PD- 91836A
IRG4CC50WB
IRG4CC50WB IGBT Die in Wafer Form
C
600 V Size 5
WARP Speed
G E
6" Wafer
Electrical Characteristics ( Wafer Form )
Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage Colletor-to-Emitter Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Collector Current Gate-to-Emitter Leakage Current Guaranteed (Min/Max) 2.3V Max. 600V Min. 3.0V Min., 6.0V Max. 250 µA Max. ± 1.1 µA Max. Test Conditions IC = 10A, TJ = 25°C, VGE = 15V TJ = 25°C, ICES = 250µA, V GE = 0V VGE = VCE , TJ =25°C, IC =250µA TJ = 25°C, VCE = 600V TJ = 25°C, VGE = +/- 20V
Mechanical Data
Nominal Backmetal Composition, Thickness: Nominal Front Metal Composition, Thickness: Dimensions: Wafer Diameter: Wafer thickness: Relevant Die Mechanical Dwg. Number Minimum Street Width Reject Ink Dot Size Ink Dot Location Recommended Storage Environment: Recommended Die Attach Conditions Reference Standard IR packaged part ( for design ) : IRG4PC50W Cr-NiV-Ag ( 1kA-2kA-.2.5kA ) 99% Al, 1% Si (4 microns) 0.257" x 0.260" 150mm, with std. < 100 > flat .015" + / -.003" 01-5226 100 Microns 0.25mm Diameter Minimum Consistent throughout same wafer lot Store in original container, in dessicated nitrogen, with no contamination For optimum electrical results, die attach temperature should not exceed 300C
Die Outline
www.irf.com
01/19/01
很抱歉,暂时无法提供与“IRG4CC50WB”相匹配的价格&库存,您可以联系我们找货
免费人工找货