HMC797

HMC797 v02.1011 GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, DC - 22 GHz Features high p1dB output power: +28 dBm high psat output power: +31 dBm high Gain: 14.5 dB high output ip3: +40 dBm supply Voltage: +10 V @ 400 mA 50 ohm matched input/output Die size: 2.89 x 1.55 x 0.1 mm Typical Applications The hmC797 is ideal for: • Test instrumentation • microwave radio & VsAT • military & space • Telecom infrastructure 3 Amplifiers - lineAr & power - Chip • fiber optics Functional Diagram General Description The hmC797 is a GaAs mmiC phemT Distributed power Amplifier die which operates between DC and 22 Ghz. The amplifier provides 14.5 dB of gain, 40 dBm output ip3 and +28 dBm of output power at 1 dB gain compression while requiring 400mA from a +10V supply. This versatile pA exhibits a positive gain slope from 3 to 21 Ghz making it ideal for ew, eCm, radar and test equipment applications. The hmC797 amplifier i/os are internally matched to 50 ohms facilitating integration into mutli-Chipmodules (mCms). All data is taken with the chip connected via two 0.025mm (1 mil) wire bonds of minimal length 0.31 mm (12 mils). Electrical Specifications, TA = +25° C, Vdd = +10V, Vgg2 = +3.5V, Idd = 400 mA* parameter frequency range Gain Gain flatness Gain Variation over Temperature input return loss output return loss output power for 1 dB Compression (p1dB) saturated output power (psat) output Third order intercept (ip3) noise figure supply Current (idd) (Vdd= 10V, Vgg1= -0.8V Typ.) 27 min. Typ. DC - 10 13.5 ±0.5 0.009 16 16 28.5 31 41 3.5 400 27 max. min. Typ. 10 - 18 14.5 ±0.7 0.01 17 18 28.5 31 40 3 400 26.5 max. min. Typ. 18 - 22 15.5 ±0.4 0.012 18 17 28 31 39 3.5 400 max. Units Ghz dB dB dB/ °C dB dB dBm dBm dBm dB mA * Adjust Vgg1 between -2 to 0V to achieve Idd = 400 mA typical. 3-1 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC797 v02.1011 GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, DC - 22 GHz Gain vs. Temperature 18 16 Gain & Return Loss 20 10 RESPONSE (dB) S21 S11 S22 14 GAIN (dB) 12 10 0 3 +25C +85C -55C -10 -20 8 6 0 5 10 15 20 25 30 0 4 8 12 -30 FREQUENCY (GHz) 16 20 24 FREQUENCY (GHz) Input Return Loss vs. Temperature 0 Output Return Loss vs. Temperature 0 +25C +85C -55C RETURN LOSS (dB) -20 RETURN LOSS (dB) -10 -10 -20 -30 +25C +85C -55C -30 -40 0 4 8 12 16 20 24 FREQUENCY (GHz) -40 0 4 8 12 16 20 24 FREQUENCY (GHz) Reverse Isolation vs. Temperature 0 -10 -20 ISOLATION (dB) -30 -40 -50 -60 -70 -80 0 4 8 12 16 20 24 FREQUENCY (GHz) +25C +85C -55C Noise Figure vs. Frequency 7 6 NOISE FIGURE (dB) 5 4 3 2 1 0 0 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz) For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 3-2 Amplifiers - lineAr & power - Chip HMC797 v02.1011 GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, DC - 22 GHz Psat vs. Temperature 34 32 30 28 26 24 22 +25C +85C -55C P1dB vs. Temperature 34 32 P1dB (dBm) 28 26 24 22 0 4 8 12 16 20 24 FREQUENCY (GHz) Amplifiers - lineAr & power - Chip Psat (dBm) 3 30 +25C +85C -55C 0 4 8 12 16 20 24 FREQUENCY (GHz) P1dB vs. Vdd 34 32 30 28 26 24 22 0 4 8 12 16 20 24 FREQUENCY (GHz) +10V +11V Psat vs. Vdd 34 32 30 28 26 24 22 0 4 8 12 16 20 24 FREQUENCY (GHz) +10V +11V P1dB (dBm) Output IP3 vs. Temperature @ Pout = 18 dBm Tone 50 Output IP3 vs. Output Power @ 10 GHz 50 300 mA 350 mA 400 mA 45 P1dB (dBm) IP3 (dBm) +25C +85C -55C 45 IP3 (dBm) 40 40 35 35 30 30 25 0 4 8 12 16 20 24 FREQUENCY (GHz) 25 10 12 14 16 18 20 22 24 OUTPUT POWER (dBm) 3-3 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC797 v02.1011 GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, DC - 22 GHz Power Compression @ 10 GHz 32 Pout (dBm), GAIN (dB), PAE (%) 28 24 20 16 12 8 4 0 Pout Gain PAE Power Compression @ 2 GHz 32 Pout (dBm), GAIN (dB), PAE (%) 28 24 20 16 12 8 4 0 0 3 6 9 12 15 18 21 INPUT POWER (dBm) Pout Gain PAE 3 9 12 15 18 21 0 3 6 INPUT POWER (dBm) Power Compression @ 22 GHz 32 Pout (dBm), GAIN (dB), PAE (%) 28 24 20 16 12 8 4 0 0 3 6 9 12 15 18 INPUT POWER (dBm) Pout Gain PAE Power Dissipation 6 5 4 3 2 1 0 0 4 8 12 16 20 INPUT POWER (dBm) Max Pdis @ 85C 2 GHz 20 GHz Second Harmonics vs. Temperature @ Pout = 18 dBm 70 SECOND HARMONIC (dBc) 60 50 40 30 20 10 0 0 4 8 12 16 20 24 FREQUENCY(GHz) +25C +85C -55C Second Harmonics vs. Vdd @ Pout = 18 dBm 70 SECOND HARMONIC (dBc) 60 50 40 30 20 10 0 0 4 8 12 16 20 24 FREQUENCY(GHz) +8V +10V +11V For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 3-4 Amplifiers - lineAr & power - Chip POWER DISSIPATION (W) HMC797 v02.1011 GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, DC - 22 GHz Second Harmonics vs. Pout 70 SECOND HARMONIC (dBc) 60 50 40 30 20 10 0 +12 dBm +14 dBm +16 dBm +18 dBm +20 dBm +22 dBm +24 dBm Second Harmonics vs. Idd @ Pout = 18 dBm 70 SECOND HARMONIC (dBc) 60 50 40 30 20 10 0 0 4 8 12 16 20 24 FREQUENCY(GHz) 300 mA 350 mA 400 mA 3 Amplifiers - lineAr & power - Chip 0 4 8 12 16 20 24 FREQUENCY(GHz) Absolute Maximum Ratings Drain Bias Voltage (Vdd) Gate Bias Voltage (Vgg1) Gate Bias Voltage (Vgg2) rf input power (rfin) Channel Temperature Continuous pdiss (T= 85 °C) (derate 69 mw/°C above 85 °C) Thermal resistance (channel to die bottom) output power into Vswr >7:1 storage Temperature operating Temperature +12 Vdc -3 to 0 Vdc Vgg2 = (Vdd -6.5V) to 4.5V. for Vdd 2V +27 dBm 150 °C 4.5 w 14.5 °C/w 29 dBm -65 to 150°C -55 to 85 °C Typical Supply Current vs. Vdd Vdd (V) +9 +10 +11 idd (mA) 400 400 400 eleCTrosTATiC sensiTiVe DeViCe oBserVe hAnDlinG preCAUTions 3-5 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC797 v02.1011 GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, DC - 22 GHz Outline Drawing 3 Amplifiers - lineAr & power - Chip 3-6 This die utilizes fragile air bridges. Any pick-up tools used must not contact the die in the cross hatched area. Die Packaging Information standard wp-19 (waffle pack) [1] noTes: 1. All Dimensions Are in inChes [mm] 2. Die ThiCKness is .004” 3. TYpiCAl BonD pAD is .004” sQUAre 4. BonD pAD meTAliZATion: GolD 5. BACKsiDe meTAliZATion: GolD 6. BACKsiDe meTAl is GroUnD 7. no ConneCTion reQUireD for UnlABeleD BonD pADs 8. oVerAll Die siZe ±.002” Alternate [2] [1] Refer to the “Packaging Information” section on our website for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC797 v02.1011 GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, DC - 22 GHz Pad Descriptions pad number function Description This pad is DC coupled and matched to 50 ohms. Blocking capacitor is required. interface schematic 3 Amplifiers - lineAr & power - Chip 1 rfin 2 VGG2 Gate control 2 for amplifier. Attach bypass capacitors per application circuit herein. for nominal operation +3.5V should be applied to Vgg2. low frequency termination. Attach bypass capacitors per application circuit herein. low frequency termination. Attach bypass capacitors per application circuit herein. rf output for amplifier. Connect DC bias (Vdd) network to provide drain current (idd). see application circuit herein. 4, 7 3 5 ACG2, ACG4 ACG1 rfoUT & VDD 6 ACG3 low frequency termination. Attach bypass capacitor per application circuit herein. 8 VGG1 Gate control 1 for amplifier. Attach bypass capacitor per application circuit herein. please follow “mmiC Amplifier Biasing procedure” application note. Die bottom must be connected to rf/DC ground. Die Bottom GnD 3-7 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC797 v02.1011 GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, DC - 22 GHz Assembly Diagram 3 Amplifiers - lineAr & power - Chip 3-8 Application Circuit NOTE 1: Drain Bias (Vdd) must be applied through a broadband bias tee with low series resistance and capable of providing 500mA For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC797 v02.1011 GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, DC - 22 GHz Mounting & Bonding Techniques for Millimeterwave GaAs MMICs The die should be attached directly to the ground plane eutectically or with conductive epoxy (see hmC general handling, mounting, Bonding note). 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) 3 Amplifiers - lineAr & power - Chip 50 ohm microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing rf to and from the chip (figure 1). if 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. one way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (figure 2). microstrip substrates should be placed as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). RF Ground Plane 0.127mm (0.005”) Thick Alumina Thin Film Substrate Figure 1. Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either waffle or Gel based esD protective containers, and then sealed in an esD protective bag for shipment. once the sealed esD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: handle the chips in a clean environment. Do noT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: strikes. follow esD precautions to protect against esD 0.150mm (0.005”) Thick Moly Tab 0.254mm (0.010”) Thick Alumina Thin Film Substrate Figure 2. 0.102mm (0.004”) Thick GaAs MMIC 0.076mm (0.003”) Wire Bond RF Ground Plane Transients: suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pickup. General Handling: handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting The chip is back-metallized and can be die mounted with Ausn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature of 265 °C. when hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. Do noT expose the chip to a temperature greater than 320 °C for more than 20 seconds. no more than 3 seconds of scrubbing should be required for attachment. epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding rf bonds made with two 1 mil wires are recommended. These bonds should be thermosonically bonded with a force of 40-60 grams. DC bonds of 0.001” (0.025 mm) diameter, thermosonically bonded, are recommended. Ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made with a nominal stage temperature of 150 °C. A minimum amount of ultrasonic energy should be applied to achieve reliable bonds. All bonds should be as short as possible, less than 12 mils (0.31 mm). 3-9 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC797 v02.1011 GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, DC - 22 GHz Notes: 3 Amplifiers - lineAr & power - Chip For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 3 - 10