HMC326MS8G

v04.1203 MICROWAVE CORPORATION HMC326MS8G GaAs InGaP HBT MMIC DRIVER AMPLIFIER, 3.0 - 4.5 GHz Features Psat Output Power: +26 dBm > 40% PAE Output IP3: +36 dBm High Gain: 21 dB Vs: +5.0V Ultra Small Package: MSOP8G 8 AMPLIFIERS - SMT Typical Applications The HMC326MS8G is ideal for: • Microwave Radios • Broadband Radio Systems • Wireless Local Loop Driver Amplifier Functional Diagram General Description The HMC326MS8G is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC driver amplifier which operates between 3.0 and 4.5 GHz. The amplifier is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance. The amplifier provides 21 dB of gain and +26 dBm of saturated power from a +5.0V supply voltage. Power down capability is available to conserve current consumption when the amplifier is not in use. Internal circuit matching was optimized to provide greater than 40% PAE. Electrical Specifications, TA = +25° C, Vs = 5V, Vpd = 5V Parameter Frequency Range Gain Gain Variation Over Temperature Input Return Loss Output Return Loss Output Power for 1dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Noise Figure Supply Current (Icc) Control Current (Ipd) Switching Speed tOn/tOff Vpd = 0V / 5V 32 21 18 Min. Typ. 3.0 - 4.5 21 0.025 12 7 23.5 26 36 5 0.001 / 130 7 10 0.035 Max. Units GHz dB dB / °C dB dB dBm dBm dBm dB mA mA ns 8 - 98 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com v04.1203 MICROWAVE CORPORATION HMC326MS8G GaAs InGaP HBT MMIC DRIVER AMPLIFIER, 3.0 - 4.5 GHz Broadband Gain & Return Loss 25 20 15 RESPONSE (dB) S21 S11 S22 Gain vs. Temperature 24 8 AMPLIFIERS - SMT 8 - 99 5 0 -5 -10 -15 -20 2 2.5 3 3.5 4 GAIN (dB) 10 22 20 18 +25C +85C -40C 16 3 3.25 3.5 3.75 4 4.25 4.5 4.5 5 5.5 6 FREQUENCY (GHz) FREQUENCY (GHz) P1dB vs. Temperature 30 +25C +85C -40C Psat vs. Temperature 30 OUTPUT P1dB (dBm) 28 28 Psat (dBm) 26 26 24 24 +25C +85C -40C 22 22 20 3 3.25 3.5 3.75 4 4.25 4.5 FREQUENCY (GHz) 20 3 3.25 3.5 3.75 4 4.25 4.5 FREQUENCY (GHz) Output IP3 vs. Temperature 40 +25C +85C -40C Power Compression @ 3.5 GHz 45 Pout (dBm), Gain (dB), PAE (%) 40 35 30 25 20 15 10 5 0 Output Power (dBm) Gain (dB) PAE (%) 38 OIP3 (dBm) 36 34 32 30 3 3.25 3.5 3.75 4 4.25 4.5 FREQUENCY (GHz) -8 -6 -4 -2 0 2 4 6 8 10 12 INPUT POWER (dBm) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION v04.1203 HMC326MS8G GaAs InGaP HBT MMIC DRIVER AMPLIFIER, 3.0 - 4.5 GHz 8 AMPLIFIERS - SMT Input Return Loss vs. Temperature 0 +25C +85C -40C Output Return Loss vs. Temperature 0 OUTPUT RETURN LOSS (dB) INPUT RETURN LOSS (dB) -3 -5 -6 -10 -9 +25C +85C -40C -15 -12 -20 3 3.25 3.5 3.75 4 4.25 4.5 FREQUENCY (GHz) -15 3 3.25 3.5 3.75 4 4.25 4.5 FREQUENCY (GHz) Reverse Isolation vs. Temperature 0 REVERSE ISOLATION (dB) -10 -20 -30 -40 -50 -60 3 3.25 3.5 3.75 4 4.25 4.5 FREQUENCY (GHz) +25C +85C -40C Noise Figure vs. Temperature 10 9 8 NOISE FIGURE (dB) 7 6 5 4 3 2 1 0 3 3.25 3.5 3.75 4 4.25 4.5 FREQUENCY (GHz) +25C +85C -40C Gain, Power & Quiescent Supply Current vs. Vpd @3.5 GHz 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13 12 1.5 2 2.5 3 3.5 Vpd (Vdc) 4 150 130 110 90 70 P1dB Psat Gain Icc GAIN (dB), P1dB (dBm), Psat (dBm) Icc (mA) 50 30 10 4.5 5 8 - 100 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION v04.1203 HMC326MS8G GaAs InGaP HBT MMIC DRIVER AMPLIFIER, 3.0 - 4.5 GHz Absolute Maximum Ratings Collector Bias Voltage (Vcc) Control Voltage Range (Vpd) RF Input Power (RFin)(Vs = Vpd = +5.0 Vdc) Junction Temperature Continuous Pdiss (T = 85 °C) (derate 11.49 mW/°C above 85 °C) Thermal Resistance (junction to ground paddle) Storage Temperature Operating Temperature +5.5 Vdc +5.5 Vdc +20 dBm 150 °C 0.747 W 8 AMPLIFIERS - SMT NOTES: 1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED PLASTIC SILICA AND SILICON IMPREGNATED. 2. LEADFRAME MATERIAL: COPPER ALLOY 3. LEADFRAME PLATING: Sn/Pb SOLDER 4. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 7. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 87 °C/W -65 to +150 °C -40 to +85 °C Outline Drawing For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 8 - 101 MICROWAVE CORPORATION v04.1203 HMC326MS8G GaAs InGaP HBT MMIC DRIVER AMPLIFIER, 3.0 - 4.5 GHz 8 AMPLIFIERS - SMT Evaluation PCB List of Material Item J1 - J2 J3 C1 - C2 C3 C4 C5 L1 U1 PCB* Description PC Mount SMA RF Connector 2mm DC Header 330 pF Capacitor, 0603 Pkg. 0.7 pF Capacitor, 0603 Pkg. 3.0 pF Capacitor, 0402 Pkg. 2.2 µF Capacitor, Tantalum 3.3 nH Inductor, 0805 Pkg. HMC326MS8G Amplifier 104106 Eval Board The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of VIA holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. *Circuit Board Material: Rogers 4350 8 - 102 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION v04.1203 HMC326MS8G GaAs InGaP HBT MMIC DRIVER AMPLIFIER, 3.0 - 4.5 GHz Application Circuit 8 AMPLIFIERS - SMT Recommended Component Values L1 C1 - C2 C3 C4 C5 3.3 nH 330 pF 0.7 pF 3.0 pF 2.2 µF Note 1: C1 should be located < 0.1” (2.54 mm) from pin 8 (Vcc). Note 2: C2 should be located < 0.1” (2.54 mm) from L1. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 8 - 103