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719LP4E

719LP4E

  • 厂商:

    HITTITE

  • 封装:

  • 描述:

    719LP4E - GaAs PHEMT MMIC HIGH IP3 LOW NOISE AMPLIFIER, 1.3 - 2.9 GHz - Hittite Microwave Corporatio...

  • 数据手册
  • 价格&库存
719LP4E 数据手册
HMC719LP4 / 719LP4E v04.0610 GaAs PHEMT MMIC HIGH IP3 LOW NOISE AMPLIFIER, 1.3 - 2.9 GHz Features Noise figure: 1.0 dB Gain: 34 dB output ip3: +39 dBm single supply: +3V to +5V 50 ohm matched input/output 24 lead 4x4 mm smT package: 16 mm2 7 Amplifiers - low Noise - smT Typical Applications The HmC719lp4(e) is ideal for: • Cellular/3G and lTe/wimAX/4G • BTs & infrastructure • repeaters and femtocells • Access points • Test equipment & military Functional Diagram General Description The HmC719lp4(e) is a GaAs pHemT mmiC low Noise Amplifier that is ideal for Cellular/3G and lTe/wimAX/4G basestation front-end receivers operating between 1.3 and 2.9 GHz. The amplifier has been optimized to provide 1.0 dB noise figure, 34 dB gain and +39 dBm output ip3 from a single supply of +5V. input and output return losses are excellent and the lNA requires minimal external matching and bias decoupling components. The HmC719lp4(e) shares the same package and pinout with the HmC718lp3(e) 600 - 1400 mHz lNA. The HmC719lp4(e) can be biased with +3V to +5V and features an externally adjustable supply current which allows the designer to tailor the linearity performance of the lNA for each application. Electrical Specifications, TA = +25°C, Rbias = 1.5k Ohms* parameter frequency range Gain Gain Variation over Temperature Noise figure input return loss output return loss output power for 1 dB Compression (p1dB) saturated output power (psat) output Third order intercept (ip3) Total supply Current (idd) 12.5 27 Vdd = +3V min. Typ. 1.3 - 2.2 32 0.02 1.0 16 10.5 15.5 18 32 187 220 12.5 1.3 22 max. min. Typ. 2.2 - 2.9 26.5 0.02 1.3 13.5 9.5 15.5 18.5 31 187 220 18 1.6 29 max. min. Typ. 1.3 - 2.2 35 0.02 0.95 17.5 13.5 21.5 23 39 272 315 18 1.2 24 Vdd = +5V max. min. Typ. 2.2 - 2.9 28 0.02 1.25 16.5 11.5 21.5 23 39 272 315 1.6 max. Units GHz dB dB/ °C dB dB dB dBm dBm dBm mA * rbias resistor sets current, see application circuit herein, Vdd = Vdd1 = Vdd2 7-1 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC719LP4 / 719LP4E v04.0610 GaAs PHEMT MMIC HIGH IP3 LOW NOISE AMPLIFIER, 1.3 - 2.9 GHz Gain vs. Temperature [1] 40 Broadband Gain & Return Loss [1] [2] 40 S21 7 Amplifiers - low Noise - smT 7-2 30 20 RESPONSE (dB) GAIN (dB) 10 0 -10 -20 -30 -40 0.5 S22 Vdd=5V Vdd=3V 35 S11 30 25 +25C +85C -40C 0.8 1.1 1.4 1.7 2 2.3 2.6 FREQUENCY (GHz) 2.9 3.2 3.5 20 1.2 1.5 1.8 2.1 2.4 FREQUENCY (GHz) 2.7 3 Gain vs. Temperature [2] 40 Input Return Loss vs. Temperature [1] 0 -5 RETURN LOSS (dB) 35 GAIN (dB) -10 -15 -20 -25 -30 1.2 +25C +85C -40C 30 25 +25C +85C -40C 20 1.2 1.5 1.8 2.1 2.4 FREQUENCY (GHz) 2.7 3 1.5 1.8 2.1 2.4 FREQUENCY (GHz) 2.7 3 Output Return Loss vs. Temperature [1] 0 Reverse Isolation vs. Temperature [1] 0 RETURN LOSS (dB) -5 -10 ISOLATION (dB) +25C +85C -40C -20 +25C +85C -40C -40 -15 -60 -20 1.2 1.5 1.8 2.1 2.4 FREQUENCY (GHz) 2.7 3 -80 1.2 1.5 1.8 2.1 2.4 FREQUENCY (GHz) 2.7 3 [1] Vdd = 5V, rbias = 1.5K [2] Vdd = 3V, rbias = 1.5K F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC719LP4 / 719LP4E v04.0610 GaAs PHEMT MMIC HIGH IP3 LOW NOISE AMPLIFIER, 1.3 - 2.9 GHz P1dB vs. Temperature [1] [2] 26 24 Vdd=5V 7 Amplifiers - low Noise - smT Noise Figure vs. Temperature [1] [2] 2 1.8 NOISE FIGURE (dB) 1.6 1.4 1.2 1 0.8 0.6 0.4 1.2 1.5 1.8 2.1 2.4 2.7 3 FREQUENCY (GHz) +25C -40C +85C Vdd=5V Vdd=3V 22 P1dB (dBm) 20 18 16 14 12 1.2 Vdd=3V +25C +85C -40C 1.5 1.8 2.1 2.4 2.7 3 FREQUENCY (GHz) Psat vs. Temperature [1] [2] 26 24 22 P1dB (dBm) 20 18 16 14 12 1.2 Vdd=3V +25C +85C -40C Output IP3 vs. Temperature [1] [2] 50 +25C +85C -40C 45 Vdd=5V IP3 (dBm) Vdd=5V 40 Vdd=3V 35 30 1.5 1.8 2.1 2.4 2.7 3 25 1.2 1.5 FREQUENCY (GHz) 1.8 2.1 2.4 FREQUENCY (GHz) 2.7 3 Output IP3 and Idd vs. Supply Voltage @ 1700 MHz [3] 45 40 35 IP3 (dBm) 30 25 20 15 2.7 Idd1 Idd2 IP3 Output IP3 and Idd vs. Supply Voltage @ 2200 MHz [3] 300 250 200 IP3 (dBm) Idd (mA) 150 100 50 0 5.5 45 40 35 30 25 20 15 2.7 Idd1 Idd2 IP3 300 250 200 Idd (mA) 150 100 50 0 3.1 3.5 3.9 4.3 4.7 5.1 5.5 VOLTAGE SUPPLY (V) 3.1 3.5 3.9 4.3 4.7 5.1 VOLTAGE SUPPLY (V) [1] Vdd = 5V, rbias = 1.5K [2] Vdd = 3V, rbias = 1.5K [3] rbias = 1.5K 7-3 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC719LP4 / 719LP4E v04.0610 GaAs PHEMT MMIC HIGH IP3 LOW NOISE AMPLIFIER, 1.3 - 2.9 GHz Power Compression @ 1700 MHz [2] 40 Pout (dBm), Gain (dB), PAE (%) 35 30 25 20 15 10 5 0 -5 -30 -27 -24 -21 -18 INPUT POWER (dBm) -15 -12 Pout Gain PAE Power Compression @ 1700 MHz [1] 40 Pout (dBm), Gain (dB), PAE (%) 35 30 25 20 15 10 5 0 -5 -29 -26 -23 -20 -17 -14 INPUT POWER (dBm) -11 -8 Pout Gain PAE 7 Amplifiers - low Noise - smT NOISE FIGURE (dB) Power Compression @ 2200 MHz [1] 35 Pout (dBm), Gain (dB), PAE (%) 30 25 20 15 10 5 0 -5 -30 -27 -24 -21 -18 -15 -12 INPUT POWER (dBm) -9 -6 -3 Pout Gain PAE Power Compression @ 2200 MHz [2] 35 Pout (dBm), Gain (dB), PAE (%) 30 25 20 15 10 5 0 -5 -30 -27 -24 -21 -18 -15 INPUT POWER (dBm) -12 -9 Pout Gain PAE Gain, Power & Noise Figure vs. Supply Voltage @ 1700 MHz [3] 45 40 Gain (dB) & P1dB (dBm) 35 30 25 20 15 10 2.7 P1dB Gain NF Gain, Power & Noise Figure vs. Supply Voltage @ 2200 MHz [3] 1.5 1.4 1.3 1.2 1.1 1 0.9 0.8 Gain (dB) & P1dB (dBm) NOISE FIGURE (dB) 45 40 35 30 25 20 15 10 2.7 P1dB Gain NF 1.5 1.4 1.3 1.2 1.1 1 0.9 0.8 3.1 3.5 3.9 4.3 4.7 VOLTAGE SUPPLY (V) 5.1 5.5 3.1 3.5 3.9 4.3 4.7 VOLTAGE SUPPLY (V) 5.1 5.5 [1] Vdd = 5V, rbias = 1.5K [2] Vdd = 3V, rbias = 1.5K [3] rbias = 1.5K F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 7-4 HMC719LP4 / 719LP4E v04.0610 GaAs PHEMT MMIC HIGH IP3 LOW NOISE AMPLIFIER, 1.3 - 2.9 GHz Gain, Noise Figure & Rbias @ 1900 MHz 35 1.8 7 Amplifiers - low Noise - smT Output IP3 vs. Rbias @ 1900 MHz 40 38 33 1.6 NOISE FIGURE (dB) IP3 (dBm) GAIN (dB) 36 31 1.4 34 Vdd=3V Vdd=5V 29 Vdd=3V Vdd=5V 1.2 32 27 1 30 1 10 100 Rbias (Ohms) 1000 10000 25 100 0.8 1000 Rbias (Ohms) 10000 7-5 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC719LP4 / 719LP4E v04.0610 GaAs PHEMT MMIC HIGH IP3 LOW NOISE AMPLIFIER, 1.3 - 2.9 GHz Absolute Bias Resistor Range & Recommended Bias Resistor Values for Idd Vdd (V) rbias Ω min max recommended 1k 3V 1K [1] open Circuit 1.5k 10k 120 5V 0 open Circuit 470 1.5k idd1 (mA) 27 33 46 70 88 104 idd2 (mA) 154 154 154 168 168 168 7 Amplifiers - low Noise - smT 7-6 [1] operation with Vdd= 3V and rbias < 1K ohm may result in the part becoming conditionally stable which is not recommended. Absolute Maximum Ratings Drain Bias Voltage (Vdd) rf input power (rfiN) (Vdd = +5 Vdc) Channel Temperature Continuous pdiss (T= 85 °C) (derate 21.2 mw/°C above 85 °C) Thermal resistance (channel to ground paddle) storage Temperature operating Temperature 5.5 V -5 dBm 175 °C 1.9 w 47.3 °C/w -65 to +150 °C -40 to +85 °C Typical Supply Current vs. Vdd (Rbias = 1.5k) Vdd (V) 2.7 3.0 3.3 4.5 5.0 5.5 idd1 (mA) 22 33 44 87 104 121 idd2 (mA) 150 154 155 163 168 169 Note: Amplifier will operate over full voltage ranges shown above. eleCTrosTATiC seNsiTiVe DeViCe oBserVe HANDliNG preCAUTioNs F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC719LP4 / 719LP4E v04.0610 GaAs PHEMT MMIC HIGH IP3 LOW NOISE AMPLIFIER, 1.3 - 2.9 GHz 7 Amplifiers - low Noise - smT Outline Drawing NoTes: 1. leADfrAme mATeriAl: Copper AlloY 2. DimeNsioNs Are iN iNCHes [millimeTers] 3. leAD spACiNG TolerANCe is NoN-CUmUlATiVe 4. pAD BUrr leNGTH sHAll Be 0.15mm mAXimUm. pAD BUrr HeiGHT sHAll Be 0.05mm mAXimUm. 5. pACKAGe wArp sHAll NoT eXCeeD 0.05mm. 6. All GroUND leADs AND GroUND pADDle mUsT Be solDereD To pCB rf GroUND. 7. refer To HiTTiTe AppliCATioN NoTe for sUGGesTeD lAND pATTerN. Package Information part Number HmC719lp4 HmC719lp4e package Body material low stress injection molded plastic roHs-compliant low stress injection molded plastic lead finish sn/pb solder 100% matte sn msl rating msl1 msl1 [1] package marking [3] H719 XXXX H719 XXXX [2] [1] max peak reflow temperature of 235 °C [2] max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX 7-7 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC719LP4 / 719LP4E v04.0610 GaAs PHEMT MMIC HIGH IP3 LOW NOISE AMPLIFIER, 1.3 - 2.9 GHz Pin Descriptions pin Number 1, 3 - 5, 7 - 16, 18, 20, 22 function N/C Description No connection necessary. These pins may be connected to rf/DC ground without affecting performance. interface schematic 7 This pin is DC coupled and matched to 50 ohms. 2 rfiN 6 res This pin is used to set the DC current of the amplifier by selection of external bias resistor. see application circuit. 17 rfoUT rf output and DC BiAs for the second amplifier. see Application Circuit for off-chip components. 19 rfiN2 This pin is DC coupled. An off-chip DC blocking capacitor is required. 21 rfoUT1 This pin is matched to 50 ohms. 23, 24 Vdd1, 2 power supply Voltage for the first amplifier. external bypass capacitors are required. see application circuit. F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 7-8 Amplifiers - low Noise - smT HMC719LP4 / 719LP4E v04.0610 GaAs PHEMT MMIC HIGH IP3 LOW NOISE AMPLIFIER, 1.3 - 2.9 GHz 7 Amplifiers - low Noise - smT 7-9 Application Circuit F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC719LP4 / 719LP4E v04.0610 GaAs PHEMT MMIC HIGH IP3 LOW NOISE AMPLIFIER, 1.3 - 2.9 GHz Evaluation PCB 7 Amplifiers - low Noise - smT List of Materials for Evaluation PCB 121242 item J1 - J3 J4 - J5 C1, C8, C12 C3 C4, C7, C11 C5, C6, C13 C10 l2 l3 l4 r1 r2, r3 U1 pCB [2] Description pCB mount smA Connector 2mm Vertical molex Connector 220 pf Capacitor, 0402 pkg. 10 nf Capacitor, 0402 pkg. 10 nf Capacitor, 0603 pkg. 1000 pf Capacitor, 0603 pkg. 4.7 uf Capacitor, 0805 pkg. 22 nH inductor, 0402 pkg. 6.8 nH inductor, 0603 pkg. 47 nH inductor, 0603 pkg. 1.5 kohm rbias resistor, 0402 pkg. 0 ohm resistor, 0402 pkg. HmC719lp4(e) Amplifier 121126 evaluation pCB [1] The circuit board used in this application should use rf circuit design techniques. signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. [1] reference this number when ordering complete evaluation pCB [2] Circuit Board material: Arlon 25rf F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 7 - 10
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