HMC314_10

v02.0802 HMC314 GaAs InGaP HBT MMIC DRIVER AMPLIFIER, 0.7 - 4.0 GHz Features 8 AMPLIFIERS - SMT Typical Applications • 2.2 - 2.7 GHz MMDS Ideal Broadband Gain Stage for: • 3.5 GHz Wireless Local Loop • Low Profile Portable Wireless Devices • WLAN Systems Functional Diagram ED U IN NT T O SC DUC DI RO P P1dB Output Power: +18 dBm Output IP3: +29 dBm Gain: 12 dB Single Supply: 5V Ultra Small Package: SOT26 w r Ne o ed f d General Description men om The HMC314 is a GaAs InGaP Heterojunction Rec Bipolar Transistor (HBT) MMIC amplifier that operNot ates from a single positive supply. This amplifier also incorporates a power down feature. When the “Vpd” pin is held low, the amplifier will shut down. The surface mount SOT26 amplifier can be used as a broadband gain stage for wideband applications. The amplifier provides 12 dB of gain and +22 dBm of saturated power while operating from a single positive +5v supply. The HMC314 is packaged in an ultra small SOT26 package at a height of only 1.45mm. s sign De Electrical Specifi cations, TA = +25° C Vs = +5V, Rbias = 10 Ohm Parameter Min. Frequency Range Gain Gain Variation Over Temperature Input Return Loss Output Return Loss Reverse Isolation Output Power for 1 dB Compression (P1dB) @ 1 GHz Saturated Output Power (Psat) @ 1 GHz Output Third Order Intercept (IP3) @ 1 GHz Switching Speed Supply Current (Icc) Control Voltage (Vpd) Control Current (Ipd) On/Off 6 2 22 15 19 26 7 Typ. 0.7 - 4.0 12 0.015 12 6 30 18 22 29 60 150 0/5 .001/12 16 0.025 Max. GHz dB dB/°C dB dB dB dBm dBm dBm ns mA Volts mA Units 8-1 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com v02.0802 HMC314 GaAs InGaP HBT MMIC DRIVER AMPLIFIER, 0.7 - 4.0 GHz Gain vs. Temperature 20 Gain & Return Loss 20 15 10 RESPONSE (dB) 5 0 -5 -10 -15 -20 -25 0 15 10 1 2 3 4 FREQUENCY (GHz) w r Ne o ed f d men om Rec Not S11 S21 S22 s sign De + 25 C + 65 C - 40 C 5 5 6 7 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 FREQUENCY (GHz) Input Return Loss vs. Temperature 0 Output Return Loss vs. Temperature 0 -5 RETURN LOSS (dB) -10 RETURN LOSS (dB) + 25 C + 65 C - 40 C -4 -8 -15 -12 + 25 C + 65 C - 40 C -20 -16 -25 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 -20 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 FREQUENCY (GHz) FREQUENCY (GHz) Reverse Isolation vs. Temperature 0 -10 ISOLATION (dB) + 25 C + 65 C - 40 C -20 -30 -40 -50 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 8-2 AMPLIFIERS - SMT ED U IN NT T O SC DUC DI RO P GAIN (dB) 8 v02.0802 HMC314 GaAs InGaP HBT MMIC DRIVER AMPLIFIER, 0.7 - 4.0 GHz Psat vs. Temperature 25 8 AMPLIFIERS - SMT P1dB vs. Temperature 25 20 P1dB (dBm) 15 10 5 0 0.5 1 ED U IN NT T O SC DUC DI RO P 20 Psat (dBm) 15 + 25 C + 65 C - 40 C 1.5 2 2.5 3 FREQUENCY (GHz) w r Ne o ed f d men om Rec Not 5 3.5 4 4.5 5 0 0.5 1 1.5 2 25 Pout (dBm), Gain (dB), PAE (%) 10 s sign De + 25 C + 65 C - 40 C 2.5 3 3.5 4 4.5 5 FREQUENCY (GHz) Power Compression @ 1 GHz 25 Pout (dBm), Gain (dB), PAE (%) 20 15 10 5 0 -5 -8 -6 -4 -2 0 2 4 6 8 INPUT POWER (dBm) 10 12 14 16 Pout (dBm) Gain (dB) PAE (%) Power Compression @ 3 GHz 20 15 10 5 0 -5 -8 -6 -4 -2 0 2 4 6 8 INPUT POWER (dBm) 10 12 14 16 Pout (dBm) Gain (dB) PAE (%) Output IP3 vs. Temperature 40 35 30 IP3 (dBm) 25 20 15 10 5 0 0.5 + 25 C + 65 C - 40 C 1 1.5 2 2.5 3 3.5 4 4.5 5 FREQUENCY (GHz) 8-3 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com v02.0802 HMC314 GaAs InGaP HBT MMIC DRIVER AMPLIFIER, 0.7 - 4.0 GHz Truth Table Vs 5V 5V Absolute Maximum Ratings Collector Bias Voltage (Vcc) +5.0 Vdc Control Voltage Range (Vpd) -0.2 to 3.5 Vdc 5V 0V 150 mA