURN LOSS (dB) -4 -6 -8 -10 -12 -14 -16 0.43 +25 C +85 C -40 C 0.45 0.47 0.49 0.51 0.53 FREQUENCY (GHz) FREQUENCY (GHz) P1dB vs. Temperature @ 470 MHz 34 33 32 31 P1dB (dBm) 30 29 28 27 26 25 24 0.43 0.45 0.47 0.49 0.51 0.53 +25 C +85 C -40 C Psat vs. Temperature @ 470 MHz 34 33 32 31 Psat (dBm) 30 29 28 27 26 25 24 0.43 0.45 0.47 0.49 0.51 0.53 +25 C +85 C -40 C FREQUENCY (GHz) FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC452QS16G / 452QS16GE v01.0205 InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz 5 AMPLIFIERS - SMT Output IP3 vs. Temperature @ 470 MHz 50 48 46 44 OIP3 (dBm) 42 40 38 36 34 32 30 0.43 0.45 0.47 0.49 0.51 0.53 +25 C +85 C -40 C Noise Figure vs. Temperature @ 470 MHz 10 9 8 NOISE FIGURE (dB) 7 6 5 4 3 2 1 0 0.43 0.45 0.47 0.49 0.51 0.53 +25 C +85 C -40 C FREQUENCY (GHz) FREQUENCY (GHz) Reverse Isolation vs. Temperature @ 470 MHz 0 -5 -10 ISOLATION (dB) -15 -20 -25 -30 -35 -40 0.2 +25 C +85 C -40 C Gain, Power & IP3 vs. Supply Voltage @ 470 MHz GAIN (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm) 50 45 40 35 30 25 20 15 10 4.5 Gain P1dB Psat OIP3 0.25 0.3 0.35 0.4 0.45 0.5 0.55 0.6 4.75 5 Vs (Vdc) 5.25 5.5 FREQUENCY (GHz) Power Compression @ 470 MHz 55 Pout (dBm), Gain (dB), PAE (%) 50 45 40 35 30 25 20 15 10 5 0 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 Pout Gain PAE ACPR vs. Supply Voltage @ 470 MHz W-CDMA, 64 DPCH -10 -15 -20 -25 ACPR (dBc) -30 -35 -40 -45 -50 -55 -60 -65 -70 8 10 12 14 16 18 Source ACPR 4.5V 5V 5.5V W-CDMA Frequency: 470 MHz Integration BW: 3.84 MHz 64 DPCH 20 22 24 26 28 INPUT POWER (dBm) Channel Power (dBm) 5 - 256 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC452QS16G / 452QS16GE v01.0205 InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz Broadband Gain & Return Loss @ 900 MHz 20 15 10 RESPONSE (dB) Gain vs. Temperature @ 900 MHz 18 17 16 15 GAIN (dB) 5 AMPLIFIERS - SMT 5 - 257 5 0 -5 -10 S21 S11 S22 14 13 12 11 10 +25 C +85 C -40 C -15 -20 0.4 9 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 8 0.7 0.75 0.8 0.85 0.9 0.95 1 1.05 1.1 FREQUENCY (GHz) FREQUENCY (GHz) Input Return Loss vs. Temperature @ 900 MHz 0 -2 Output Return Loss vs. Temperature @ 900 MHz 0 +25 C +85 C -40 C -5 RETURN LOSS (dB) -6 -8 -10 -12 -14 -16 0.7 -25 0.7 RETURN LOSS (dB) -4 +25 C +85 C -40 C -10 -15 -20 0.75 0.8 0.85 0.9 0.95 1 1.05 1.1 0.75 0.8 0.85 0.9 0.95 1 1.05 1.1 FREQUENCY (GHz) FREQUENCY (GHz) P1dB vs. Temperature @ 900 MHz 34 32 30 P1dB (dBm) Psat vs. Temperature @ 900 MHz 34 32 30 Psat (dBm) 28 26 24 22 20 18 0.7 +25 C +85 C -40 C 28 26 24 22 20 18 0.7 +25 C +85 C -40 C 0.75 0.8 0.85 0.9 0.95 1 1.05 1.1 0.75 0.8 0.85 0.9 0.95 1 1.05 1.1 FREQUENCY (GHz) FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC452QS16G / 452QS16GE v01.0205 InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz 5 AMPLIFIERS - SMT Output IP3 vs. Temperature @ 900 MHz 50 48 46 44 OIP3 (dBm) 42 40 38 36 34 32 30 0.75 0.8 0.85 0.9 0.95 1 +25 C +85 C -40 C Noise Figure vs. Temperature @ 900 MHz 10 9 8 NOISE FIGURE (dB) 7 6 5 4 3 2 1 0 0.7 0.75 0.8 0.85 0.9 0.95 1 1.05 1.1 +25 C +85 C -40 C FREQUENCY (GHz) FREQUENCY (GHz) Reverse Isolation vs. Temperature @ 900 MHz 0 -5 ISOLATION (dB) -10 -15 -20 -25 -30 0.7 Gain, Power & IP3 vs. Supply Voltage @ 900 MHz GAIN (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm) 50 45 40 35 30 25 20 15 10 4.5 Gain P1dB Psat OIP3 +25 C +85 C -40 C 0.75 0.8 0.85 0.9 0.95 1 1.05 1.1 4.75 5 Vs (Vdc) 5.25 5.5 FREQUENCY (GHz) Gain, Power & IP3 vs. Supply Current @ 900 MHz* GAIN (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm) 55 50 45 ACPR vs. Supply Voltage @ 910 MHz CDMA IS95, 9 Channels Forward -25 -30 -35 ACPR (dBc) Gain P1dB Psat OIP3 CDMA IS95 Frequency: 910 MHz Integration BW: 1.228 MHz Forward Link, 9 Channels 40 35 30 25 20 15 10 250 -40 -45 5V 4.5V 5.5V -50 -55 -60 -65 Source ACPR -70 300 350 400 Icq (mA) 450 500 12 14 16 18 20 22 24 26 28 Channel Power (dBm) * Icq is controlled by varying VPD. 5 - 258 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC452QS16G / 452QS16GE v01.0205 InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz Broadband Gain & Return Loss @ 1900 MHz 15 10 5 RESPONSE (dB) 0 -5 -10 -15 -20 -25 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 FREQUENCY (GHz) S21 S11 S22 Gain vs. Temperature @ 1900 MHz 13 12 11 10 9 8 7 6 5 4 3 2 1 0 1.7 5 AMPLIFIERS - SMT 5 - 259 GAIN (dB) +25 C +85 C -40 C 1.8 1.9 FREQUENCY (GHz) 2 2.1 Input Return Loss vs. Temperature @ 1900 MHz 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 -35 -40 1.7 +25 C +85 C -40 C Output Return Loss vs. Temperature @ 1900 MHz 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 1.7 +25 C +85 C -40 C 1.8 1.9 FREQUENCY (GHz) 2 2.1 1.8 1.9 FREQUENCY (GHz) 2 2.1 P1dB vs. Temperature @ 1900 MHz 34 33 32 31 P1dB (dBm) 30 29 28 27 26 25 24 1.7 1.8 1.9 FREQUENCY (GHz) 2 2.1 +25 C +85 C -40 C Psat vs. Temperature @ 1900 MHz 34 33 32 31 Psat (dBm) 30 29 28 27 26 25 24 1.7 1.8 1.9 FREQUENCY (GHz) 2 2.1 +25 C +85 C -40 C For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC452QS16G / 452QS16GE v01.0205 InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz Noise Figure vs. Temperature @ 1900 MHz 10 9 8 NOISE FIGURE (dB) 7 6 5 4 +25 C 5 AMPLIFIERS - SMT Output IP3 vs. Temperature @ 1900 MHz 52 50 48 46 OIP3 (dBm) 44 42 40 38 36 34 32 30 1.7 1.8 1.9 FREQUENCY (GHz) 2 2.1 +25 C +85 C -40 C 3 2 1 0 1.7 1.8 1.9 +85 C -40 C 2 2.1 FREQUENCY (GHz) Reverse Isolation vs. Temperature @ 1900 MHz 0 Gain, Power & IP3 vs. Supply Voltage @ 1900 MHz GAIN (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm) 55 50 45 40 35 30 25 20 15 10 5 4.5 4.75 5 Vs (Vdc) 5.25 5.5 Gain P1dB Psat OIP3 -5 ISOLATION (dB) +25 C +85 C -40 C -10 -15 -20 1.7 1.8 1.9 FREQUENCY (GHz) 2 2.1 Gain, Power & IP3 vs. Supply Current @ 1900 MHz* GAIN (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm) 50 45 40 ACPR vs. Supply Voltage @ 1960 MHz CDMA 2000, 9 Channels Forward -25 -30 -35 ACPR (dBc) -40 -45 -50 -55 -60 -65 Source ACPR -70 4.5V 5V 5.5V CDMA2000 Frequency: 1.96 GHz Integration BW: 1.228 MHz Forward Link, SR1, 9 Channels 35 30 25 20 15 10 5 250 Gain P1dB Psat OIP3 300 350 400 Icq (mA) 450 500 14 16 18 20 22 24 26 28 Channel Power (dBm) * Icq is controlled by varying VPD. 5 - 260 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC452QS16G / 452QS16GE v01.0205 InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz Broadband Gain & Return Loss @ 2100 MHz 15 10 5 RESPONSE (dB) 0 -5 -10 -15 -20 -25 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 FREQUENCY (GHz) S21 S11 S22 Gain vs. Temperature @ 2100 MHz 13 12 11 10 9 8 7 6 5 4 3 2 1 0 1.9 5 AMPLIFIERS - SMT 5 - 261 GAIN (dB) +25C +85C -40C 2 2.1 FREQUENCY (GHz) 2.2 2.3 Input Return Loss vs. Temperature @ 2100 MHz 0 -2 RETURN LOSS (dB) Output Return Loss vs. Temperature @ 2100 MHz 0 -5 RETURN LOSS (dB) -4 -6 -8 -10 -12 -14 -16 1.9 +25C +85C -40C -10 -15 -20 -25 -30 1.9 +25C +85C -40C 2 2.1 FREQUENCY (GHz) 2.2 2.3 2 2.1 FREQUENCY (GHz) 2.2 2.3 P1dB vs. Temperature @ 2100 MHz 34 33 32 31 P1dB (dBm) 30 29 28 27 26 25 24 1.9 2 2.1 FREQUENCY (GHz) 2.2 2.3 +25C +85C -40C Psat vs. Temperature @ 2100 MHz 34 33 32 31 Psat (dBm) 30 29 28 27 26 25 24 1.9 2 2.1 FREQUENCY (GHz) 2.2 2.3 +25C +85C -40C For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC452QS16G / 452QS16GE v01.0205 InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz 5 AMPLIFIERS - SMT Output IP3 vs. Temperature @ 2100 MHz 54 52 50 Noise Figure vs. Temperature @ 2100 MHz 10 9 8 NOISE FIGURE (dB) 7 6 5 4 3 2 1 +25C +85C -40C 48 OIP3 (dBm) 46 44 42 40 38 36 34 32 30 1.9 2 2.1 FREQUENCY (GHz) 2.2 2.3 +25C +85C -40C 0 1.9 2 2.1 FREQUENCY (GHz) 2.2 2.3 Reverse Isolation vs. Temperature @ 2100 MHz 0 Gain, Power & IP3 vs. Supply Voltage @ 2100 MHz GAIN (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm) 55 50 45 40 35 30 25 20 15 10 5 4.5 4.75 5 Vs (Vdc) 5.25 5.5 Gain P1dB Psat OIP3 -5 ISOLATION (dB) +25C +85C -40C -10 -15 -20 1.9 2 2.1 FREQUENCY (GHz) 2.2 2.3 Power Compression @ 2100 MHz 55 Pout (dBm), Gain (dB), PAE (%) 50 45 40 35 Pout Gain PAE ACPR vs. Supply Voltage @ 2140 MHz W-CDMA, 64 DPCH -20 -25 -30 ACPR (dBc) -35 -40 -45 -50 -55 -60 Source ACPR -65 12 14 16 18 20 22 24 26 28 5.5V W-CDMA Frequency: 2.14 GHz Integration BW: 3.84 MHz 64 DPCH 4.5V 5V 30 25 20 15 10 5 0 10 12 14 16 18 20 22 24 26 28 INPUT POWER (dBm) 5 - 262 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC452QS16G / 452QS16GE v01.0205 InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz Power Dissipation 3 Max Pdiss @ +85C Absolute Maximum Ratings Collector Bias Voltage (Vcc) Control Voltage (Vpd) RF Input Power (RFin)(Vs = Vpd = +5.0 Vdc) 1900 MHz 5 +5.3 Vdc +31 dBm 150 °C 2.7 W 24.1 °C/W -65 to +150 °C -40 to +85 °C Class 1A 2.5 Junction Temperature 2 Continuous Pdiss (T = 85 °C) (derate 41.5 mW/°C above 85 °C) Thermal Resistance (junction to ground paddle) 900 MHz 1.5 Storage Temperature Operating Temperature 1 -5 0 5 10 15 20 ESD Sensitivity (HBM) INPUT POWER (dBm) ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 5. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. Package Information Part Number HMC452QS16G HMC452QS16GE Package Body Material Low Stress Injection Molded Plastic RoHS-compliant Low Stress Injection Molded Plastic Lead Finish Sn/Pb Solder 100% matte Sn MSL Rating MSL1 MSL1 [1] Package Marking [3] H452 XXXX H452 XXXX [2] [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 5 - 263 AMPLIFIERS - SMT +6.0 Vdc POWER DISSIPATION (W) HMC452QS16G / 452QS16GE v01.0205 InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz 5 AMPLIFIERS - SMT Pin Descriptions Pin Number 1, 2, 4, 5, 7-10, 13-16 Function Description These pins & package bottom must be connected to RF/DC ground. Interface Schematic GND 3 VPD Power control pin. For maximum power, this pin should be connected to 5.0V. A higher voltage is not recommended. For lower idle current, this voltage can be reduced. 6 RFIN This pin is DC coupled. Off chip matching components are required. See Application Circuit herein. RF output and DC Bias input for the output amplifier stage. Off chip matching components are required. See Application Circuit herein. 11, 12 RFOUT 400 MHz Application Circuit This circuit was used to specify the performance for 400-410 MHz operation. Contact the HMC Applications Group for assistance in optimizing performance for your application. Recommended Component Values C1, C2 C3, C7 C4, C5 12 pF 100 pF 6.8 pF 39 pF 2.2 μF 47 nH 40 nH 4.7 nH 5.6 nH 5.1 Ohms Note: C3 should be placed as close to pins as possible. TL1 Impedance Physical Length Electrical Length 50 Ohm 0.11” 3° TL2 50 Ohm 0.06” 2° TL3 50 Ohm 0.12” 3° TL4 50 Ohm 0.04” 1° TL5 50 Ohm 0.16” 4° C6 C8, C9 L1 L2 L3 L4 R1 PCB Material: 10 mil Rogers 4350, Er = 3.48 5 - 264 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC452QS16G / 452QS16GE v01.0205 InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz 400 MHz Evaluation PCB 5 AMPLIFIERS - SMT List of Materials for Evaluation PCB 110380-400 [1] Item J1 - J2 J3 C1, C2 C3, C7 C4, C5 C6 C8, C9 L1 L2 L3 L4 R1 U1 PCB [2] Description PCB Mount SMA Connector 2 mm DC Header 12 pF Capacitor, 0402 Pkg. 100 pF Capacitor, 0402 Pkg. 6.8 pF Capacitor, 0402 Pkg. 39 pF Capacitor, 0402 Pkg. 2.2 μF Capacitor, Tantalum 47 nH Inductor, 0603 Pkg. 40 nH Inductor, 0402 Pkg. 4.7 nH Inductor, 0402 Pkg. 5.6 nH Inductor, 0402 Pkg. 5.1 Ohm Resistor, 0402 Pkg. HMC452QS16G / HMC452QS16GE Linear Amp 110378 Evaluation PCB, 10 mils The circuit board used in this application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of VIA holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350, Er = 3.48 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 5 - 265 HMC452QS16G / 452QS16GE v01.0205 InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz 5 AMPLIFIERS - SMT 470 MHz Application Circuit This circuit was used to specify the performance for 450-496 MHz operation. Contact the HMC