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HMC586LC4B_10

HMC586LC4B_10

  • 厂商:

    HITTITE

  • 封装:

  • 描述:

    HMC586LC4B_10 - WIDEBAND MMIC VCO w/ BUFFER AMPLIFIER, 4 - 8 GHz - Hittite Microwave Corporation

  • 数据手册
  • 价格&库存
HMC586LC4B_10 数据手册
HMC586LC4B v02.0810 WIDEBAND MMIC VCO w/ BUFFER AMPLIFIER, 4 - 8 GHz Typical Applications Low Noise wideband MMIC VCO is ideal for: • Industrial/Medical Equipment • Test & Measurement Equipment • Military Radar, EW & ECM Features Wide Tuning Bandwidth Pout: +5 dBm Low SSB Phase Noise: -100 dBc/Hz @100 kHz No External Resonator Needed Single Positive Supply: +5V @ 55 mA RoHS Compliant 4 x 4 mm SMT Package Functional Diagram General Description The HMC586LC4B is a wideband GaAs InGaP Voltage Controlled Oscillator which incorporates the resonator, negative resistance device, and varactor diode. Output power and phase noise performance are excellent over temperature due to the oscillator’s monolithic construction. The Vtune port accepts an analog tuning voltage from 0 to +18V. The HMC586LC4B VCO operates from a single +5V supply, consumes only 55 mA of current, and is housed in a RoHS compliant SMT package. This wideband VCO uniquely combines the attributes of ultra small size, low phase noise, low power consumption, and wide tuning range. 8 WIDEBAND VCOS - SMT Electrical Specifi cations, TA = +25° C, Vcc = +5V Parameter Frequency Range Power Output SSB Phase Noise @ 100 kHz Offset SSB Phase Noise @ 10 kHz Offset Tune Voltage (Vtune) Supply Current (Icc) (Vcc = +5.0V) Tune Port Leakage Current (Vtune = +15V) Output Return Loss 2nd Harmonic Pulling (into a 2.0:1 VSWR) Pushing @ Vtune= +5V Frequency Drift Rate 7 -14 4 40 0.8 0 40 2 Min. Typ. 4.0 - 8.0 5 -100 -75 18 75 10 Max. Units GHz dBm dBc/Hz dBc/Hz V mA μA dB dBc MHz pp MHz/V MHz/°C 8-1 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC586LC4B v02.0810 WIDEBAND MMIC VCO w/ BUFFER AMPLIFIER, 4 - 8 GHz Frequency vs. Tuning Voltage, Vcc = +5V 9 OUTPUT FREQUENCY (GHz) 8 7 6 5 4 3 0 2 4 6 8 10 12 14 16 18 20 TUNING VOLTAGE (VOLTS) 4.75 V 5.0 V 5.25 V Frequency vs. Tuning Voltage, T = +25 C 9 OUTPUT FREQUENCY (GHz) 8 7 6 5 4 3 0 2 4 6 8 10 12 14 16 18 20 TUNING VOLTAGE (VOLTS) +25 C +85 C -40 C Sensitivity vs. Tuning Voltage, Vcc= +5V 600 500 400 300 200 100 0 0 2 4 6 8 10 12 14 16 18 20 TUNING VOLTAGE (VOLTS) +25 C +85 C -40 C Output Power vs. Tuning Voltage, Vcc= +5V 10 8 OUTPUT POWER (dBm) 6 4 2 0 -2 -4 0 2 4 6 8 10 12 14 16 18 20 TUNING VOLTAGE (VOLTS) +25 C +85 C -40 C SENSITIVITY (MHz/VOLT) 8 WIDEBAND VCOS - SMT 8-2 SSB Phase Noise vs. Tuning Voltage 0 SSB PHASE NOISE (dBc/Hz) -15 -30 -45 -60 -75 -90 -105 -120 0 2 4 6 8 10 12 14 16 18 20 TUNING VOLTAGE (VOLTS) 10 kHz 100 kHz Typical SSB Phase Noise @ Vtune= +5V 0 SSB PHASE NOISE (dBc/Hz) -20 -40 -60 -80 -100 -120 2 10 10 3 10 4 10 5 10 6 OFFSET FREQUENCY (Hz) F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC586LC4B v02.0810 WIDEBAND MMIC VCO w/ BUFFER AMPLIFIER, 4 - 8 GHz Absolute Maximum Ratings Vcc Vtune Junction Temperature Continuous Pdiss (T = 85°C) (derate 12.5 mW/°C above 85°C) Thermal Resistance (junction to ground paddle) Storage Temperature Operating Temperature +5.5 Vdc 0 to +22V 135 °C 625 mW 80 °C/W -65 to +150 °C -40 to +85 °C ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing 8 WIDEBAND VCOS - SMT NOTES: 1. PACKAGE BODY MATERIAL: ALUMINA 2. LEAD AND GROUND PADDLE PLATING: GOLD FLASH OVER Ni. 3. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE. 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm DATUM -C6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. Pin Descriptions Pin Number 1 - 3, 5 - 11, 13, 17 - 24 Function N/C Description No Connection. These pins may be connected to RF/DC ground. Performance will not be affected. Control Voltage and Modulation Input. Modulation bandwidth dependent on drive source impedance. See “Determining the FM Bandwidth of a Wideband Varactor Tuned VCO” application note. Interface Schematic 4 Vtune 12 Vcc Supply Voltage Vcc= +5V 8-3 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC586LC4B v02.0810 WIDEBAND MMIC VCO w/ BUFFER AMPLIFIER, 4 - 8 GHz Pin Descriptions Pin Number 14, 16 Function GND Description Package bottom has an exposed metal paddle that must also be RF & DC grounded. Interface Schematic 15 RFOUT RF output (AC coupled) Evaluation PCB 8 WIDEBAND VCOS - SMT 8-4 List of Materials for Evaluation PCB 108648 [1] Item J1 J2 J3 C1 C2 U1 PCB [2] Description PCB Mount SMA RF Connector, Johnson PCB Mount SMA Connector, SRI DC Header 1000 pF Capacitor, 0402 Pkg. 4.7 μF Capacitor, Tantalum HMC586LC4B VCO 108646 Eval Board [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 The circuit board used in the application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads and exposed ground paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation circuit board shown is available from Hittite upon request. F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com
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