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HMC441LH5

HMC441LH5

  • 厂商:

    HITTITE

  • 封装:

  • 描述:

    HMC441LH5 - GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 7 - 15.5 GHz - Hittite Microwave Corporation

  • 数据手册
  • 价格&库存
HMC441LH5 数据手册
HMC441LH5 v02.0508 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 7 - 15.5 GHz Typical Applications The HMC441LH5 is a medium PA for: Features Gain: 5 dB Saturated Power: +21.5 dBm @ 25% PAE Single Positive Supply: +5V 50 Ohms Matched Input/Output Hermetic SMT Package, 25mm2 Screening to MIL-PRF-38535 (Class B or S) Available • Telecom Infrastructure • Military Radio, Radar & ECM • Space Systems 11 LINEAR & POWER AMPLIFIERS - SMT • Test Instrumentation Functional Diagram General Description The HMC441LH5 is a broadband 7 to 15.5 GHz GaAs PHEMT MMIC Medium Power Amplifier housed in a hermetic SMT leadless package. The amplifier provides 15 dB of gain and 21.5 dBm of saturated power at 25% PAE from a +5V supply. This 50 Ohm matched amplifier does not require any external components, and the RF I/Os are DC blocked, making it an ideal linear gain block or driver amplifier. The HMC441LH5 allows the use of surface mount manufacturing techniques and is suitable for high reliability military, industrial & space applications. Electrical Specifi cations, TA = +25° C, Vdd = 5V Parameter Frequency Range Gain Gain Variation Over Temperature Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Noise Figure Supply Current (Idd) 15.5 11 Min. Typ. 7.0 - 8.0 14 0.015 11 10 18.5 20 30 5.0 90 115 17 0.02 13 Max. Min. Typ. 8.0 - 13.0 16 0.015 13 15 20 21 32 4.75 90 115 16 0.02 12 Max. Min. Typ. 13.0 - 14.0 15 0.015 10 14 19 21.5 32 4.75 90 115 16 0.02 10.5 Max. Min. Typ. 14.0 - 15.5 13.5 0.015 8 12 19 21 32 5.0 90 115 0.02 Max. Units GHz dB dB/ °C dB dB dBm dBm dBm dB mA 11 - 80 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC441LH5 v02.0508 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 7 - 15.5 GHz Broadband Gain & Return Loss 20 15 Gain vs. Temperature 20 16 10 RESPONSE (dB) GAIN (dB) 5 0 -5 -10 4 -15 -20 4 6 8 10 12 14 16 18 20 FREQUENCY (GHz) 0 6 8 10 12 14 16 18 FREQUENCY (GHz) S21 S11 S22 12 +25C +85C -40C 8 11 LINEAR & POWER AMPLIFIERS - SMT 11 - 81 Input Return Loss vs. Temperature 0 Output Return Loss vs. Temperature 0 RETURN LOSS (dB) -10 RETURN LOSS (dB) -5 +25C +85C -40C -5 +25C +85C -40C -10 -15 -15 -20 6 8 10 12 14 16 18 FREQUENCY (GHz) -20 6 8 10 12 14 16 18 FREQUENCY (GHz) P1dB vs. Temperature 23 Psat vs. Temperature 23 21 P1dB (dBm) Psat (dBm) 21 19 19 +25C +85C -40C 17 +25C +85C -40C 17 15 15 13 6 8 10 12 14 16 18 FREQUENCY (GHz) 13 6 8 10 12 14 16 18 FREQUENCY (GHz) F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC441LH5 v02.0508 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 7 - 15.5 GHz Power Compression @ 12 GHz 28 Pout (dBm), GAIN (dB), PAE(%) 24 20 16 12 8 Output IP3 vs. Temperature 36 Pout Gain PAE 32 IP3 (dBm) 28 +25C +85C -40C 11 LINEAR & POWER AMPLIFIERS - SMT 24 20 4 0 -10 16 -6 -2 2 6 10 6 8 10 12 14 16 18 INPUT POWER (dBm) FREQUENCY (GHz) Gain, Power & Output IP3 vs. Supply Voltage @ 12 GHz GAIN (dB), P1dB (dBm), Psat (dBm), IP3 (dBm) 36 34 32 Noise Figure vs. Temperature 10 +25C +85C -40C 28 26 24 22 20 18 16 14 4.5 Gain P1dB Psat IP3 NOISE FIGURE (dB) 5.2 5.3 5.4 5.5 30 8 6 4 2 0 4.6 4.7 4.8 4.9 5 5.1 6 8 10 12 14 16 18 Vdd Supply Voltage (V) FREQUENCY (GHz) Reverse Isolation vs. Temperature 0 -10 ISOLATION (dB) +25C +85C -40C -20 -30 -40 -50 6 8 10 12 14 16 18 FREQUENCY (GHz) 11 - 82 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC441LH5 v02.0508 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 7 - 15.5 GHz Typical Supply Current vs. Vdd Vdd (V) +5.5 +5.0 +4.5 Idd (mA) 92 90 88 Absolute Maximum Ratings Drain Bias Voltage (Vdd) RF Input Power (RFIN)(Vdd = +5Vdc) Channel Temperature Continuous Pdiss (T = 85 °C) (derate 8.4 mW/°C above 85 °C) Thermal Resistance (channel to ground paddle) Storage Temperature Operating Temperature +6 Vdc +15 dBm 175 °C 0.76 W 118.8 °C/W -65 to +150 °C -40 to +85 °C Note: Amplifier will operate over full voltage range shown above ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS 11 LINEAR & POWER AMPLIFIERS - SMT 11 - 83 Outline Drawing NOTES: 1. PACKAGE BODY MATERIAL: CERAMIC & KOVAR 2. LEAD AND GROUND PADDLE PLATING: GOLD 40 - 80 MICROINCHES. 3. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE 5. PAD BURR LENGTH 0.15mm MAX. PAD BURR HEIGHT 0.25mm MAX. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC441LH5 v02.0508 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 7 - 15.5 GHz Pin Descriptions Pin Number 1, 3-7, 9, 10, 12 Function GND Description These pins and package bottom must be connected to RF/DC ground. This pin is AC coupled and matched to 50 Ohms. This pin is AC coupled and matched to 50 Ohms. Interface Schematic 2 RFIN 11 LINEAR & POWER AMPLIFIERS - SMT 8 RFOUT 11 Vdd Power Supply Voltage for the amplifier. External bypass capacitors are recommended. Application Circuit Component C1 C2 C3 Value 100 pF 1,000 pF 4.7 μF 11 - 84 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC441LH5 v02.0508 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 7 - 15.5 GHz Evaluation PCB 11 LINEAR & POWER AMPLIFIERS - SMT 11 - 85 List of Materials for Evaluation PCB 111560 [1] Item J1 - J2 U1 C1 C2 C3 PCB [2] Description PCB Mount SMA RF Connector, SRI HMC441LH5 100 pF Capacitor, 0402 Pkg. 1,000 pF Capacitor, 0603 Pkg. 4.7 μF Capacitor, Tantalum 111558 Evaluation Board [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation circuit board shown is available from Hittite upon request. F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
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