HMC649

HMC649 v01.0208 GaAs MMIC 6-BIT DIGITAL PHASE SHIFTER, 3 - 6 GHz Typical Applications The HMC649 is ideal for: • EW Receivers Features Low RMS Phase Error: 3° Low Insertion Loss: 6.5 dB High Linearity: +44 dBm Positive Control Logic 360° Coverage, LSB = 5.625° Die Size: 4.5 x 1.9 x 0.1 mm 3 PHASE SHIFTERS - DIGITAL - CHIP • Weather & Military Radar • Satellite Communications • Beamforming Modules • Phase Cancellation Functional Diagram General Description The HMC649 is a 6-bit digital phase shifter die which is rated from 3 to 6 GHz, providing 360 degrees of phase coverage, with a LSB of 5.625 degrees. The HMC649 features low RMS phase error of 3 degrees and extremely low insertion loss variation of ±0.5 dB across all phase states. This high accuracy phase shifter is controlled with positive control logic of 0/+5V, and is internally matched to 50 Ohms with no external components. Electrical Specifi cations, TA = +25° C, Vss= -5V, Vdd= +5V, Control Voltage = 0/ +5V, 50 Ohm System Parameter Frequency Range Insertion Loss* Input Return Loss* Output Return Loss* Phase Error* RMS Phase Error Insertion Loss Variation* Input Power for 1 dB Compression Input Third Order Intercept Control Voltage Current Bias Control Current *Note: Major States Shown Min. 3 6.5 12 10 ±5 3 ±0.5 29 44 35 5 250 15 +15 / -20 Typ. Max. 6 9 Units GHz dB dB dB deg deg dB dBm dBm μA mA 3 - 44 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC649 v01.0208 GaAs MMIC 6-BIT DIGITAL PHASE SHIFTER, 3 - 6 GHz Insertion Loss, Major States Only 0 -2 INSERTION LOSS (dB) -4 -6 -8 -10 -12 2 3 4 5 6 7 FREQUENCY (GHz) Normalized Loss, Major States Only 4 3 NORMALIZED LOSS (dB) 2 1 0 3 PHASE SHIFTERS - DIGITAL - CHIP 3 - 45 -1 -2 -3 -4 2 3 4 5 6 7 FREQUENCY (GHz) Input Return Loss, Major States Only 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 2 3 4 5 6 7 FREQUENCY (GHz) Phase Error, Major States Only 20 15 PHASE ERROR (degrees) 10 5 0 -5 -10 -15 -20 2 3 4 5 6 7 FREQUENCY (GHz) Output Return Loss, Major States Only 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 2 3 4 5 6 7 FREQUENCY (GHz) Relative Phase Shift Major States, Including All Bits 400 RELATIVE PHASE SHIFT (degrees) 350 300 250 200 150 100 50 0 2 3 4 5 6 7 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC649 v01.0208 GaAs MMIC 6-BIT DIGITAL PHASE SHIFTER, 3 - 6 GHz Relative Phase Shift, RMS, Average, Max, All States 30 RELATIVE PHASE SHIFT (degrees) 25 20 15 10 5 0 -5 -10 3 3.5 4 4.5 5 5.5 6 FREQUENCY (GHz) RMS AVERAGE MAX Input IP3, Major States Only 60 55 50 IP3 (dBm) 45 40 35 30 25 20 3 3.5 4 4.5 5 5.5 6 FREQUENCY (GHz) 3 PHASE SHIFTERS - DIGITAL - CHIP Input IP2, Major States Only 120 110 Input P1dB, Major States Only 40 35 P1dB (dBm) 100 IP2 (dBm) 90 80 70 60 3 3.5 4 4.5 5 5.5 6 FREQUENCY (GHz) 20 3 3.5 4 4.5 5 5.5 6 FREQUENCY (GHz) 30 25 RMS Phase Error vs. Temperature 20 RELATIVE PHASE SHIFT (degrees) 15 10 5 0 -5 -10 3 3.5 4 4.5 5 5.5 6 FREQUENCY (GHz) +25C +85C -55C Insertion Loss vs. Temperature, Major States Only 0 -2 INSERTION LOSS (dB) -4 -6 -8 -10 -12 3 3.5 4 4.5 5 5.5 6 FREQUENCY (GHz) 3 - 46 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC649 v01.0208 GaAs MMIC 6-BIT DIGITAL PHASE SHIFTER, 3 - 6 GHz Absolute Maximum Ratings Input Power (RFIN) 32 dBm (T= +85 °C) -0.2 to +12V +0.2 to -12V 150 °C 140 °C/W Bias Voltage Range (Vdd) Bias Voltage Range (Vss) Phase Error vs. State 10 3, 4, 5 GHz PHASE ERROR (degrees) 5 0 -5 -10 -15 -20 0 45 90 135 180 225 270 315 360 STATE (degrees) 6 GHz Channel Temperature (Tc) Thermal Resistance (channel to die bottom) Storage Temperature Operating Temperature 3 PHASE SHIFTERS - DIGITAL - CHIP 3 - 47 -65 to +150 °C -55 to +85 °C ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Truth Table Control Voltage Input Bit 1 0 1 0 0 0 0 0 1 Bit 2 0 0 1 0 0 0 0 1 Bit 3 0 0 0 1 0 0 0 1 Bit 4 0 0 0 0 1 0 0 1 Bit 5 0 0 0 0 0 1 0 1 Bit 6 0 0 0 0 0 0 1 1 Phase Shift (Degrees) RFIN - RFOUT Reference* 5.625 11.25 22.5 45.0 90.0 180.0 354.375 Bias Voltage & Current Vdd 5.0 Vss -5.0 Idd 5.4mA Iss 5.4mA Control Voltage State Low (0) High (1) Bias Condition 0 to 0.2 Vdc Vdd ±0.2 Vdc @ 35 μA Typ. Any combination of the above states will provide a phase shift approximately equal to the sum of the bits selected. *Reference corresponds to monotonic setting Pad Descriptions Pad Number 1 2, 11 3 4 - 6, 8 - 10 7 12 Function RFIN GND Vdd BIT1, BIT2, BIT3, BIT4, BIT5. BIT6 Vss RFOUT Description This port is DC coupled and matched to 50 Ohms. These pads and die bottom must be connected to RF/DC ground. Supply voltage. Control Input. See truth table and control voltage tables. Supply voltage. This port is DC coupled and matched to 50 Ohms. Interface Schematic For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC649 v01.0208 GaAs MMIC 6-BIT DIGITAL PHASE SHIFTER, 3 - 6 GHz Outline Drawing 3 PHASE SHIFTERS - DIGITAL - CHIP Die Packaging Information [1] Standard GP-1 (Gel Pack) Alternate [2] NOTES: 1. ALL DIMENSIONS IN INCHES (MILLIMETERS) 2. DIE THICKNESS IS 0.004 3. BACKSIDE METALLIZATION: GOLD 4. BACKSIDE METAL IS GROUND 5. BOND PADS METALLIZATION: GOLD 6. OVERALL DIE SIZE ±0.002 [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. 3 - 48 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC649 v01.0208 GaAs MMIC 6-BIT DIGITAL PHASE SHIFTER, 3 - 6 GHz Assembly Diagram 3 PHASE SHIFTERS - DIGITAL - CHIP 3 - 49 Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against > ± 250V ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting The chip is back-metallized and can be die mounted with electrically conductive epoxy. The mounting surface should be clean and fl at. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150 deg. C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible