HMC907
v00.0310
GaAs PHEMT MMIC POWER AMPLIFIER, 0.2 - 22 GHz
Features
high p1dB output power: +27 dBm high Gain: 14 dB high output ip3: +38 dBm single supply: +10V @ 350 mA 50 ohm matched input/output Die size: 2.91 x 1.33 x 0.1 mm
Typical Applications
The hmC907 is ideal for: • Test instrumentation • microwave radio & VsAT • military & space • Telecom infrastructure
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Amplifiers - lineAr & power - Chip
• fiber optics
Functional Diagram
General Description
The hmC907 is a GaAs mmiC phemT Distributed power Amplifier die which operates between 0.2 and 22 Ghz. This self-biased power amplifier provides 14 dB of gain, 38 dBm output ip3 and +27 dBm of output power at 1 dB gain compression while requiring only 350mA from a +10V supply. Gain flatness is excellent at ±0.6 dB from DC to 12 Ghz making the hmC907 ideal for ew, eCm, radar and test equipment applications. The hmC907 amplifier i/os are internally matched to 50 ohms facilitating integration into mutli-Chip-modules (mCms). All data is taken with the chip connected via two 0.025mm (1 mil) wire bonds of minimal 0.31 mm (12 mils) length.
Electrical Specifications, TA = +25 °C, Vdd = +10V, Idd = 350mA
parameter frequency range Gain Gain flatness Gain Variation over Temperature input return loss output return loss output power for 1 dB Compression (p1dB) saturated output power (psat) output Third order intercept (ip3) noise figure supply Current (idd) (Vdd= 10V) 23 12 min. Typ. 0.2 - 8 13.5 ±0.6 0.008 15 15 26 28.5 37 3.5 350 25 12 max. min. Typ. 8 - 16 13.5 ±0.5 0.008 15 20 27 29.5 38 2.5 350 23 12.5 max. min. Typ. 16 - 22 14 ±0.3 0.009 15 15 25.5 28.5 37 3.0 350 max. Units Ghz dB dB dB/ °C dB dB dBm dBm dBm dB mA
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For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC907
v00.0310
GaAs PHEMT MMIC POWER AMPLIFIER, 0.2 - 22 GHz
Gain vs. Temperature
16
Gain & Return Loss
30 20 RESPONSE (dB) 10
14
GAIN (dB)
0 -10 -20 -30 -40 0 5 10 15
S21 S11 S22
12
+25C +85C -55C
3
0 4 8 12 16 20 24
10
8
6 20 25 30 FREQUENCY (GHz)
FREQUENCY (GHz)
Input Return Loss vs. Temperature
0
Output Return Loss vs. Temperature
0
+25C +85C -55C
RETURN LOSS (dB)
-20
RETURN LOSS (dB)
-10
-10
-20
-30
+25C +85C -55C
-30
-40 0 4 8 12 16 20 24 FREQUENCY (GHz)
-40 0 4 8 12 16 20 24 FREQUENCY (GHz)
Reverse Isolation vs. Temperature
0 -10
Noise Figure vs. Frequency
7 6 NOISE FIGURE (dB)
ISOLATION (dB)
-20 -30 -40 -50 -60 0 4 8
+25C +85C -55C
5 4 3 2 1 0
12
16
20
24
0
2
4
6
8
10
12
14
16
18
20
22
FREQUENCY (GHz)
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com
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Amplifiers - lineAr & power - Chip
HMC907
v00.0310
GaAs PHEMT MMIC POWER AMPLIFIER, 0.2 - 22 GHz
Psat vs. Temperature
32
P1dB vs. Frequency
32 30
+25C +85C -55C
30 28 26 24 22 20
+25C +85C -55C
P1dB (dBm)
26 24 22 20 0 4 8 12 16 20 24 FREQUENCY (GHz)
Amplifiers - lineAr & power - Chip
Psat (dBm)
3
28
0
4
8
12
16
20
24
FREQUENCY (GHz)
Output IP3 vs. Temperature @ Pout = 16 dBm Tone
50
+25C +85C -55C
Output IP3 vs. Output Power @ 12 GHz
50
9V 10V 11V
45
45
IP3 (dBm)
35
IP3 (dBm) 0 4 8 12 16 20 24
40
40
35
30
30
25 FREQUENCY (GHz)
25 10 12 14 16 18 20 22 24 OUTPUT POWER (dBm)
Gain, Power & Output IP3 vs. Supply Voltage @ 12 GHz
Gain (dB), P1dB (dBm), Psat (dBm), IP3 (dBm) 45 40 35 30 25 20 15 10 9 9.5 10 Vdd (V) 10.5 11
Gain P1dB Psat IP3
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For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC907
v00.0310
GaAs PHEMT MMIC POWER AMPLIFIER, 0.2 - 22 GHz
Power Compression @ 12 GHz
32 Pout (dBm), GAIN (dB), PAE (%) 28 24 20 16 12 8 4 0
Pout Gain PAE
Power Compression @ 2 GHz
32 Pout (dBm), GAIN (dB), PAE (%) 28 24 20 16 12 8 4 0 0 4 8 12 16 20 INPUT POWER (dBm)
Pout Gain PAE
3
8 12 16 20
0
4
INPUT POWER (dBm)
Power Compression @ 20 GHz
32 Pout (dBm), GAIN (dB), PAE (%) 28 24 20 16 12 8 4 0 0 4 8 12 16 20 INPUT POWER (dBm)
Pout Gain PAE
Power Dissipation
6 5 4 3 2 1 0 0 4 8 12 16 20 INPUT POWER (dBm)
Max Pdis @ 85C 2GHz 20GHz
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com
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Amplifiers - lineAr & power - Chip
POWER DISSIPATION (W)
HMC907
v00.0310
GaAs PHEMT MMIC POWER AMPLIFIER, 0.2 - 22 GHz
Typical Supply Current vs. Vdd
Vdd (V) +9 +10 +11 idd (mA) 350 350 350
Absolute Maximum Ratings
Drain Bias Voltage (Vdd) rf input power (rfin)(Vdd = +11V) +11 Vdc +20 dBm 150 °C 4.1 w 15.8 °C/w -65 to 150°C -55 to 85 °C
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Amplifiers - lineAr & power - Chip
Channel Temperature Continuous pdiss (T= 85 °C) (derate 63 mw/°C above 85 °C) Thermal resistance (channel to die bottom) storage Temperature operating Temperature
eleCTrosTATiC sensiTiVe DeViCe oBserVe hAnDlinG preCAUTions
Outline Drawing
This die utilizes fragile air bridges. Any pick-up tools used must not contact the die in the cross hatched area.
Die Packaging Information
standard wp-9 (waffle pack)
[1]
noTes: 1. All Dimensions in inChes [millimeTers] 2. Die ThiCKness is 0.004 (0.100) 3. TYpiCAl BonD pAD is 0.004 (0.100) sQUAre 4. BonD pAD meTAliZATion: GolD 5. BACKsiDe meTAlliZATion: GolD 6. BACKsiDe meTAl is GroUnD 7. no ConneCTion reQUireD for UnlABeleD BonD pADs 8. oVerAll Die siZe is ±.002
Alternate [2]
[1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation.
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For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC907
v00.0310
GaAs PHEMT MMIC POWER AMPLIFIER, 0.2 - 22 GHz
Pad Descriptions
pad number function Description This pad is DC coupled and matched to 50 ohms. Blocking capacitor is required. interface schematic
1
rfin
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Amplifiers - lineAr & power - Chip
3-6
2
oUT & Vdd
rf output for amplifier. Connect DC bias (Vdd) network to provide drain current (idd). see application circuit herein.
Die Bottom
GnD
Die bottom must be connected to rf/DC ground.
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC907
v00.0310
GaAs PHEMT MMIC POWER AMPLIFIER, 0.2 - 22 GHz
Assembly Diagram
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Amplifiers - lineAr & power - Chip
Application Circuit
NOTE 1: Drain Bias (Vdd) must be applied through a broadband bias tee with low series resistance and capable of providing 500mA
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For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC907
v00.0310
GaAs PHEMT MMIC POWER AMPLIFIER, 0.2 - 22 GHz
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with conductive epoxy (see hmC general handling, mounting, Bonding note). 50 ohm microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing rf to and from the chip (figure 1). if 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. one way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (figure 2). microstrip substrates should be placed as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils).
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond 0.076mm (0.003”)
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Amplifiers - lineAr & power - Chip
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RF Ground Plane
0.127mm (0.005”) Thick Alumina Thin Film Substrate Figure 1.
Handling Precautions
Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either waffle or Gel based esD protective containers, and then sealed in an esD protective bag for shipment. once the sealed esD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: handle the chips in a clean environment. Do noT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: strikes. follow esD precautions to protect against esD
0.150mm (0.005”) Thick Moly Tab 0.254mm (0.010”) Thick Alumina Thin Film Substrate Figure 2.
0.102mm (0.004”) Thick GaAs MMIC
0.076mm (0.003”) Wire Bond
RF Ground Plane
Transients: suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pickup.
General Handling: handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers.
Mounting
The chip is back-metallized and can be die mounted with Ausn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature of 265 °C. when hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. Do noT expose the chip to a temperature greater than 320 °C for more than 20 seconds. no more than 3 seconds of scrubbing should be required for attachment. epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
rf bonds made with two 1 mil wires are recommended. These bonds should be thermosonically bonded with a force of 40-60 grams. DC bonds of 0.001” (0.025 mm) diameter, thermosonically bonded, are recommended. Ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made with a nominal stage temperature of 150 °C. A minimum amount of ultrasonic energy should be applied to achieve reliable bonds. All bonds should be as short as possible, less than 12 mils (0.31 mm).
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com