HMC-ABH241

HMC-ABH241 v00.0907 GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 50 - 66 GHz Features Output IP3: +25 dBm P1dB: +17 dBm Gain: 24 dB Supply Voltage: +5 V 50 Ohm Matched Input/Output Die Size: 3.2 x 1.42 x 0.1 mm Typical Applications This HMC-ABH241 is ideal for: • Short Haul / High Capacity Links • Wireless LAN Bridges AMPLIFIERS - LINEAR & POWER - CHIP • Military & Space Functional Diagram General Description The HMC-ABH241 is a four stage GaAs HEMT MMIC Medium Power Amplifier which operates between 50 and 66 GHz. The HMC-ABH241 provides 24 dB of gain, and an output power of +17 dBm at 1dB compression from a +5V supply voltage. All bond pads and the die backside are Ti/Au metallized and the amplifier device is fully passivated for reliable operation. The HMC-ABH241 GaAs HEMT MMIC Medium Power Amplifier is compatible with conventional die attach methods, as well as thermocompression and thermosonic wire bonding, making it ideal for MCM and hybrid microcircuit applications. All data shown herein is measured with the chip in a 50 Ohm environment and contacted with RF probes. Electrical Specifi cations, TA = +25° C, Vdd1= Vdd2= Vdd3= 5V, Idd1 + Idd2 + Idd3= 220 mA [2] Parameter Frequency Range Gain Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Output Third Order Intercept (IP3) Saturated Output Power (Psat) Supply Current (Idd1 + Idd2 + Idd3) [1] Unless otherwise indicated, all measurements are from probed die [2] Adjust Vgg1 = Vgg2 = Vgg3 between -1V to +0.3V (typ -0.3V). 19 Min. Typ. 50 - 66 24 15 15 17 25 19 220 Max. Units GHz dB dB dB dBm dBm dBm mA 0-6 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC-ABH241 v00.0907 GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 50 - 66 GHz Linear Gain vs. Frequency Fixtured Output Power vs. Frequency P3dB P1dB Input Return Loss vs. Frequency Output Return Loss vs. Frequency For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 0-7 AMPLIFIERS - LINEAR & POWER - CHIP HMC-ABH241 v00.0907 GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 50 - 66 GHz Absolute Maximum Ratings Drain Bias Voltage Gain Bias Voltage RF Input Power Storage Temperature +5.5 Vdc -1 to +0.3 Vdc 2 dBm -65 °C to + 150°C +180 °C ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS AMPLIFIERS - LINEAR & POWER - CHIP Chennel Temperature Outline Drawing NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM]. 2. TYPICAL BOND PAD IS .004” SQUARE. 3. BACKSIDE METALLIZATION: GOLD. 4. BACKSIDE METAL IS GROUND. 5. BOND PAD METALLIZATION: GOLD. 6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. 7. OVERALL DIE SIZE ±.002” 0-8 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com