HMC752LC4

HMC752LC4 v00.0409 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 24 - 28 GHz Features Noise Figure: 2.5 dB Gain: 25 dB P1dB Output Power: +13 dBm Supply Voltage: +3V @ 70 mA Output IP3: +26 dBm 50 Ohm matched Input/Output 24 Lead Ceramic 4x4mm SMT Package: 16mm2 8 LOW NOISE AMPLIFIERS - SMT Typical Applications This HMC752LC4 is ideal for: • Point-to-Point Radios • Point-to-Multi-Point Radios • Military & Space • Test Instrumentation Functional Diagram General Description The HMC752LC4 is a GaAs MMIC Low Noise Wideband Amplifier housed in a leadless 4x4 mm ceramic surface mount package. The amplifier operates between 24 and 28 GHz, providing up to 25 dB of small signal gain, 2.5 dB noise figure, and output IP3 of +26 dBm, while requiring only 70 mA from a +3V supply. The P1dB output power of up to +13 dBm enables the LNA to function as a LO driver for balanced, I/Q or image reject mixers. The HMC752LC4 also features I/Os that are DC blocked and internally matched to 50 Ohms, making it ideal for high capacity microwave radios or VSAT applications. Electrical Specifi cations, TA = +25° C, Vdd = Vdd1= Vdd2 = +3V, Idd = Idd1 + Idd2 = 70 mA[2] Parameter Frequency Range Gain [1] Min. Typ. 24 - 28 Max. Units GHz dB dB / °C 23 25 0.02 2.5 14 14 13 16 26 70 3 Gain Variation over Temperature Noise Figure [1] Input Return Loss Output Return Loss Output Power for 1 dB Compression [1] Saturated Output Power (Psat) [1] Output Third Order Intercept (IP3) Supply Current (Idd) (Vdd = 3V, Vgg = Vgg1 = Vgg2 = Vgg3 = -0.3V Typ.) [1] Board loss subtracted out for gain, power and noise figure measurement [2] Adjust Vgg = between -1 to 0.3V to achieve Idd = 70mA dB dB dB dBm dBm dBm mA 8 - 360 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC752LC4 v00.0409 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 24 - 28 GHz Gain vs. Temperature 30 Gain vs. Idd 30 8 LOW NOISE AMPLIFIERS - SMT 8 - 361 26 26 GAIN (dB) 22 +25 C +85 C -40 C GAIN (dB) 22 18 18 70 mA 55 mA 14 14 10 20 22 24 26 28 30 FREQUENCY (GHz) 10 20 22 24 26 28 30 FREQUENCY (GHz) Input Return Loss vs. Temperature 0 Output Return Loss vs. Temperature 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 +25 C +85 C -40 C -5 RETURN LOSS (dB) -10 -15 +25 C +85 C -40 C -20 -25 20 22 24 26 28 30 FREQUENCY (GHz) 20 22 24 26 28 30 FREQUENCY (GHz) Noise Figure vs. Temperature 6 5 NOISE FIGURE (dB) 4 3 2 1 0 20 22 24 26 28 30 FREQUENCY (GHz) +25 C +85 C -40 C Noise Figure vs. Idd 6 5 NOISE FIGURE (dB) 4 3 2 1 0 20 22 24 26 28 30 FREQUENCY (GHz) 70 mA 55 mA F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC752LC4 v00.0409 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 24 - 28 GHz 8 LOW NOISE AMPLIFIERS - SMT Output IP3 vs. Temperature 32 30 28 IP3 (dBm) 26 24 22 20 18 20 22 24 26 28 30 FREQUENCY (GHz) +25 C +85 C -40 C Output IP3 vs. Idd 32 30 28 IP3 (dBm) 26 24 22 20 18 20 22 24 26 28 30 FREQUENCY (GHz) 70 mA 55 mA P1dB vs. Temperature 18 16 14 12 10 8 6 20 22 24 26 28 30 FREQUENCY (GHz) +25 C +85 C -40 C P1dB vs. Idd 18 16 14 12 10 8 6 20 22 24 26 28 30 FREQUENCY (GHz) 70 mA 55 mA P1dB (dBm) Psat vs. Temperature 20 18 16 14 12 10 8 20 22 24 26 28 30 FREQUENCY (GHz) +25 C +85 C -40 C Reverse Isolation vs. Temperature 0 -10 ISOLATION (dB) -20 -30 -40 -50 -60 -70 20 22 24 26 28 30 FREQUENCY (GHz) +25 C +85 C -40 C Psat (dBm) 8 - 362 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com P1dB (dBm) HMC752LC4 v00.0409 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 24 - 28 GHz Gain, Noise Figure & P1dB vs. Supply Voltage @ 28 GHz 28 24 GAIN (dB), P1dB (dBm) 20 16 12 8 4 0 -20 -15 -10 -5 2.5 3 Vdd (V) INPUT POWER (dBm) Noise Figure Gain P1dB Power Compression @ 28 GHz 30 Pout (dBm), GAIN (dB), PAE (%) 25 20 15 10 5 0 -25 Pout Gain PAE 8 7 6 5 4 3 2 1 0 3.5 NOISE FIGURE (dB) Absolute Maximum Ratings Drain Bias Voltage RF Input Power Gate Bias Voltage Channel Temperature Continuous Pdiss (T = 85 °C) (derate 6.7 mW/°C above 85 °C) Thermal Resistance (Channel to ground paddle) Storage Temperature Operating Temperature +4.5V -5 dBm -1 to 0.3V 175 °C 0.21 W 148 °C/W -65 to +150 °C -40 to +85 °C ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing NOTES: 1. PACKAGE BODY MATERIAL: ALUMINA. 2. LEAD AND GROUND PADDLE PLATING: GOLD FLASH OVER NICKEL. 3. DIMENSIONS ARE IN INCHES (MILLIMETERS). 4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE. 5. PACKAGE WARP SHALL NOT EXCEED 0.05MM DATUM – C – 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 8 - 363 LOW NOISE AMPLIFIERS - SMT HMC752LC4 v00.0409 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 24 - 28 GHz 8 LOW NOISE AMPLIFIERS - SMT Pin Descriptions Pin Number 1, 2, 4, 6, 7, 12, 13, 15, 17 - 19, 24 3 5, 11, 14, 22, 23 Function GND Description Package bottom has exposed metal paddle that must be connected to RF/DC ground. This pad is AC coupled and matched to 50 Ohms. No Connection. This pin may be connected to RF/DC ground. Performance will not be affected. Interface Schematic RFIN N/C 8 - 10 Vgg1 - 3 Gate control for amplifier. Please follow “MMIC Amplifier Biasing Procedure” application note. See assembly for required external components. 16 RFOUT This pad is AC coupled and matched to 50 Ohms. 21, 20 Vdd1, Vdd2 Power Supply Voltage for the amplifier. See assembly for required external components. Application Circuit Component C1 - C5 C6 - C10 C11 - C15 Value 100 pF 1,000 pF 4.7 μF 8 - 364 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC752LC4 v00.0409 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 24 - 28 GHz Evaluation PCB 8 LOW NOISE AMPLIFIERS - SMT List of Material for Evaluation PCB 123794 [1] Item J1, J2 J3 - J9 C1 - C5 C6 - C10 C11 - C15 U1 PCB [2] Description 2.92mm PCB mount K-Connector DC Pin 100pF Capacitor, 0402 Pkg. 1,000pF Capacitor, 0603 Pkg. 4.7 μF Capacitor, Tantalum HMC752LC4 Amplifier 123792 Evaluation PCB [2] [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 or Arlon 25FR The circuit board used in this application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 8 - 365