Applications Group for assistance in optimizing performance for your application. Note: C3 should be placed as close to pins as possible. TL1 Impedance Physical Length Electrical Length 50 Ohm 0.11” 3° TL2 50 Ohm 0.06” 2° TL3 50 Ohm 0.12” 3° TL4 50 Ohm 0.04” 1° TL5 50 Ohm 0.16” 4° Recommended Component Values C1, C2 C3, C7 C4 C5 C6 C8, C9 L1 L2 L3 L4 R1 12 pF 100 pF 6.8 pF 5.6 pF 39 pF 2.2 μF 47 nH 40 nH 3.9 nH 4.3 nH 5.1 Ohms PCB Material: 10 mil Rogers 4350, Er = 3.48 5 - 266 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC452QS16G / 452QS16GE v01.0205 InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz 470 MHz Evaluation PCB 5 AMPLIFIERS - SMT List of Materials for Evaluation PCB 110381-470 [1] Item J1 - J2 J3 C1, C2 C3, C7 C4 C5 C6 C8, C9 L1 L2 L3 L4 R1 U1 PCB [2] Description PCB Mount SMA Connector 2 mm DC Header 12 pF Capacitor, 0402 Pkg. 100 pF Capacitor, 0402 Pkg. 6.8 pF Capacitor, 0402 Pkg. 5.6 pF Capacitor, 0402 Pkg. 39 pF Capacitor, 0402 Pkg. 2.2 μF Capacitor, Tantalum 47 nH Inductor, 0603 Pkg. 40 nH Inductor, 0402 Pkg. 3.9 nH Inductor, 0402 Pkg. 4.3 nH Inductor, 0402 Pkg. 5.1 Ohm Resistor, 0402 Pkg. HMC452QS16G / HMC452QS16GE Linear Amp 110378 Evaluation PCB, 10 mils The circuit board used in this application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of VIA holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350, Er = 3.48 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 5 - 267 HMC452QS16G / 452QS16GE v01.0205 InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz 5 AMPLIFIERS - SMT 900 MHz Application Circuit This circuit was used to specify the performance for 810-960 MHz operation. Contact the HMC Applications Group for assistance in optimizing performance for your application. Note: C3 should be placed as close to pins as possible. TL1 Impedance Physical Length Electrical Length 50 Ohm 0.21” 11° TL2 50 Ohm 0.19” 10° TL3 50 Ohm 0.23” 12° Recommended Component Values C1 C2, C6 C3, C7 C4 C5 C8, C9 L1, L2 R1 10 pF 5.6 pF 100 pF 2.2 pF 5 pF 2.2 μF 20 nH 5.6 Ohm PCB Material: 10 mil Rogers 4350, Er = 3.48 5 - 268 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC452QS16G / 452QS16GE v01.0205 InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz 900 MHz Evaluation PCB 5 AMPLIFIERS - SMT List of Materials for Evaluation PCB 108715-900 Item J1 - J2 J3 C1 C2, C6 C3, C7 C4 C5 C8, C9 L1, L2 R1 U1 PCB [2] Description PCB Mount SMA Connector 2 mm DC Header 10 pF Capacitor, 0402 Pkg. 5.6 pF Capacitor, 0402 Pkg. 100 pF Capacitor, 0402 Pkg. 2.2 pF Capacitor, 0402 Pkg. 5 pF Capacitor, 0402 Pkg. 2.2 μF Capacitor, Tantalum 20 nH Inductor, 0402 Pkg. 5.6 Ohm Resistor, 0402 Pkg. HMC452QS16G / HMC452QS16GE Linear Amp 108713 Evaluation PCB, 10 mils [1] The circuit board used in this application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of VIA holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350, Er = 3.48 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 5 - 269 HMC452QS16G / 452QS16GE v01.0205 InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz 5 AMPLIFIERS - SMT 1900 MHz Application Circuit This circuit was used to specify the performance for 1710-1990 MHz operation. Contact the HMC Applications Group for assistance in optimizing performance for your application. Note: C2, C3 and C4 should be placed as close to pins as possible. TL1 Impedance Physical Length Electrical Length 50 Ohm 0.04” 4° TL2 50 Ohm 0.08” 9° Recommended Component Values C1 C2 C3, C5, C6 C4 C7, C8 L1, L2 R1 2.7 pF 2 pF 100 pF 3.3 pF 2.2 μF 20 nH 5.6 Ohms PCB Material: 10 mil Rogers 4350, Er = 3.48 5 - 270 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC452QS16G / 452QS16GE v01.0205 InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz 1900 MHz Evaluation PCB 5 AMPLIFIERS - SMT List of Materials for Evaluation PCB 108703-1900 [1] Item J1 - J2 J3 C1 C2 C3, C5, C6 C4 C7, C8 L1, L2 R1 U1 PCB [2] Description PCB Mount SMA Connector 2 mm DC Header 2.7 pF Capacitor, 0402 Pkg. 2 pF Capacitor, 0402 Pkg. 100 pF Capacitor, 0402 Pkg. 3.3 pF Capacitor, 0402 Pkg. 2.2 μF Capacitor, Tantalum 20 nH Inductor, 0402 Pkg. 5.6 Ohm Resistor, 0402 Pkg. HMC452QS16G / HMC452QS16GE Linear Amp 108701 Evaluation PCB, 10 mils The circuit board used in this application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of VIA holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350, Er = 3.48 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 5 - 271 HMC452QS16G / 452QS16GE v01.0205 InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz 5 AMPLIFIERS - SMT 2100 MHz Application Circuit This circuit was used to specify the performance for 2010-2170 MHz operation. Contact the HMC Applications Group for assistance in optimizing performance for your application. Note: C2, C3 and C4 should be placed as close to pins as possible. TL1 Impedance Physical Length Electrical Length 50 Ohm 0.04” 5° TL2 50 Ohm 0.08” 10° Recommended Component Values C1 C2 C3, C6 C4 C5 C7, C8 L1 L2 R1 4.7 pF 2 pF 100 pF 3.3 pF 15 pF 2.2 μF 12 nH 10 nH 5.1 Ohms PCB Material: 10 mil Rogers 4350, Er = 3.48 5 - 272 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC452QS16G / 452QS16GE v01.0205 InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz 2100 MHz Evaluation PCB 5 AMPLIFIERS - SMT List of Materials for Evaluation PCB 111041-2100 Item J1 - J2 J3 C1 C2 C3, C6 C4 C5 C7, C8 L1 L2 R1 U1 PCB [2] Description PCB Mount SMA Connector 2 mm DC Header 4.7 pF Capacitor, 0402 Pkg. 2 pF Capacitor, 0402 Pkg. 100 pF Capacitor, 0402 Pkg. 3.3 pF Capacitor, 0402 Pkg. 15 pF Capacitor, 0402 Pkg. 2.2 μF Capacitor, Tantalum 12 nH Inductor, 0402 Pkg. 10 nH Inductor, 0402 Pkg. 5.1 Ohm Resistor, 0402 Pkg. HMC452QS16G / HMC452QS16GE Linear Amp 111039 Evaluation PCB, 10 mils [1] The circuit board used in this application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of VIA holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350, Er = 3.48 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 5 - 273