HMC693

HMC693 v03.1108 GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, 27 - 34 GHz Features saturated output power: +30 dBm @ 23% pAe output ip3: +37 dBm Gain: 17.5 dB DC supply: +5V @ 800mA 50 ohm matched input/output Die size: 2.53 x 2.43 x 0.1 mm Typical Applications The hmC693 is ideal for: • point-to-point radios 3 Amplifiers - lineAr & power - Chip • point-to-multi-point radios • VsAT • military & space Functional Diagram General Description The hmC693 is a two stage GaAs phemT mmiC 1 watt power Amplifier which operates between 27 and 34 Ghz. The hmC693 provides 17.5 dB of gain, and +30 dBm of saturated output power at 23% pAe from a +5V supply. The rf i/os are DC blocked and matched to 50 ohms for ease of integration into multi-Chip-modules (mCms). All data is taken with the chip in a 50 ohm test fixture connected via 0.025 mm (1 mil) diameter wire bonds of length 0.31 mm (12 mils). Electrical Specifications, TA = +25° C, Vdd = Vdd1-3t = Vdd1-3b = +5V, Idd = 800mA, Vgg = Vgg1-3t = Vgg1-3b [1] parameter frequency range Gain Gain Variation over Temperature input return loss output return loss output power for 1 dB Compression (p1dB) saturated output power (psat) output Third order intercept (ip3)[2] Total supply Current (idd) 27 16 min. Typ. 27 - 29.5 18.5 0.023 17 34 30 30.8 38 800 1100 27 15 max. min. Typ. 29.5 - 31.4 17.5 0.014 17 24 30 31 38 800 1100 27 14 max. min. Typ. 31.4 - 34 16.5 0.016 14 19 29 29.6 37 800 1100 max. Units Ghz dB dB/ °C dB dB dBm dBm dBm mA [1] Adjust Vgg between -2 to 0V to achieve idd= 800mA typical. [2] measurement taken at 5V @ 800mA, pin / Tone = +10 dBm 3-1 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC693 v03.1108 GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, 27 - 34 GHz Gain vs. Frequency Over Temperature 30 Broadband Gain & Return Loss vs. Frequency 30 20 RESPONSE (dB) 20 S21 S11 S22 RESPONSE (dB) 10 0 -10 -20 -30 -40 22 24 26 28 30 32 34 36 38 FREQUENCY (GHz) 10 +25 C +85 C -55 C 3 22 24 26 28 30 32 34 36 38 0 -10 -20 FREQUENCY (GHz) Input Return Loss vs. Frequency Over Temperature 0 +25 C +85 C -55 C Output Return Loss vs. Frequency Over Temperature 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 -35 +25 C +85 C -55 C -5 RETURN LOSS (dB) -10 -15 -20 -25 26 27 28 29 30 31 32 33 34 35 FREQUENCY (GHz) -40 26 27 28 29 30 31 32 33 34 35 FREQUENCY (GHz) P1dB vs. Frequency Over Temperature 33 Psat vs. Frequency Over Temperature 33 31 P1dB (dBm) Psat (dBm) 31 29 +25 C +85 C -55 C 29 +25 C +85 C -55 C 27 27 25 25 23 26 27 28 29 30 31 32 33 34 FREQUENCY (GHz) 23 26 27 28 29 30 31 32 33 34 FREQUENCY (GHz) For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 3-2 Amplifiers - lineAr & power - Chip HMC693 v03.1108 GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, 27 - 34 GHz Psat vs. Frequency Over Current 33 P1dB vs. Frequency Over Current 33 P1dB (dBm) 29 500mA 600mA 800mA 1000mA 1100mA Psat (dBm) 3 Amplifiers - lineAr & power - Chip 31 31 29 500mA 600mA 800mA 1000mA 1100mA 27 27 25 25 23 26 27 28 29 30 31 32 33 34 FREQUENCY (GHz) 23 26 27 28 29 30 31 32 FREQUENCY (GHz) Output IP3 vs. Temperature 5V @ 800mA, Pin/Tone = +10 dBm 44 Power Compression @ 30 GHz, 5V @ 800mA 35 Pout(dBm), Gain(dB), PAE(%) 30 25 20 15 10 5 0 -10 Pout dBm Gain dB PAE % 40 IP3 (dBm) 36 +25 C +85 C -55 C 32 28 24 26 27 28 29 30 31 32 33 34 FREQUENCY (GHz) -6 -2 2 6 10 14 18 INPUT POWER (dBm) Output IM3, 5V @ 700mA 75 Output IM3, 5V @ 800mA 75 60 60 IM3 (dBc) 30 27 GHz 29 GHz 33 GHz 34 GHz IM3 (dBc) 45 45 30 27 GHz 29 GHz 33 GHz 34 GHz 15 15 0 7 10 13 16 19 22 25 28 OUTPUT POWER PER TONE (dBm) 0 7 10 13 16 19 22 25 28 OUTPUT POWER PER TONE(dBm) 3-3 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC693 v03.1108 GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, 27 - 34 GHz Gain & Power vs. Supply Voltage @ 30 GHz 35 GAIN (dB), P1dB (dBm), Psat (dBm) 30 25 20 15 10 5 0 4.5 Gain P1dB Psat Gain & Power vs. Supply Current @ 30 GHz 35 GAIN (dB), P1dB (dBm), Psat (dBm) 30 25 20 15 10 5 0 500 Gain P1dB Psat 3 5.5 600 700 800 900 1000 1100 5 Vdd (V) Idd Supply Current (mA) Reverse Isolation vs. Frequency Over Temperature, 5V @ 800mA 0 -10 Power Dissipation, 5V @ 800mA 5 4.75 POWER DISSIPATION (W) 27 GHz 28 GHz 30 GHz 32 GHz 34 GHz -20 ISOLATION (dB) -30 -40 -50 -60 -70 -80 26 27 28 29 30 +25 C +85 C -55 C 4.5 4.25 4 3.75 3.5 3.25 3 31 32 33 34 35 0 2 4 6 8 10 12 14 16 18 FREQUENCY (GHz) INPUT POWER (dBm) Absolute Maximum Ratings rf input power (rfin)(Vdd = 5 Vdc) Channel Temperature Continuous pdiss (T= 85 °C) (derate 76.9 mw/°C above 85 °C) Thermal resistance (channel to die bottom) storage Temperature operating Temperature +20 dBm 175 °C 6.9 w 13 °C/w -65 to +150 °C -55 to +85 °C Typical Supply Current vs. Vdd Vdd (V) +4.5 +5.0 +5.5 idd (mA) 785 800 790 Note: Amplifier will operate over full voltage ranges shown above Vgg adjusted to achieve Idd = 800mA at +5V eleCTrosTATiC sensiTiVe DeViCe oBserVe hAnDlinG preCAUTions For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 3-4 Amplifiers - lineAr & power - Chip HMC693 v03.1108 GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, 27 - 34 GHz Outline Drawing 3 Amplifiers - lineAr & power - Chip Die Packaging Information standard Gp-1 (Gel pack) [1] Alternate [2] [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. noTes: 1. All Dimensions Are in inChes [mm] 2. Die ThiCKness is .004” 3. TYpiCAl BonD pAD is .004” sQUAre 4. BACKsiDe meTAlliZATion: GolD 5. BonD pAD meTAlliZATion: GolD 6. BACKsiDe meTAl is GroUnD. 7. ConneCTion noT reQUireD for UnlABeleD BonD pADs. 8. oVerAll Die siZe ± .002 3-5 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC693 v03.1108 GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, 27 - 34 GHz Pad Descriptions pad number 1 function rfin Description This pad is AC coupled and matched to 50 ohm. Gate control for amplifier. Adjust to achieve recommended bias current. please follow “mmiC Amplifier Biasing procedure” Application note. external bypass capacitors of 100pf and 0.1uf are required interface schematic 2, 4, 6, 10, 12, 14 Vgg1t, Vgg2t Vgg3t, Vgg3b Vgg2b, Vgg1b 3 Amplifiers - lineAr & power - Chip 3-6 3, 5, 7, 9, 11, 13 Vdd1t, Vdd2t Vdd3t, Vdd3b Vdd2b, Vdd1b power supply voltage for amplifier. external bypass capacitors of 100pf and 0.1uf are required. 8 rfoUT This pad is AC coupled and matched to 50 ohm. Die bottom must be connected to rD/DC ground. Die Bottom GnD For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC693 v03.1108 GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, 27 - 34 GHz Assembly Diagram 3 Amplifiers - lineAr & power - Chip 3-7 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC693 v03.1108 GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, 27 - 34 GHz Mounting & Bonding Techniques for Millimeterwave GaAs MMICs The die should be attached directly to the ground plane eutectically or with conductive epoxy (see hmC general handling, mounting, Bonding note). 50 ohm microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing rf to and from the chip (figure 1). if 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. one way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (figure 2). microstrip substrates should be located as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) 3 Amplifiers - lineAr & power - Chip 3-8 RF Ground Plane 0.127mm (0.005”) Thick Alumina Thin Film Substrate Figure 1. Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either waffle or Gel based esD protective containers, and then sealed in an esD protective bag for shipment. once the sealed esD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: handle the chips in a clean environment. Do noT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: follow esD precautions to protect against > ± 250V esD strikes. Transients: suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pickup. 0.102mm (0.004”) Thick GaAs MMIC 0.076mm (0.003”) Wire Bond RF Ground Plane 0.150mm (0.005”) Thick Moly Tab 0.254mm (0.010”) Thick Alumina Thin Film Substrate Figure 2. General Handling: handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting The chip is back-metallized and can be die mounted with Ausn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature of 265 °C. when hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. Do noT expose the chip to a temperature greater than 320 °C for more than 20 seconds. no more than 3 seconds of scrubbing should be required for attachment. epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible