HMC-ALH445

HMC-ALH445 v00.1007 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 18 - 40 GHz Features Noise Figure: 3.9 dB @ 28 GHz Gain: 9 dB P1dB Output Power: +12 dBm @ 28 GHz Supply Voltage: +5V @ 45 mA Die Size: 1.6 x 1.6 x 0.1 mm 1 LOW NOISE AMPLIFIERS - CHIP Typical Applications This HMC-ALH445 is ideal for: • Wideband Communication Systems • Point-to-Point Radios • Point-to-Multi-Point Radios • Military & Space • Test Instrumentation Functional Diagram General Description The HMC-ALH445 is a GaAs MMIC HEMT self-biased, wideband Low Noise Amplifier die which operates between 18 and 40 GHz. The amplifier provides 9 dB of gain, 3.9 dB noise figure at 28 GHz and +12 dBm of output power at 1 dB gain compression while requiring only 45 mA from a single +5V supply. The HMC-ALH445 amplifier is ideal for integration into Multi-Chip-Modules (MCMs) due to its small size. Electrical Specifi cations*, TA = +25° C, Vdd= +5V Parameter Frequency Range Gain Noise Figure Input Return Loss Output Return Loss Output Power for 1 dB Compression Supply Current (Idd) (Vdd = 5V) *Unless otherwise indicated, all measurements are from probed die 8 Min. Typ. 18 - 28 9 4 10 15 12 45 5 8 Max. Min. Typ. 28 - 40 10 3.9 10 15 13 45 4.5 Max. Units GHz dB dB dB dB dBm mA 1 - 194 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC-ALH445 v00.1007 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 18 - 40 GHz Linear Gain vs. Frequency Noise Figure vs. Frequency 1 LOW NOISE AMPLIFIERS - CHIP 1 - 195 Frequency (GHz) Input Return Loss vs. Frequency Output Return Loss vs. Frequency On-Wafer P1dB vs. Frequency Note: Measured Performance Characteristics (Typical Performance at 25°C) Vd1 = 5V, Id1 = 45 mA For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC-ALH445 v00.1007 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 18 - 40 GHz 1 LOW NOISE AMPLIFIERS - CHIP Absolute Maximum Ratings Drain Bias Voltage Drain Bias Current RF Input Power Channel Temperature Storage Temperature Operating Temperature +5.5 Vdc 60 mA 10 dBm 180 °C -65 to +150 °C -55 to +85 °C ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing Die Packaging Information [1] Standard WP - 21 Alternate [2] NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM]. 2. TYPICAL BOND PAD IS .004” SQUARE. 3. BACKSIDE METALLIZATION: GOLD. 4. BACKSIDE METAL IS GROUND. 5. BOND PAD METALLIZATION: GOLD. 6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. 7. OVERALL DIE SIZE ±.002” [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. 1 - 196 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC-ALH445 v00.1007 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 18 - 40 GHz Pad Descriptions Pad Number 1 Function RFIN Description This pad is AC coupled and matched to 50 Ohms. Interface Schematic 1 Vdd Power Supply Voltage for the amplifier. See assembly for required external components. 2, 4 3 RFOUT This pad is AC coupled and matched to 50 Ohms. Die bottom GND Die bottom must be connected to RF/DC ground. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 1 - 197 LOW NOISE AMPLIFIERS - CHIP HMC-ALH445 v00.1007 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 18 - 40 GHz 1 LOW NOISE AMPLIFIERS - CHIP Assembly Diagram Note 1: Bypass caps should be 100 pF (approximately) ceramic (single-layer) placed no farther than 30 mils from the amplifier. Note 2: Best performance obtained from use of