HMC608_07

HMC608 v01.0707 GaAs PHEMT MEDIUM POWER AMPLIFIER, 9.5 - 11.5 GHz Typical Applications The HMC608 is ideal for: • Point-to-Point Radios Features Output IP3: +33 dBm Saturated Power: +27.5 dBm @ 23% PAE Gain: 32 dB Supply: +5V @ 310 mA 50 Ohm Matched Input/Output 3 LINEAR & POWER AMPLIFIERS - CHIP • Point-to-Multi-Point Radios • Military End-Use Die Size: 2.1 x 1.2 x 0.1 mm Functional Diagram General Description The HMC608 is a high dynamic range GaAs PHEMT MMIC Medium Power Amplifier chip. The amplifier has two modes of operation: high gain mode (Vpd pin shorted to ground); and low gain mode (Vpd pin left open). The electrical specifications in the table below are shown for the amplifier operating in high gain mode. Operating from 9.5 to 11.5 GHz, the amplifier provides 32 dB of gain, +27.5 dBm of saturated power and 23% PAE from a +5V supply voltage. Noise figure is 5.5 dB while output IP3 is +33 dBm. The RF I/Os are DC blocked and matched to 50 Ohms for ease of use. Electrical Specifi cations, TA = +25° C, Vdd1, 2, 3 = 5V, Idd = 310 mA [1] , Vpd = GND[2] Parameter Frequency Range Gain [3] Gain Variation Over Temperature Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Noise Figure Supply Current (Idd = Idd1 +Idd2 +Idd3)(Vdd = +5V, Vgg = -2.6V Typ.) [3] [1] Adjust Vgg between -3 to 0V to achieve Idd = 310 mA typical. [2] Vpd= ground for high gain mode, Vpd = open for low gain mode. [3] In low gain mode, typical gain is 22 dB and typical current is 67 mA. 23 28 Min. Typ. 9.5 - 11.5 32 0.02 12 20 27 27.5 33 5.5 310 350 0.03 Max. Units GHz dB dB/ °C dB dB dBm dBm dBm dB mA 3 - 106 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC608 v01.0707 GaAs PHEMT MEDIUM POWER AMPLIFIER, 9.5 - 11.5 GHz Broadband Gain & Return Loss 35 30 25 20 15 10 5 0 -5 -10 -15 -20 -25 -30 7 8 9 10 Gain vs. Temperature 38 34 S21 S11 S22 RESPONSE (dB) GAIN (dB) 30 +25C +85C -55C 3 LINEAR & POWER AMPLIFIERS - CHIP 3 - 107 26 22 18 11 12 13 14 9 9.5 10 10.5 11 11.5 FREQUENCY (GHz) FREQUENCY (GHz) Input Return Loss vs. Temperature 0 -5 RETURN LOSS (dB) Output Return Loss vs. Temperature 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 -35 +25C +85C -55C -10 -15 -20 -25 -30 9 9.5 10 10.5 11 11.5 FREQUENCY (GHz) +25C +85C -55C 9 9.5 10 10.5 11 11.5 FREQUENCY (GHz) P1dB vs. Temperature 35 30 25 P1dB (dBm) 20 15 10 5 0 9 9.5 10 10.5 11 11.5 FREQUENCY (GHz) Psat vs. Temperature 35 30 25 Psat (dBm) 20 15 10 5 0 9 9.5 10 10.5 11 11.5 FREQUENCY (GHz) +25C +85C -40C +25C +85C -40C For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC608 v01.0707 GaAs PHEMT MEDIUM POWER AMPLIFIER, 9.5 - 11.5 GHz Output IP3 vs. Temperature 40 35 Noise Figure vs. Temperature 10 9 8 NOISE FIGURE (dB) OIP3 (dBm) 3 LINEAR & POWER AMPLIFIERS - CHIP 30 25 20 15 10 5 0 9 9.5 10 10.5 11 11.5 FREQUENCY (GHz) +25C +85C -40C 7 6 5 4 3 2 1 0 9 9.5 10 10.5 11 11.5 FREQUENCY (GHz) +25C +85C -55C Gain, Power & OIP3 vs. Supply Voltage @ 10.3 GHz GAIN (dB), P1dB(dBm), Psat (dBm), IP3 (dBm) 35 33 Reverse Isolation vs. Temperature 0 -10 ISOLATION (dB) -20 -30 -40 -50 31 Gain P1dB Psat IP3 +25C +85C -55C 29 27 -60 25 4.5 -70 9 9.5 10 10.5 11 11.5 FREQUENCY (GHz) 5 Vdd Supply Voltage (V) 5.5 Power Compression @ 10.3 GHz 35 Pout (dBm), GAIN (dB), PAE (%) 30 25 20 15 10 5 0 -20 Power Dissipation 4 3.5 3 2.5 2 1.5 1 -30 9 GHz 9.5 GHz 10 GHz 10.5 GHz 11.0 GHz 11.5 GHz Pout Gain PAE -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 POWER DISSIPATION (W) -25 -20 -15 -10 -5 0 Pin (dBm) INPUT POWER (dBm) 3 - 108 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC608 v01.0707 GaAs PHEMT MEDIUM POWER AMPLIFIER, 9.5 - 11.5 GHz Low Gain Mode, Broadband Gain & Return Loss 25 20 15 RESPONSE (dBm) 10 5 0 -5 -10 -15 -20 -25 -30 -35 7 8 9 10 11 12 13 14 FREQUENCY (GHz) S21 S11 S22 Low Gain Mode, Gain vs. Temperature 28 26 24 22 GAIN (dB) 20 18 16 14 12 10 8 9 9.5 10 10.5 11 11.5 FREQUENCY (GHz) +25C +85C -55C 3 LINEAR & POWER AMPLIFIERS - CHIP 3 - 109 Low Gain Mode, Input Return Loss vs. Temperature 0 -5 RETURN LOSS (dB) Low Gain Mode, Output Return Loss vs. Temperature 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 -35 +25C +85C -55C -10 -15 -20 -25 -30 9 9.5 10 10.5 11 11.5 FREQUENCY (GHz) +25C +85C -55C 9 9.5 10 10.5 11 11.5 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC608 v01.0707 GaAs PHEMT MEDIUM POWER AMPLIFIER, 9.5 - 11.5 GHz Typical Supply Current vs. Vdd Vdd (Vdc) +4.5 +5.0 +5.5 Idd (mA) 300 310 325 Absolute Maximum Ratings Drain Bias Voltage (Vdd1, Vdd2, Vdd3) Gate Bias Voltage (Vgg) 7 Vdc -4.0 to -1.0 Vdc +10 dBm 175 °C 2.33W 38.6 °C/W -65 to +150 °C -55 to +85 °C 3 LINEAR & POWER AMPLIFIERS - CHIP RF Input Power (RFIN)(Vdd = +5.0 Vdc) Channel Temperature Continuous Pdiss (T= 85 °C) (derate 25.89 mW/°C above 85 °C) Thermal Resistance (channel to die bottom) Storage Temperature Operating Temperature Note: Amplifi er will operate over full voltage ranges shown above. Vgg adjusted to achieve Idd= 310 mA at +5.0V. ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing Die Packaging Information [1] Standard GP-2 Alternate [2] [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. NOTES: 1. ALL DIMENSIONS IN INCHES [MILLIMETERS] 2. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS 3. DIE THICKNESS IS 0.004 (0.100) 4. TYPICAL BOND PAD IS 0.004 (0.100) SQUARE 5. BACKSIDE METALLIZATION: GOLD 6. BACKSIDE METAL IS GROUND 7. BOND PAD METALIZATION: GOLD 3 - 110 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC608 v01.0707 GaAs PHEMT MEDIUM POWER AMPLIFIER, 9.5 - 11.5 GHz Pad Descriptions Pad Number 1 2, 8 and Die Bottom Function RFIN Description This pad is AC coupled and matched to 50 Ohms. Interface Schematic GND Die Bottom must be connected to RF/DC ground. 3 LINEAR & POWER AMPLIFIERS - CHIP 3 - 111 3 Vgg Gate control for amplifier. Adjust to achieve Id of 310mA. Please follow “MMIC Amplifier Biasing Procedure” Application Note. External bypass capacitors of 100 pF, 1000 pF and 2.2 μF are required. 4 Vpd High gain (connect to ground) / low gain mode pin control (open circuit). External bypass capacitors of 100 pF, 1000 pF and 2.2 μF are required. 5, 6, 7 Vdd1, Vdd2, Vdd3 Power Supply Voltage for the amplifier. External bypass capacitors of 100 pF and 0.1 μF are required. 9 RFOUT This pad is AC coupled and matched to 50 Ohms. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC608 v01.0707 GaAs PHEMT MEDIUM POWER AMPLIFIER, 9.5 - 11.5 GHz Assembly Diagram 3 LINEAR & POWER AMPLIFIERS - CHIP 3 - 112 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC608 v01.0707 GaAs PHEMT MEDIUM POWER AMPLIFIER, 9.5 - 11.5 GHz Mounting & Bonding Techniques for Millimeterwave GaAs MMICs The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). Microstrip substrates should be brought as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm (3 mils). 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) 3 RF Ground Plane 0.127mm (0.005”) Thick Alumina Thin Film Substrate Figure 1. Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against > ± 250V ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) RF Ground Plane Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. 0.150mm (0.005”) Thick Moly Tab 0.254mm (0.010”) Thick Alumina Thin Film Substrate Figure 2. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding Ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire is recommended. Thermosonic wirebonding with a nominal stage temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible